... Techn. 125 No. 1-3 (2000) 35-39 . 106. ... N. E. Sluchanko, V. V. Glushkov, S. V. Demishev, M. V. Kondrin, T. V. Ischenko, W. Gust, V. V. Brazhkin, B. B. Straumal, Y ...
6. http://www.issp.ac.ru/libm/2000.htm
... N. Vershinin , R. Dimitriou , M. Benmalek , B. Straumal , W. Gust, J. Vivas , J ... E. Sluchanko , V. V. Glushkov , S. V. Demishev , M. V. Kondrin , T. V. Ischenko , W ... A. Sanchez Bolinches , C. Ferrer Gimenez , M. Friesel , B. B. Straumal , N. F ...
7. Shovkun D.V. - Publications
... M.R. Trunin, A.A. Zhukov, Yu.A. Nefyodov, N. Bontemps, H. Enriquez, A. Buzdin, M ... M.R.Trunin, Yu.A.Nefyodov, D.V.Shovkun, A.A.Zhukov, N.Bontemps, H.Enriquez, A.Buzdin ...
8. Shovkun D.V. - Publications
... M.R. Trunin, A.A. Zhukov, Yu.A. Nefyodov, N. Bontemps, H. Enriquez, A. Buzdin, M ... M.R.Trunin, Yu.A.Nefyodov, D.V.Shovkun, A.A.Zhukov, N.Bontemps, H.Enriquez, A.Buzdin ...
9. http://www.issp.ac.ru/lnep/pdf/kukushkin2000c.pdf
... To this end, we studied several low-density [ns 0.2 1.5 3 1011 cm22 ] and high-quality [electron mobility m 0.9 4 3 106 cm2 Vs] GaAs Alx Ga12x As single heterojunctions with a d -doped layer of Be acceptors nA 2 3 109 cm22 ) located 30 nm from the © 2000 ...