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Lotkhov S.V.

Ñîàâòîðû: Çîðèí À.Á., Êðóïåíèí Â.À., Ïðåñíîâ Ä.Å., Niemeyer J., Scherer H., Weimann T., Ahlers F.J., Wolf H., Zangerle H., Rinderer L., Àðóòþíîâ Ê.Þ., Pavolotski A.B., Pekola J.P. ïîêàçàòü ïîëíîñòüþ..., Bogoslovsky S.A., O-P S., Pashkin Y.A., Kemppinen A., Âûøåíñêèé Ñ.Â., Balashov D.V., Piquemal F., Maibaum F., Manninen A.J., Mackrodt B., Devoille L., Dolata R., Feltin N., G-D W., Jalali-Jafari B., F-Im B., Kafanov S., G?tz M., Khabipov M., K?nemann J., Tolkacheva E.M., šRudakov V., Àìèòîíîâ Ñ.Â.

34 ñòàòüè, 1 äîêëàä íà êîíôåðåíöèè, 8 òåçèñîâ äîêëàäîâ

Êîëè÷åñòâî öèòèðîâàíèé ñòàòåé â æóðíàëàõ ïî äàííûì Scopus: 431, Web of Science: 506

IstinaResearcherID (IRID): 543880

Äåÿòåëüíîñòü ñòèëü:  îáû÷íûé | ÃÎÑÒ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

• Ñòàòüè â æóðíàëàõ

  • • 2016 Detection of on-chip generated weak microwave radiation using superconducting normal-metal SET
    • Jalali-Jafari B., Lotkhov S.V., Zorin A.B.
    • â æóðíàëå Applied Sciences, EISSN 2076-3417, Published by MDPI AG, Basel, Switzerland, òîì 6, ? 2, ñ. 35-1-35-15 DOI
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    • 2012 A hybrid superconductor-normal metal electron trap as a photon detector
    • Lotkhov S.V., Zorin A.B.
    • â æóðíàëå Applied Physics Letters, èçäàòåëüñòâî American Institute of Physics (United States), òîì 100, ? 24, ñ. 242601-1-242601-3 DOI
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    • 2012 Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment
    • Lotkhov S.V., Zorin A.B.
    • â æóðíàëå Journal of Physics: Conference Series, èçäàòåëüñòâî Institute of Physics (United Kingdom), òîì 400, ñ. 042040-042040 DOI
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    • 2011 Long hold times in a two-junction electron trap
    • Kemppinen A., Lotkhov S.V., O-P Saira, Zorin A.B., Pekola J.P., Manninen A.J.
    • â æóðíàëå Applied Physics Letters, èçäàòåëüñòâî American Institute of Physics (United States), òîì 99, ñ. 142106-142106 DOI
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    • 2011 Single-charge escape processes through a hybrid turnstile in a dissipative environment
    • Lotkhov S.V., O-P Saira, Pekola J.P., Zorin A.B.
    • â æóðíàëå New Journal of Physics, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 13, ñ. 013040-013040 DOI
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    • 2011 Towards the observation of phase-locked Bloch oscillations in arrays of small Josephson junctions
    • Maibaum F., Lotkhov S.V., Zorin A.B.
    • â æóðíàëå Physical Review B - Condensed Matter and Materials Physics, èçäàòåëüñòâî American Institute of Physics (United States), òîì 84, ñ. 174514-174514 DOI
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    • 2009 Pumping properties of the hybrid single-electron transistor in dissipative environment
    • Lotkhov S.V., Kemppinen A., Kafanov S., Pekola J.P., Zorin A.B.
    • â æóðíàëå Applied Physics Letters, èçäàòåëüñòâî American Institute of Physics (United States), òîì 95, ? 11, ñ. 112507-112507 DOI
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    • 2007 Cooper pair transport in a resistor-biased Josephson junction array
    • Lotkhov S.V., Krupenin V.A., Zorin A.B.
    • â æóðíàëå IEEE Transactions on Instrumentation and Measurement, èçäàòåëüñòâî Institute of Electrical and Electronics Engineers (United States), òîì 56, ? 2, ñ. 491-494 DOI
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    • 2006 Ground-state characterization of Nb charge-phase Josephson qubits
    • Zangerle H., K?nemann J., Mackrodt B., Dolata R., Lotkhov S.V., Bogoslovsky S.A., G?tz M., Zorin A.B.
    • â æóðíàëå Physical Review B - Condensed Matter and Materials Physics, èçäàòåëüñòâî American Institute of Physics (United States), òîì 73, ? 22, ñ. 224527-1-224527-8 DOI
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    • 2006 Low hysteretic behavior of Al/AlOx/Al Josephson junctions
    • Lotkhov S.V., Tolkacheva E.M., Balashov D.V., Khabipov M.I., F-I Buchholz, Zorin A.B.
    • â æóðíàëå Applied Physics Letters, èçäàòåëüñòâî American Institute of Physics (United States), òîì 89, ? 13, ñ. 132115-132115 DOI
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    • 2005 Steps towards a capacitance standard based on single-electron counting at PTB
    • Scherer H., Lotkhov S.V., G-D Willenberg, Zorin A.B.
    • â æóðíàëå IEEE Transactions on Instrumentation and Measurement, èçäàòåëüñòâî Institute of Electrical and Electronics Engineers (United States), òîì 54, ñ. 666-669
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    • 2003 Cooper pair cotunneling in single charge transistors with dissipative electromagnetic environment
    • Lotkhov S.V., Bogoslovsky S.A., Zorin A.B., Niemeyer J.
    • â æóðíàëå Physical Review Letters, èçäàòåëüñòâî American Physical Society (United States), òîì 91, ? 19, ñ. 197002-1-197002-4 DOI
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    • 2003 Progress in measurements of electron pump by means of a CCC
    • Feltin N., Devoille L., Piquemal F., Lotkhov S.V., Zorin A.B.
    • â æóðíàëå IEEE Transactions on Instrumentation and Measurement, èçäàòåëüñòâî Institute of Electrical and Electronics Engineers (United States), òîì 52, ? 4, ñ. 599-603
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    • 2001 Operation of a three-junction single-electron pump with on-chip resistors
    • Lotkhov S.V., Bogoslovsky S.A., Zorin A.B., Niemeyer J.
    • â æóðíàëå Applied Physics Letters, èçäàòåëüñòâî American Institute of Physics (United States), òîì 78, ? 7, ñ. 946-948 DOI
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    • 2000 Coulomb blockade and cotunneling in single electron circuits with on-chip resistors: Towards the implementation of R-pump
    • Zorin A.B., Zangerle H., Lotkhov S.V., Niemeyer J.
    • â æóðíàëå Journal of Applied Physics, èçäàòåëüñòâî American Institute of Physics (United States), òîì 88, ? 5, ñ. 2665-2670 DOI
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    • 2000 Fewer-junction single-electron trap with an ohmic resistor
    • Lotkhov S.V., Zorin A.B., Zangerle H., Niemeyer J.
    • â æóðíàëå Physica B, òîì 280, ñ. 403-404
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    • 1999 A Superconducting Electrometer Based on the Resitively Shunted Bloch Transistor
    • Lotkhov S.V., Zangerle H., Zorin A.B., Weimann Th, Scherer H., Niemeyer J.
    • â æóðíàëå IEEE Transactions on Applied Superconductivity, èçäàòåëüñòâî Institute of Electrical and Electronics Engineers (United States), òîì 9, ñ. 3664-3667
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    • 1999 Charging and heating effects in a system of coupled single-electron devices
    • Krupenin V.A., Lotkhov S.V., Scherer H., Zorin A.B., Weimann Th, Ahlers F.J., Niemeyer J., Wolf H.
    • â æóðíàëå Physical Review B - Condensed Matter and Materials Physics, èçäàòåëüñòâî American Institute of Physics (United States), òîì 59, ? 16, ñ. 10778-10784
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    • 1999 Highly sensitive electrometers based on single Cooper pair tunneling
    • Zorin A.B., Lotkhov S.V., Pashkin Yu A., Zangerle H., Krupenin V.A., Weimann Th, Scherer H., Niemeyer J.
    • â æóðíàëå Journal of Superconductivity (Plenum), òîì 12, ? 6, ñ. 747-755
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    • 1999 Resistive-state anomaly in superconducting nanostructures
    • Arutyunov K.Y., Presnov D.A., Lotkhov S.V., Pavolotski A.B., Rinderer L.
    • â æóðíàëå Physical Review B - Condensed Matter and Materials Physics, èçäàòåëüñòâî American Institute of Physics (United States), òîì 59, ? 9, ñ. 6487-6498 DOI
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    • 1999 Storage capabilities of a four-junction single-electron trap with an on-chip resistor
    • Lotkhov S.V., Zangerle H., Zorin A.B., Niemeyer J.
    • â æóðíàëå Applied Physics Letters, èçäàòåëüñòâî American Institute of Physics (United States), òîì 75, ? 17, ñ. 2665-2667
  • • 1997 An experimental study of charge effects in ultrasmall tunnel junctions
    • Krupenin V.A., Lotkhov S.V., Pashkin Y.A., Presnov D.E.
    • â æóðíàëå Physics Uspekhi, èçäàòåëüñòâî Russian Academy of Sciences (Russian Federation), òîì 40, ? 5, ñ. 542-544 DOI
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    • 1997 Instability of single-electron memory at low temperatures in Al/AlOx/Al structures
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • â æóðíàëå Journal of Experimental and Theoretical Physics, èçäàòåëüñòâî Maik Nauka/Interperiodica Publishing (Russian Federation), òîì 84, ? 1, ñ. 190-196 DOI
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    • 1997 Investigation of the offset charge noise in single electron tunneling devices
    • Wolf H., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Zorin A.B., Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • â æóðíàëå IEEE Transactions on Instrumentation and Measurement, èçäàòåëüñòâî Institute of Electrical and Electronics Engineers (United States), òîì 46, ? 2, ñ. 303-306 DOI
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    • 1997 Resistive state anomalies of superconducting nanostructures
    • Arutyunov K.Y., Krupenin V.A., Lotkhov S.V., Pavolotski A.B., Rinderer L.
    • â æóðíàëå Superlattices and Microstructures, èçäàòåëüñòâî Academic Press (United States), òîì 21, ? A, ñ. 27-30
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    • 1996 Background charge noise in metallic single-electron tunneling devices
    • Zorin A.B., Ahlers F.J., Niemeyer Th Weimann J, Wolf H., Krupenin V.A., Lotkhov S.V.
    • â æóðíàëå Physical Review B - Condensed Matter and Materials Physics, èçäàòåëüñòâî American Institute of Physics (United States), òîì 53, ? 20, ñ. 13682-13687 DOI
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    • 1996 Charge state instabilities in the single-electron trap
    • Krupenin V.A., Lotkhov S.V., Presnov D.E., Zorin A.B., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Wolf H.
    • â æóðíàëå Czechoslovak Journal of Physics, èçäàòåëüñòâî Kluwer Academic/Plenum Publishers (United States), òîì 46, ? 4, ñ. 2283-2284 DOI
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    • 1996 Detection of the single electron tunneling noise using Coulomb blockade electrometer
    • Zorin A.B., Krupenin V.A., Lotkhov S.V., Niemeyer J., Presnov D.E., Scherer H., Wolf H., Ahlers F.J., Weimann T.
    • â æóðíàëå Czechoslovak Journal of Physics, èçäàòåëüñòâî Kluwer Academic/Plenum Publishers (United States), òîì 46, ? 4, ñ. 2281-2282 DOI
  • • 1996 On the reprodicibility of Resistive State Anomalies in Superconducting Nanostructures
    • Arutyunov K.Yu, Lotkhov S.V., Pavolotski A.B., Presnov D.E., Rinderer L.
    • â æóðíàëå Helvetica Chimica Acta, èçäàòåëüñòâî Verlag Helvetica Chimica Acta (Switzerland), òîì 69, ? 2, ñ. 31-32
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    • 1996 Resistive state measurements of quasi-0-dimensional superconducting structures
    • Arutyunov K.Y., Krupenin V.A., Lotkhov S.V., Pavolotski A.N., Rinderer L.
    • â æóðíàëå Czechoslovak Journal of Physics, èçäàòåëüñòâî Kluwer Academic/Plenum Publishers (United States), òîì 46, ? 4, ñ. 2309-2310 DOI
  • • 1996 Single-electron structures of supersmall Al/AlOx/Al tunnelling junctions: manufacturing techniques and experimental results
    • Presnov D.E., Krupenin V.A., Lotkhov S.V.
    • â æóðíàëå Physics Uspekhi, èçäàòåëüñòâî Russian Academy of Sciences (Russian Federation), òîì 39, ? 8, ñ. 847-848 DOI
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    • 1993 Photo and electron-beam lithography sharing common stencil
    • Krupenin V.A., Lotkhov S.V., Vishenski S.V.
    • â æóðíàëå Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, èçäàòåëüñòâî American Institute of Physics (United States), òîì 11, ? 6, ñ. 2132-2136

• Ñòàòüè â ñáîðíèêàõ

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    • 1996 The offset charge noise in single electron tunneling devices
    • Ahlers F.J., Krupenin V.A., Lotkhov S.V., Niemeyer J., Presnov D.E., Scherer H., Weimann T., Wolf H., Zorin A.B.
    • â ñáîðíèêå CPEM (Conference on Precision Electromagnetic Measurements) Digest. Proceedings of the 1996 Conference on Precision Electromagnetic Measurements (17-20 June 1996, Braunschweig, Germany), èçäàòåëüñòâî IEEE (Piscataway, NJ, United States), ñ. 507-508 DOI
  • • 1993 Single-charge traps bistability in complex systems of ultrasmall tunnel junctions
    • Lotkhov S., Krupenin V., Vyshenski S.
    • â ñáîðíèêå Int. Symp. "Nanostructures: physics and technology", ìåñòî èçäàíèÿ St.Petersburg, Russia, ñ. 77-77

• Äîêëàäû íà êîíôåðåíöèÿõ

  • • 2014 Noise properties of SET transistor made from highly doped SOI (Óñòíûé)
    • Àâòîðû: Presnov D.E., Amitonov S.V., Rudakov V.I., Lotkhov S.V., Zorin A.B., Krupenin V.A.
    • International Conference ?Micro- and Nanoelectronics ? 2014? (ICMNE-2014), ?Ershovo? resort, Zvenigorod, Moscow Region, Russia, Ðîññèÿ, 2014

• Òåçèñû äîêëàäîâ

  • • 2014 Noise properties of SET transistor made from highly doped SOI
    • Presnov D.E., Amitonov S.V., Rudakov V.I., Lotkhov S.V., Zorin A.B., Krupenin V.A.
    • â ñáîðíèêå Intenational Conference "Micro- and Nanoelectronics - 2014", ICMNE 2014, October 6-10, ?Ershovo? resort, Moscow - Zvenigorod, Russia, Book of Abstracts,, ìåñòî èçäàíèÿ Institute of Physics and Technology of the RAS,, òåçèñû, ñ. O1-23
  • • 1996 Background charge influence on single-electron devices: single-electron transistor and trap
    • Presnov D.E., Krupenin V.A., Lotkhov S.V.
    • â ñáîðíèêå Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology, ìåñòî èçäàíèÿ Ioffe St.Petersburg, Russia, 24-28 June, òåçèñû, ñ. 183-186
  • • 1996 Charge state instabilities in the single-electron trap
    • Krupenin V.A., Lotkhov S.V., Presnov D.E., Zorin A.B., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Wolf H.
    • â ñáîðíèêå Abstracts of the 21st International Conference on Low Temperature Physics, ìåñòî èçäàíèÿ Prague, Czech Republic, 8-14 August, òåçèñû, ñ. 308
  • • 1996 Detection of the single-electron tunneling noise using Coulomb blockade electrometer
    • Zorin A.B., Krupenin V.A., Lotkhov S.V., Niemeyer J., Presnov D.E., Scherer H., Wolf H., Ahlers F.J., Weimann T.
    • â ñáîðíèêå Abstracts of the 21st International Conference on Low Temperature Physics, ìåñòî èçäàíèÿ Prague, Czech Republic, 8-14 August, òåçèñû, ñ. 308
  • • 1996 Verification of a memory cell based on a single electron trap
    • Krupenin V.A., Lotkhov S.V., Presnov D.E., Wolf H., Ahlers F.J., Niemeyer J., Scherer H., Weimann T., Zorin A.B.
    • â ñáîðíèêå Abstracts of IX Trilateral German - Russian - Ukrainian Seminar on High-Temperature Superconductivity, ìåñòî èçäàíèÿ Gabelbach Germany, 22-25 September, òåçèñû, ñ. 22
  • • 1995 Modified nanotechnology for fabrication of complex single-electron devices
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • â ñáîðíèêå Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology, ìåñòî èçäàíèÿ Ioffe St.Petersburg, Russia, 26-30 June, òåçèñû, ñ. 354-356
  • • 1995 Noise in a Single-Electron Electrometer
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • â ñáîðíèêå VIII Trilateral German-Russian-Ukrainian Seminar on High-Temperature Superconductivity, Lviv, Ukraine, September 06?09, òåçèñû, ñ. P2-6
  • • 1995 Single-electron transistor as an electrometer for investigation of charge dynamics in structures with deep coulomb blockade
    • Krupenin V.A., Lotkhov S.V., Presnov D.E.
    • â ñáîðíèêå Abstracts of Invited Lectures and Contributed Papers of International Symposium - Nanostructures: Physics and Technology, ìåñòî èçäàíèÿ Ioffe St.Petersburg, Russia, 26-30 June, òåçèñû, ñ. 427-430