ÈÑÒÈÍÀ

Dolgopolova E.A.

Ñîàâòîðû: Çëîìàíîâ Â.Ï., Khoviv A.M., Baranchikov A.E., Òðåòüÿêîâ Þ.Ä., Èâàíîâ Â.Ê.

3 ñòàòüè

Êîëè÷åñòâî öèòèðîâàíèé ñòàòåé â æóðíàëàõ ïî äàííûì Scopus: 11, Web of Science: 12

IstinaResearcherID (IRID): 449195

Äåÿòåëüíîñòü ñòèëü:  îáû÷íûé | ÃÎÑÒ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

• Ñòàòüè â æóðíàëàõ

  • 
    • 2012 The deviation from a stoichiometry and the amphoteric behaviour of Ga in PbTe/Si films
    • Samoylov A.M., Belenko S.V., Sharov M.K., Dolgopolova E.A., Zlomanov V.P.
    • â æóðíàëå Journal of Crystal Growth, èçäàòåëüñòâî Elsevier BV (Netherlands), òîì 351, ? 1, ñ. 149-154 DOI
  • 
    • 2010 Synthesis of Nanocrystalline Solid Solutions Ce1-xRxO2-( R = Nd, Eu) by the Homogeneous Hydrolysis Method
    • Polezhaeva O.S., Ivanov V.K., Dolgopolova E.A., Baranchikov A.E., Shcherbakov A.B., Tret'yakov Yu D.
    • â æóðíàëå Doklady Chemistry, èçäàòåëüñòâî Maik Nauka/Interperiodica Publishing (Russian Federation), òîì 433, ñ. 183-185 DOI
  • 
    • 2003 Comparative study of point defects induced in PbTe thin films doped with Ga by different techniques
    • Samoylova A.M., Buchnev S.A., Khoviv A.M., Dolgopolova E.A., Zlomanov V.P.
    • â æóðíàëå Materials Science in Semiconductor Processing, èçäàòåëüñòâî Pergamon Press (United States), òîì 6, ? 5-6, ñ. 481-485 DOI