Äîêóìåíò âçÿò èç êýøà ïîèñêîâîé ìàøèíû. Àäðåñ îðèãèíàëüíîãî äîêóìåíòà : http://www.phys.msu.ru/upload/iblock/985/2012-00-00-semisalova%20%20.pdf Äàòà èçìåíåíèÿ: Mon May 21 16:47:05 2012 Äàòà èíäåêñèðîâàíèÿ: Tue Oct 2 08:11:33 2012 Êîäèðîâêà:

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, : 1. , MnAs. 2. , , , ( 0.1 - 5·1016 -2), . 3. Si1-xMnx x = 0.35 - 0.55, , 380 , , . 4. ZnO, ZnO:Co, MOCVD ( ), , , , . ZnO:Co, , , , . ZnO (.. d0 - ), . 5. GaN:Cr 400 , ~ 100 ~ 25 , . InMnAs , , 13 26%,

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2010, 2011); MISM (, 2008, 2011); - « » -XXI (, 2009); «International Conference on Magnetism» ICM-2009 (, , 2009); «IV Euro-Asian Symposium "Trends in MAGnetism" EASTMAG-2010» (, 2010); - , (, 2011); 45- (, , 2011); - « » (« 2011») (, 2011); XIX (, 2012); XVI « » ( , 2012). 22 , , 6 , , 16 . ,

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, , , , . , , , , , . , , . , , , , . InMnAs InMnAs, GaAs (100) InAs Mn . ­ YMn = 0.13, 0.20 0.26. 130 , 220 270 , . , . . 1 Mn Y .
Mn

= 0.13 300 ,

± 16 , 80 300 ,

7


[10 * ]

[10 * ]

3

80 InMnAs, YMn=0.13 40 T = 300 K

100 T = 80 K 50 InMnAs, YMn=0.13

-6

3

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T = 300 K 0

0

-40

-50

-80 -16000

-8000

0

8000

16000

-100 -3000

-1500

0

1500

3000

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. 1. InMnAs YMn = 0.13: ) ±16 300 . ) ±3 300 80 .

MS, . HS 2.5 , 80 .
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1000

HC Mn, , , , ­ 470±50 300 770±50 80 (. 2).

300 80

800

600

400

200

0,15

0,20

0,25

YMn

. 2. InMnAs Mn 80 300 .

320 - 330 . , InMnAs . , , , . MnAs.
8


, , InMnAs , ­ (TC ~ 318 K). , , . ZnO:Co, ZnO ZnO:Co ZnO, (MOCVD). Al2O3 (r- (1-102) c- (0001)), MgAl2O4 (111) . MOCVD ­ (- ) MOCVD, . , MOCVD ZnO:Co ZnO(CoO). ZnO:Co ­ ( .). ZnO:Co , ­ MOCVD, , . , (, - MOCVD), , . ZnO:Co ­ .
9


ZnO:Co, , (, MOCVD ( , )) . , , . ZnO . ZnO, . , ZnO, - MOCVD r- c- 600 °, , - , 80 . , , , , . , 300 °, «», (. 3). ­ 10â100 .

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( )

500 °



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, 500 °, ("whiskers") (. 3). , , , . ZnO, 300 ° 500 ° r- , . 4. , 300 , , ~ (27±5)â10-6 ·3 (0.87±0.16 ·3/). ­ , 300â10-6 ·3, 7 ·3/, 100 .

[10 * ]

40 20 0 -20 -40

T = 300 K

[10 * ]

400

3

3

T = 295 K
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. 4. M(H) 300 ZnO, r- ) 300 °C ) 500 °C.

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11


( - MOCVD), . 60â10-6 ·
3



20â10-6 ·3 , 500 °C 600 °C, . , ­ 50 200 , . ZnO MgAl2O
4

, ­ «», 30° . 15 ­ 20 «-». , ZnO MgAl2O . Si, Mn n- p- 0.005 10 ·. Si 55Mn+ 195 , 1·1015 5·1016 -2. . , , , , . - , . , , , , , . , , , , . , 850 ° , 5 1000 °
12
4






, «» , . Si1-xMnx, Si1-xMnx. 40-80 Mn ( = 0.35-0.6) () (x 0.35) (x = 0.44-0.6). . . 5 35% ( 210-4 ). 0.3 µB/Mn = 200 0.08 µB/Mn = 300 . , , 300 . , Mn TC 50 . , ,
[]
250 MS 200 150 100 50 0 HC 80 60 40 20 0 100



SinMnm 44% (, 0.012 µB/Mn Mn4Si7 [7]. Mn 0.5 ­ 0.55

50

100

150

200

250

300

[K]

,

. 5. Si1-xMnx (x 0.35) 80 GaAs .

. . 6 ( ) 0.5 - 0.52. 1.4 µB/Mn.

13

[* ]

3


[10 * ]

400 200 0 -200 -400 -16000 -8000 0 8000 16000

[]

80 130 175 250 300 325 350

K K K K K K K

250 200 150

400

300

200 100 50 0 50 100 150 200 250 300 350 100

0

[]

[K]

. 6. () SiMn 0.5 ­ 0.52.

55% 400 , SiMn . M(T) , . 0.74 µB . , [8], MnSi, , . SiMn -. . GaN:Cr , 52Cr+. 190 , ­ 6â1016 -2. 80 400 K. . 7 .
14

[10 * ]

3

-6

-6

3


60â10-6 ·3, 120 5 .
[10 * ]
120


T=80 K

3

80 40 0 -40 -80 -120 -10000


T=300 K

. . 8

-6

800 °C 5
-5000 0 5000 10000



, . 100

[]

. 7. , , 80 300 .

3 , , . , ( ) . .
[10 * ]







, ,
150 100

-6

25 . , GaN , [9]. Cr 1.1 µ . ­

3


50 0 -50 -100 -150 -16000



-8000

0

8000

16000

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. 8. GaN:Cr ­ .



15


. 9.
3,0 2,5 , *10 (E=1.69 ) (H=800 )
-3

90 80 70 60

[10 * ]

-6

3

, *10

2,0
[10 * ]
3

1,5 1,0 0,5 0,0

80 60 40 20 10 0 200 30 0 400 500

50 40
460 K

. 9. GaN:Cr. ­ GaN:Cr , .

-3

-6

30 20 10 300 400 0

[K ]

100

200

[]

, . , , . , ­ 460 K. 2.1 ,
, *10
25 20 15
-4
: 57 68
O
O







-

10 5 0 -5 -10 -15 0,5 1,0 1,5 2,0 2,5

: 58O 68O

GaN Cr.

3,0

3,5

4,0

E ()
. 10. GaN:Cr .

(. 10). ,

. , , .
, , GaN , ( , , ) , . , .
16


1. InAs, Si, ZnO GaN 16 80 ­ 400 . 2. , InMnAs 0.13 0.26, GaAs (100), , MnAs (TC ~ 318 ) InAs. 3. ZnO:Co ZnO, MOCVD

, , ZnO:Co , . , ( , ) ZnO, . 4. p n-, . , , . 5. Si1-xMn
x



x = 0.35 - 0.55, . , . , , , . 6. , , ,

GaN, .
17


,
1. Yu. Danilov, Yu. Drozdov, A. Kudrin, O. Vikhorova, B. Zvonkov, M. Sapozhnikov, L. Fetisov, A. Semisalova and N. Perov. Room-temperature ferromagnetic behaviour of InMnAs films grown by laser ablation technique// Journal of Physics: Conference Series 200, 6 (2010) art. 062025 (4 pages). .. , .. , .. , .. , .. . : // . 3 (2011) . 4-12.

2.

3.

B.A. Aronzon, V.V. Rylkov, S.N. Nikolaev, V.V. Tugushev, S. Caprara, V.V. Podolskii, V.P. Lesnikov, A. Lashkul, R. Laiho, R.R. Gareev, N.S. Perov and A.S. Semisalova. Roomtemperature ferromagnetism and anomalous Hall effect in Si1-xMnx (x 0,35) alloys// Physical Review B 84, 7 (2011) art. 075209 (10 pages). .. , .. , .. , .. , .. , .. , .. , .. , .. , .. . GaN:Cr ­ // 17, 1 (2011) 8. .. , .. , .. , .. , .. , .. , .. , .. , .. , .. . GaN:Cr// 54, 2 (2012) . 267-270; A.F. Orlov, L.A. Balagurov, I.V. Kulemanov, N.S. Perov, E.A. Gan'shina, A.S. Semisalova, A.D. Rubacheva, V.I. Zinenko, Yu.A. Agafonov, V.V. Saraikin. Magnetic and magnetooptical properties of ferromagnetic semiconductor GaN:Cr// Physics of the Solid State 54, 2 (2012), p. 283-286. L.I. Burova, N.S. Perov, A.S. Semisalova, V.A. Kulbachinskii, V.G. Kytin, V.V. Roddatis, A.L. Vasiliev, A.R. Kaul. Effect of the nanostructure on room temperature ferromagnetism and resistivity of undoped ZnO thin films grown by chemical vapor deposition// Thin Solid Films 520, 14 (2012) p. 4580-4585. .. , .. , .. , .. , .. , .. , .. , .. , .. , .. , .. , .. , .. , .. , .. . Si1-xMnx , // , .

4.

5.

6.

7.


8. .., .., .., .., .., .., .. // XXI « » (28 ­ 3 2009 ., ) .453-454. .., .., .., .., .., .., .., .., .. // - « 18

9.


» (« 2011») (11 2011 ., ) .94-95. 10. .., .., .., .., .., .., .., .., .., .., .., .., .., .. Si1-xMnx (x 0.5), // XVI « » (12-16 2012 ., ) .154-155.


11. Danilov Yu.A., Kudrin A.V., Vikhrova O.V., Zvonkov B.N., Sapozhnikov M.V., Perov N.S., Semisalova A.S., Nicolodi S., Carmo M.C., Sobolev N.A. Room-temperature ferromagnetism in InMnAs by pulse laser ablation// Book of Abstracts of Moscow International Magnetism MISM-2008 (20-25 June 2008, Moscow, Russia) p. 597. Drozdov Yu.N., Zhiteytsev E.R., layers, deposited Symposium on

12.

Danilov Yu., Drozdov Yu., Kudrin A., Vikhrova O., Zvonkov B., Sapozhnikov M., Fetisov L., Semisalova A., Perov N. Room-temperature ferromagnetic behaviour of InMnAs films grown by laser ablation technique// Book of Abstracts of International Conference on Magnetism ICM-2009 (26-31 July 2009, Karlsruhe, Germany) p.359. Orlov A.F., Balagurov L.A., Kulemanov I.V., Parkhomenko Yu.N., Granovsky A.B, Perov N.S., Ganshina E.A., Semisalova A.S., Bublik V.T., Shcherbachev K.D., Kartavykh A.V., Vdovin V.I., Sapelkin A., Rogalev A., Smekhova A. Above room temperature ferromagnetism in Mn-implanted Si : structural, electrical and magnetic properties// Book of Abstracts of International Conference on Magnetism ICM-2009 (26-31 July 2009, Karlsruhe, Germany) p.357. Orlov A.F., Kulemanov I.V., Markov A.V., Perov N.S., Gan'shina E.A., Semisalova A.S., Rubacheva A.D., Agafonov Yu.A., Zinenko V.I., Saraikin V.V. Magnetic and magnetooptical properties of a ferromagnetic semiconductor GaN:Cr// Book of Abstracts of IV Euro-Asian Symposium "Trends in Magnetism" EASTMAG 2010 (28 June - 2 July 2010, Ekaterinburg, Russia) p. 230. .., .., .., .., .., .., .. , .. , .. , .. GaN:Cr// XLV , (14-19 2011 ., , -) . 126. .., .. GaN:Cr// XVII , « 2010», (13 2010 ., ) .286-287. .., .. // XVIII , « 2011», (12 2011 ., ) . 18-19. .. // XV , « 2008», (10 2011 ., ) . 26. 19

13.

14.

15.

16.

17.

18.


19.

Orlov A.F., Balagurov L.A., Granovsky A.B., Perov N.S., Semisalova A.S., Agafonov Yu.A., Zinenko V.I., Bublik V.T., Scherbachev K.D., Vdovin V.I., Kartavych A.V., Saraikin V.V., Andreev B.A., Sapelkin A., Rogalev A., Smekhova A. Origin of ferromagnetism in Mn(Co)-implanted Si: Impurities or defects?// Book of Abstracts of Moscow International Symposium on Magnetism MISM-2008 (20-25 June 2008, Moscow, Russia) p. 193. Rocheva V.V., Rylkov V.V., Nikolaev S.N., Khaydukov E.V., Khramova O.D., Perov N.S., Semisalova A.S., Aronzon B.A., Novodvorsky O.A., Panchenko V.Ya. The properties of Si1-xMnx films produced by the pulsed laser deposition method with droplet velocity separation technique// Book of Abstracts of Moscow International Symposium on Magnetism MISM-2011 (21-25 August 2011, Moscow, Russia) p. 714. Kapelnitsky S.V., Drovosekov A.B., Semisalova A.S., Chuev M.A., Lomov A.A., Perov N.S., Lesnikov V.P., Podolskii V.V. FMR study of magnetic anisotropy of high-TC MnSi films// Book of Abstracts of Moscow International Symposium on Magnetism MISM2011 (21-25 August 2011, Moscow, Russia) p. 725. Semisalova A.S., Rylkov V.V., Aronzon B.A., Vasiliev A.L., Nikolaev S.N., Roddatis V.V., Granovsky A.B., Gan'shina E.A., Perov N.S., Lesnikov V.P., Podolskii V.V. Anomalous and planar Hall effects in ferromagnetic films Si1­xMnx (x 0.35)// Book of Abstracts of Moscow International Symposium on Magnetism MISM-2011 (21-25 August 2011, Moscow, Russia) p. 727. .., .., .., .., ., .., .., .., .., .., .., .., .. Si1-xMnx x 0.5// XIX (20-25 2012 ., ) . 213.

20.

21.

22.

23.


[1] Zutic I., Fabian J., Sarma S.D. Spintronics: Fundamentals and applications// Reviews of Modern Physics.­ 2004.­V.76.­N.2.­P.323-410. [2] Semiconductor Spintronics and Quantum Computation/ Edited by Awschalom D.D., Loss D., Samarth N.// NanoScience and Technology Series. Springer. 2002 (316 pages). [3] Koehl W.F., Wong M.H., Poblenz C., Swenson B., Mishra U.K., Speck J.S., Awschalom D.D. Current-induced spin polarization in gallium nitride// Applied Physics Letters.­2009.­V.95.­art.072110 (3 pages). [4] Ueda K., Tabata H., Kawai T. Magnetic and electric properties of transition-metal-doped ZnO films// Applied Physics Letters.­2001.­V.79.­N.7.­P.988-990. [5] Chambers S.A. Ferromagnetism in doped thin-film oxide and nitride semiconductors and dielectrics// Surface Science Reports.­2006.­V.61.­P.345-381. [6] Dietl T., Ohno H. Engineering magnetism in semiconductors// Materials Today.­2006.­V.9.­N.11.­P.18-26. [7] Sulpice A., Gottlieb U.., Affronte M., Laborde O. Magnetic and electronic properties of Mn4Si7// Journal of Magnetism and Magnetic Materials.­2004.­V.272-276.­P.519-520. [8] Men'shov V.N., Tugushev V.V., Caprara S., Chulkov E.V. High-temperature ferromagnetism in Si:Mn alloys// Physical Review B ­ Condensed Matter and Materials Physics.­2011.­V.83.­N.3.­art.035201 (13 pages). [9] Hashimoto M., Zhou Y.K., Kanamura M., Katayama-Yoshida H., Asahi H. MBE growth and properties of GaCrN// Journal of Crystal Growth.­2003.­V.251.­N.1-4.­P.327-330.

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