ÈÑÒÈÍÀ	Âîéòè â ñèñòåìó Ðåãèñòðàöèÿ
	Èíòåëëåêòóàëüíàÿ Ñèñòåìà Òåìàòè÷åñêîãî Èññëåäîâàíèÿ ÍÀó÷íî-òåõíè÷åñêîé èíôîðìàöèè
	Ãëàâíàÿ Ïîèñê Ñòàòèñòèêà Î ïðîåêòå Ïîìîùü

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Semiconductor Science and Technologyæóðíàë

Ñòàòüè, îïóáëèêîâàííûå â æóðíàëå ñòèëü:  îáû÷íûé | ÃÎÑÒ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

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  • 2016 TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures by uniaxial compression
  • Bogdanov E.V., Kissel H., Kolokolov K.I., Minina N.Ya
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 31, ? 3, ñ. 035008-1-035008-5 DOI
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  • 2015 Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
  • Bokov P.Yu, Brazzini T., Romero M.F., Calle F., Feneberg M., Goldhahn R.
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 30, ? 8, ñ. 085014 DOI
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  • 2012 Electron effective masses in an InGaAs quantum well with InAs and GaAs inserts
  • Kulbachinskii V.A., Yuzeeva N.A., Galiev G.B., Klimov E.A., Vasil?evskii I.S., Khabibullin R.A., Ponomarev D.S.
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 27, ñ. 035021-1-035021-5
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  • 2012 Galvanomagnetic properties and electronic structure of Pb1-x-ySnxVyTe under pressure
  • Skipetrov E.P., Golovanov A.N., Kovalev B.B., Knotko A.V., Slyn'ko E.I., Slyn'ko V.E.
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 27, ? 1, ñ. 015019-1-015019-9 DOI
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  • 2012 Monopolar photoelectromagnetic effect in Pb1-xSnxTe(In) under terahertz laser radiation
  • Chernichkin V.I., Ryabova L.I., Nicorici A.V., Khokhlov D.R.
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 27, ? 3, ñ. 035011 DOI
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  • 2009 Photoconductivity of oxidized nanostructured PbTe(In) films
  • Dobrovolsky A.A., Dashevsky Z.M., Kasiyan V.A., Ryabova L.I., Khokhlov D.R.
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 24, ? 7, ñ. 075010 DOI
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  • 2008 Deep impurity levels in vanadium-doped Pb(1-x)Mn(x)Te solid solutions
  • Dobrovolsky A.A., Artamkin A.I., Dziawa P., Story T., Slyn'ko E.I., Slyn'ko V.E., Ryabova L.I., Khokhlov D.R.
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 23, ? 5, ñ. 055004 DOI
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  • 2007 Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
  • Kulbachinskii V.A., Vasil'evskii I.S., Lunin R.A., Galistu G., de Visser A., Galiev G.B., Shirokov S.S., Mokerov V.G.
  • â æóðíàëå Semiconductor Science and Technology, èçäàòåëüñòâî Institute of Physics Publishing (United Kingdom), òîì 22, ? 3, ñ. 222-228 DOI