Alexander Mikhailovich Gaskov

INORGANIC CHEMISTRY DIVISION
LABORATORY OF PHYSICS AND CHEMISTRY OF SEMICONDUCTORS

SPECIAL COURSE: GROWTH OF SINGLE CRYSTALS AND THIN FILMS OF INORGANIC COMPOUNDS
SPECIAL COURSE: SURFACE ANALYSIS METHODS

OCCUPATION: Professor. Graduated from the Chemistry Department of Moscow State University (1966); Ph.D. (1969); Dr.Sci.; Professor (1986).

RESEARCH ACTIVITIES AND INTERESTS: inorganic chemistry, phase diagrams, crystal and film growth, surface analysis.

PHONE: (095) 939-5471

SELECTED PUBLICATIONS:

V.P. Zlomanov, V.N. Demin and A.M. Gaskov.

Predominant defects in semiconductor isovalent solid solutions A4B6. J. of Materials Chemistry 1, 31 (1992).

M.P. Belyansky and A.M. Gaskov.

Interdiffusion in PbSe/PbTe heterostructure. Le vide. Les coucher minces, Suppl. N 259, p. 92 (1991).

B.A. Akimov, A.M. Gaskov, V.N. Glonty, I.I. Ivanchik, F.N. Putilin and L.I. Ryabova.

The laser deposited PbTe(Ga) films. Phys.Stat.Sol.(a) 142, 85 (1994).

V.B. Bobruiko, G.G. Glavin, A.M. Gaskov and G.N. Maso.

Layer-by-layer analysis of A4B6 thin-film heterostructures using inductively coupled plasma atomic fluorescence spectrometry (ICP-AFS). Fresenius J.Anal.Chem. 349, 424 (1994).