Ministry of Education and Science of Russian Federation,

Russian Academy of Science,

M.V.Lomonosov Moscow State University Department of Physics,

Ioffe Physico -Technical Institute of the Russian Academy of Science

 

5-th All-Russian Conference

"Nitrides of gallium, indium and aluminum: structures and devices "

 

M.V.Lomonosov Moscow State University Department of Physics

Moscow, January, 31st - February, 2nd, 2007

 

Research, development and industrial production of semiconductor structures and devices on the base of gallium nitride and its alloys have been increasing by a record pace for the last years. Effective light-emitting diodes have been produced; injection lasers and powerful high-frequency transistors are created. The perspective of replacement of incandescent and luminescent lamps with light-emitting diode light sources based on gallium nitride was shaped out. The national programs initiating solid-state lighting, with the view for 5-10-20 years are created in the leading industrially developed countries. The new lighting industry based on solid-state light sources will be achieved to 2020 turnover exceeding 40 billion dollars per annum throughout the whole world. Dozens of international and regional conferences and symposia regarding this problem are held annually.

Four All-Russian Conferences "Nitrides of Gallium, Indium and Aluminum: structures and devices" took place in Russia during 2001-2005 (in Moscow and St.-Petersburg). The conferences enjoyed the support from RFBR and the Ministry of Industry and Science. Over 160 participants attended the Conference of 2005, representing reports on behalf of 60 institutes and companies: A.F.Ioffe Physical and Technical Institute of Russian Academy of Science, M.V.Lomonosov Moscow State University, Semiconductor Physics Institute of Siberian Department of Russian Academy of Science, Rare Earth Metal Institute, Moscow Institute of Steel and Alloys etc. Sponsors of Conference 2005 were the Russian Fund of Basic Researches, companies "ACOL Technologies, «Svetlana - Optoelectronika», “Aixtron”, “TDI”.

The conferences have shown that Russia’s interest to research and develop of semiconductor nitrides of III group metals (GaN, AlN, InN and their alloys) has drastically increased during last years. There have been conducted works on technology of crystals growing, heterostructures and p-n-heterojunctions creating, on research of physical properties of these materials and devices, on development of the systems with these devices. Devices and systems of the energy saving illumination based on light-emitting diode technologies have been developed. A number of organizations acquired the up-to-date process equipment and launched the industrial production of light-emitting diodes and lighting devices on their basis. Apart from Moscow and S.-Petersburg institutes and companies, some organizations and enterprises from Siberia, the Urals and the Volga region also joined the work in this direction. Research and development programs have been created on the subject aimed for the long period with participation of industrial, academic, and high-school institutions.

 

CONFERENCE TERMS AND FORMAT:

January 2007 in Moscow, at the Department of Physics of M.V.Lomonosov Moscow State University, is scheduled for carrying out the

5-th All-Russian Conference

"Nitrides of Gallium, Indium and Aluminum: structures and devices".

 

Grounding on the experience from previous Meetings and Conferences and also considering the participants circle expansion, the organizing committee plans carrying out the Conference for three days - from January, 31st - to February, 2nd, 2007.

The conference will consist of oral and poster sessions.

Each oral session will be anticipated by the invited presentations. Each participant will be provided with a certain time for an oral report or a stand for a poster. The Conference Official language is Russian. Part of reports (from foreign participants) can be made in English. An exhibition of industrial companies will be organized at the Conference.

 

 

CONFERENCE PROGRAM

1. Substrates for epitaxial growth of nitrides.

2. Technology of materials: growth of bulk crystals.

3. Technology of materials: epitaxial growth.

4. Optical, electrical and structural properties of materials.

5. Properties of quantum-size nitride-based structures.

6. Designs and technologies (growing and post-growing) of nitride-based devices.

7. Electronic and photoelectric nitride-based devices.

8. Nitride-based light-emitting diodes and lasers.

9. Special session “Energy saving illumination based on light-emitting diode technologies”.

 

 

ABSRACTS

The extended abstracts, preferably in Russian but acceptable in English (on two pages as indicated in the attached form) and brief abstracts in English (100 words as indicated in the attached form) are to be sent up to December 1^st, 2006 to the e-mail address:

 Nitrides2007@mail.ioffe.ru.

 

The abstracts will be published prior to the conference.

 

PARTICIPANTS FINANCIAL SUPPORT:

The Organizing Committee applied to the Ministry of Education and Sciences, RFBR and sponsors  with a request to provide a financial support.

 

PRELIMINARY REGISTRATION:

The Organizing Committee kindly asks to complete and send the Preliminary Registration Form by e-mail to one of the addresses: andrey.turkin@acol.biz or Nitrides2007@mail.ioffe.ru.

ABSTRACTS FORMAT:

          The extended abstracts in Russian must be made as following:

          • Electronic version in Microsoft Word 6.0 – XP version

          • Publishing material volume – 2 pages

          • Page size (A4) 17x24 cm², all margins 2.4 cm. Font – Times New Roman 10, 1 interval. Printing will be made without scaling.

          • Title, authors, companies and addresses should be centered, the main text – aligned. • Title to be made with capital letters and marked bold. 

          • Authors – bold italic.

          • Presenting author – underlined. • The corresponding author (e-mail) – marked with *.

          • Next (from a new line) – a company name, postal and e-mail address – with a regular font.

          • If the paper is presented by several companies, authors in a general list are to be indexed beginning from the top (1, 2, …), companies names and addresses are to be under each other and each one – from a new line.

          • Space between the paper title and authors list and between the company (ies) address (es) and the main text.

          • Formula presence – if possible, using Latin and Symbol typing; centered. At least, Equation Editor may be applied. 

          • Citations are to be made according to the Journal Physics and Technics of Semiconductors (“Semiconductors”). Applying automatic citations and footers is forbidden.

          • Drawings – in black and white, inserted to the “doc”-file from the enclosed files.

          • The recommended drawing width - half (6 cm) or full page size. Optimum is inserting figures in pairs into the table (2 columns) in the beginning or the end of a page with drawing names in the same table. Otherwise, while inserting of a separate drawing, its name should be in the initial graphic file containing the drawing itself.

          Using the table as a means of "flowing" the basic drawing text - is inadmissible.

          • No page numbers.

           

Brief abstract in English (title, authors, company name, 100 text words) are to be placed on a separate page. 

DEADLINE FOR ABSTRACTS SENDING – December 01, 2006!

 

 

Preliminary registration form

(SEPARATELY FOR EACH OF THE EXPECTED PARTICIPANTS)

1.      Full name.

2.      Company.

3.      Title.

4.      Academic title, ranks.

5.      Quantity of expected reports (to be represented by you).

6.      Reports subjects, presented by the given participant (according to the numeration given in the Conference Program).

7.      Necessity of financial support.

8.      Necessity of accommodation reservation in the hotel.

9.      Tel, E-mail.

DEADLINE FOR FORM PROVIDING – November 01, 2006.
ORGANISING COMMITEE

 

 

P.K.Kashkarov             M.V.Lomonosov MSU, chairman

A.E.Yunovich              M.V.Lomonosov MSU, co-chairman

P.S.Kop’ev                   A.F.Ioffe PhTI RAS, co-chairman

A.N.Turkin                   M.V.Lomonosov MSU, scientific secretary

W.V.Lundin                 A.F.Ioffe PhTI RAS, scientific secretary

 

A.A.Arendarenko        Elma-Malakhit Ltd.

V.N.Danilin                 Pulsar

P.V.Ivannikov             M.V.Lomonosov MSU

A.F.Ivanov                   RFNC – RSRITP, Snezhinsk

A.Yu.Ignatov               Monocrystal Ltd.

G.V.Itkinson                Svetlana-Optoelectronics

A.N.Kovalev                MISIS

V.G.Mokerov                IUHFSE RAS

A.Ye.Nikolaev              A.F.Ioffe PhTI RAS

M.A.Ormont                 M.V.Lomonosov MSU

V.G.Sidorov                 S-PbSPU

P.A.Forsh                      M.V.Lomonosov MSU

M.V.Chukichev            M.V.Lomonosov MSU

V.I.Shashkin                 IFM RAS, N.-Novgorod

 

 

PROGRAM COMMITTEE

 

A.E.Yunovich              M.V.Lomonosov MSU, chairman

P.S.Kop’ev                   A.F.Ioffe PhTI, co-chairman

A.V.Sakharov              A.F.Ioffe PhTI, secretary

 

L.M.Kogan                   «Optel Center»

W.V.Lundin                 A.F.Ioffe FTI

Yu.N.Makarov              Nitride Crystals Ltd.

F.I.Manyakhin              MISIS

M.G.Milvidsky             GIREDMET

O.P.Pchelyakov             IFP SO RAS

V.G.Sidorov                  S-PbSPU

S.Yu.Shapoval              IPTM RAS