. : http://danp.sinp.msu.ru/pci2015/ProgramFull_pci2015.pdf
: Tue May 12 22:18:30 2015
: Sat Apr 9 23:42:54 2016
: IBM-866
. .. - . ..

LV
( 26 28 2015)

2015


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.., .. Ar. Bochkareva E.S., Nikonorov N.V., Podsvirov O.A., Prosnikov M.A., Sidorov A.I. The formation of sodium nanoparticles in sodium-silicate glasses under the action of electron beam and thermal treatments. . ., . ., . ., . ., . ., . ., . . . .., .., .., .., .. - . ., .., .., .., .., .., .. .., .., .., .., .., .., P.P. InFeAs .

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XIII
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.. 1. .., ., .., .., .., .. - Zr-Si-N, .., .., .., .. nc-TiN/a-SiNx. ( , 20 ) Karaseov P.A., Karabeshkin K.V., Titov A.I., Ullah M.W., Kuronen A., Djurabekova F. and Nordlund K. Photoluminescence quenching and damage formation in GaN under ion-beam irradiation (15 ). .., .., .., .., .. Si, 64Zn+ (15 ). .., .., .., .. (15 ).

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XIV 5.
.., .. .., .., .. W . .., .., .., .., .., .. , . .., .., .., .. -. .., .., .. - . .., .., .. . .., .., .., .., .., .. ESR, RBS-C PIXE. .., .., .., .. . .., .., .. . .., .. . .., .., .., .. -. .., .., .., .., .. . .., .., .. . .., .., .., .., .. , .., .. -

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- . .., .., .., .., .., .. . .., .., .., .. (C, Mn, Cr, Si) , . .., .., .., .., .. . .., .., .., .. . .., .., .., .. - . .., .., ., .., .. . .., .., .., .., .., .. Nb, Ta Ag SF5+ . .., .., .., .., .. SinOm+ . .., .., .., ., .. CdTe, . .., .., .., .., .. u Si-u. .., .. . .., .. Zn ZnO Si . 130

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XVI 30.
.., .., .., .. . .., .., .., .. , + + Si(111). .., .., .., .. . .., .., .., .. , Al/Si, Al/NaSi2. .., .. TiN-Fe. .., .., .., .. Si, SiO2 . .., .., ., .. SiO2/Si.

143 144 145 146 147

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XVII

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151

152 153

3. 4.

154

1. 2.

3.

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Sajid Muhammad, Chechenin N.G., Frank Sill Torres, Khan E.U., Agha Shahrukh, Shahzeb Adeel Radiation Effects Analysis of CMOS Devices in LEO Environment. .., .., .., .., .. SiO2 . .., .., .., .., .., .. . .., .., .., .., .. - .

155

156

157

158


XVIII 5.
.., .., .., .., .., .., .. . .., .., .., .., .. . .., .., .., .., .., .. , -. Elsehly E.M.I., Chechenin N.G., Bukunov K.A., Makunin A.V., Priselkova A.B., Vorobyeva E.A., Motaweh H.A., Shemukhin A.A. RBS and EDS investigation of deposition content in CNT-based filters for liquid solutions. Mohamed S. Badawi, Mona M. Gouda, Ahmed M. ElKhatib, Mohamed A. Elzaher, Abouzeid A. Thabet, Ahmed A. Salim and Mahmoud I. Abbas. Determination of the NaI (Tl) detector efficiency using radioactive parallelepiped sources. Sahar E. Abo-Neima, Karolin Abdel-Aziz Barakat, Hassan Tourk1 Marzoga F.Ragab and Hussein A. Motaweh. Variation of hematological parameters in rats exposed to electromagnetic radiation. .., .., .., .., .. RBS EDS .., .., .., .., .., .. NV- , , .., .., .., .., .., .. , .

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XIX



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.. 1,2), .. 1), .. 1), .. 1), .. 1,2) 1) , , 2) . .. , , , , , , . .. /1/. . . , . . , . /2/, .. /3/, . /4/ . , /57/. 1. 2. 3. 4. 5. 6. 7. .. . , 1989, 309, 864. E. Teller. Preprint UCRL-JC-129547, 1997, 10 p. A.I. Akhiezer, et al. Probl. At. Sci. Tech., 2001, 6, 272. H. Sekimoto, et al. Nucl. Sci. Engin., 2001, 139, 306. S.P. Fomin, et al. Annals Nucl. Energy, 2005, 32, 1435. S.P. Fomin, et al. Progress Nucl. Energy, 2008, 50, 163. S.P. Fomin, et al. Progress Nucl. Energy, 2011, 53, 800.


4
: 50 .. , , , 50 /12/. 1. 2. .. . , 2, 1965, . 1009. ... , 2, 12, 1965, .111.


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UNIVEX 350 . /1/. . , . 1. .. // . , 2010, 3, . 12.


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- , , /1/. /2-4/ , , . , . /5/. /5/ , . - ( ) (). 1. 2. 3. 4. 5. .. . . . .: . 1987. V.M. Grichine // Radiation Physics and Chemistry 67, 2003, C. 93. V.G. Baryshevskii, I. YA. Dubovskaya // Dokl. Akad. Nauk SSSR 231, 1976, C. 1335. S. Bellucci, V. A. Maisheev // J. Phys.: Condens. Matter 18, 2006, C. 2083. E.I. Fiks, O. V. Bogdanov, Y. L. Pivovarov. Nucl. Instr. Meth. Phys. Res. B (2015) in press.


7
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c.1 : 1 Zt=6; 2 Zt=13; 3 Zt=28; 4 Zt=42; 5 Zt=79. , ( 15%). 1. 2. Belkova Yu. A. et al. // Nucl.Instr.Meth. B. 2015. V.343. P.110. Ziegler J.F. // SRIM (www.srim.org).


9

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10
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| r | 1 - . p p p p , (..), puncorr ( pn )2 pcorr ( pn )2 n n N ( pn pm )2 N ( pn ) 2 N ( pn )2 pcorr /a Ecorr 10...100 KeV /1-6/. , Ecorr : () ; , (p,n,...); .
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pn
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1. 2. 3. 4. 5. 6. .., .. , 80, 5, 23 (2010). .., .., .. ,141,276 .., .., .. ,142,627 Vysotskii V.I., Vysotskyy M.V. European Phys. Jour. A49 (2013): Vysotskii V.I., Adamenko S.V., Vysotskyy M.V. Annals Nuclear 618 (2013). .., .. , 147, 173 (2015). (2012). (2012). 99. Energy, 62,


11
- .. , .. . .. , . , . .. , . , /1/ ( ) , - . /1/, , , , , 100 . , 10 . , . , , - . 1. 2. 3. .. // . , , 1955, . 19, 6, . 651. S.V. Trofymenko, N.F. Shul'ga // Phys. Lett. A, 2013, v. 377, p. 2265. N.F. Shul'ga, S.V. Trofymenko // Phys. Lett. A, 2014, v. 378, p. 315.


12
.. 1), .. 1), .. 1), .. 1), .. 1), .. 1), .. 1), .. 2) 1) , , , 2) . .. , , , [1-3]. , , , , . , . . , , , . 1. 2. 3. S.J. Smith and E. M. Purcell, Phys. Rev.1953, 92,1069 P.M. Van den Berg, J. Opt. Soc. Am. 1974,64, 325 A.Gover, P.Dvorkis, U.Elisha, J.Opt. Soc. Am. ,1984, 1, 723


13
10 .. 1), .. 1), .. 1), .. 1), .. 1), .. 1), .. 1), .. 2) 1) , , , 2) . .. , , . 10 . , . , .


14

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.. 1) , .. 1) , .. 1), .. 2) . .. , , 2) , ,

[1]. [1]. . . 11.2034.2014/K. 1. .., .., .. . .. - // . .. . 2011. - 2. . 117-120.


15
.. 1), .. 2), .. 2), .. 3) . .. , , 2) , , 3) , ,

1)

/1, 2/ , , [110] . , , /3/. ( 3.500.2014/K ). 1. 2. 3. Feit M.D., Fleck J.A., Jr., Steiger A. // Journal of Computational Physics, 1982, v. 47, p. 412-433. Shul'ga N.F., Syshchenko V.V., Neryabova V.S. // NIM B, 2013, v. 309, p. 153-156. N.F. Shul'ga, V.V. Syshchenko, V.S. Neryabova, A.Yu. Isupov // Journal of Physics: Conference Series, 2014, v. 517, p. 012030 (1-6).


16
.. 1) ,2) , , , , ,
1)

2)

, , meff/m /1-4/. meff m . , . , . . . - . , . 1. 2. 3. 4. .. , 6- ., , , 2003, . 427. .. . , , , , , 2006, . 271. .. // , 1995, . 37, 10, . 2909. .. // , 1996, . 38, 9, . 2719.


17

1) 2) 3)

.. 1), .. 2), .. 3),.. 3) , , . , ., () . -

/1/. 855 , (111) . /2/ /3/; /2/ /4/, /1/.

1. 2. 3. 4. Mazzolari A. et al. // Phys. Rev. Lett. 2014. V. 112. P. 135503. http://wwwinfo.jinr.ru/programs/jinrlib/tropics/index.html .. // . . . 1997. 8. . 32-37. Kitagawa M., Ohtsuki Y.H. // Phys. Rev. . 1973. V.8. N 7. P. 3117-3123.


18
.. , .. . .. , , , , /1/. . , , . , /2/. , , - - /3/. , , . . 1. 2. 3. . 3., P. ., . , .: , 1979, .1, 439 . .., .. . .: , 1990. 351 . W. Sweldens // Z. Angew. Math. Mech. 1996. 76. P. 41-44.


19
.. . .. , , , 1 <111> , . , , . , , ~ 980K. 1. 2. 3. .., ( 1), "", . , 1983. .., .. // , 1983, 85, . 94. .., .., .. // , "" , . , 1989.


20
.., .. , , R Z=3-6 E=1-8 (0.25-0.7 /) , . -2 ( ). , ().

. 1. Li, Be, B. C . Li, - Be, -B, -C /1,2/, SRIM-2013. 1. 2. ..,. ., .., .. // , 1957, .32, .5, .974. ., ..// , 1967, 4, .62.


21
( ) .. , , . . () - : , .. = ; "m" "n" ; = - /1/. (- ) . , =2 2 . ( = ). 1. Kalashnikov N.P., Krokhin O.N. Quantum Electronics. 2014. v.44 (12). p.p.1109 1111. Raman scattering of a photon with frequency doubling by a channelled positron.


22
.. , .. , , , q,q2/q,q1 /1/, q , k - , q , .

c.1 d E: 1 q,q2; 2 q,q2; () /2/. , d 10% E < 0.1 /, (. 1). 1. 2. Dmitriev I.S. et al. // At. Data Nucl. Data Tables 2010. V.96. P.85. Novikov N.V., Teplova Ya.A. http://cdfe.sinp.msu.ru/services/cccs/cccs.htm


23
.. , .. , .. , .. , --, Al (001). , Al (001) .

. , .. . .


24
.. 1), .. 1), .. 2), .. 1), .. 1), .. 2), .. 2), .. 1), . . 1) , , . 2) , . ,

1)

(). , . , /1/. , , , . 2H(d,n)3He 4 , , . 1.2104 /, 1.5 . , , 1 . 1. .., .., .. . // . 2011. . 37. . 14. . 1-8.


25
Si .. , .. , .. , , -. . (220) - Mathematica , [1]. .1 = 2. , , , .

1. Bogdanov, O.V., Fiks, E.I., Korotchenko, K.B.,Pivovarov, Yu.L., Tukhfatullin, T.A., // Journal of Physics: Conference Series, 236, 012029


26
.. , .. , .. , .. , , ab initio ZrHeH , . (n, p), (n, ) . , , , . . , . , 1s- Zr , 12 . , , sH(s,p,d)Zr , . ZrHeH , Zr-. , , . ZrH , ZrH .


27
PdHx .. 1) , .. 2,3) , , Donostia International Physics Center and University of the Basque Country, San Sebastin, Spain 3) Basque Foundation for Science IKERBASQUE, Bilbao, Spain
1)

2)

PdHx . , . , /1/. PdHx , 4d /2/. , . - , , , , . 1. 2. Silkin V.M., Chernov I.P., Koroteev Y.M., Chulkov E.V., // Physical Review B, 2009, 80, 245114. Silkin V.M., Nazarov V.U., Chernov I.P., Sklyadneva I.Y., Y.M., Chulkov E.V., // J. Phys.: Condens. Matter, 2015, 27, 055501.


28

1)

.. 1) , .. 1) .., ,

. - , -- . /1/ ( ) . , , , , . . , . 1. .. , .. // . , . 2015, 4, . 53-56.


29

1)

.. 1) , .. 1) .., ,

- /1/. ( ) . , , , , . . , . , . , . 1. .. , .. // . , . 2015, 4, . 53-56.


30
.. . .. , , . 10 0.154 , . . .


31

1)

. 1), ..1) . .. , ,

, . , . , . , . . . . . LAMMPS /1/ ReaxFF /2,3/. 1. 2. 3. Plimpton S. J. // J. Comput. Phys. 1995. 1. P. 117 Strachan A., Kober E. M., van Duin A. C. T. // J. Chem. Phys. 2005. 122. P. 54502. Chenoweth K., van Duin A. C. T. and Goddard W. A, // J. Phys. Chem. A. 2008. 112. 1040.


32
ReaxFF .. . .. , , - , /1/. ReaxFF /2, 3/, , , , /4-6/, . , , , , . 1. 2. 3. 4. 5. 6. .., ..// . ., . . ., 2014, 4, . 64. Strachan A., Kober E. M., van Duin A. C. T. // J. Chem. Phys. 2005. 122. P. 54502. Chenoweth K., van Duin A. C. T. and Goddard W. A, // J. Phys. Chem. A. 2008. 112. 1040. van Duin A. C. T., Dasgupta S., Lorant F. // J. Phys. Chem. A. 2001. 105 9396. Nielson K. D., van Duin A. C. T., Oxgaard J. // Phys. Chem. A. 2005. 109. 493. Chen N., Lusk M. T., van Duin A. C. T. // Phys. Rev. B. 2005. 72. 085416.


33
. . , . , - , , . /1, 2/. - Ar+ 100 (10,10), (11,9) (17,0). 10-30 . . . , , , . , . 1. 2. Miskovi Z.L. // Radiation Effects and Defects in Solids, 2007, 162, 3-4, P. 185. .. // . : . . 44- . ., 44, , - , 2014, . 64.


34
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1)

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35
.. 1) , .. 2) , .. 2) 1) University of Antwerp, Antwerp, Belgium - , . ,

2)

. 5 10 , zigzag- armchair- . /1/, - . . 2--0-45116 . 1. D.W. Brenner, O.A. Shenderova, J.A. Harrison, S.J. Stuart, B. Ni, S.B. Sinnot, //J. Phys: Condens. Matter, 2002, 14, 783.


36
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37
, , .. 1), .. 1),2) , , . .. , ,
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, , , . , [1], . , , . , . 1. Yu.A. Chesnokov, I.V. Kirillin, W. Scandale, N.F. Shul'ga, V.I. Truten' // Phys. Lett. B, 2014, v. 731, p. 118.


38
.. 1), .. 1), .. 2), .. 2) 1) , , 2) , -, , , , , . (1,5-2 ) . (20 ) (200 ) . (10 ) , . AN-2500 165, 105. 30 , , , (Hf) HfO2 (24nm)/Si (100). , , . (1,5...3 ) HfO2 , , . 0,625. 14-08-31609\14 10.02.2014 _.


39
, .. 1), .. 1), .. 1), .. 1) - .. , .. , 2) -
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, () . .. [1]. , . - , , . AN-2500 , . . 1. . // . .1957. . 3. 8. . 152-153.


40


41

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42
.. 1),2), .. 1),2), . 1), .. 1), .. 1),2),3), .. 1),2), .. 1), .. 1) , , , 2) . .. , , 3) , ,
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43
.. , .. , --, . , . , . - .

, () .


44
.. 1), .. 1) , .. 1), .. 2), .. 2), .. 1,2) 1) , ., 2) , ., (10 11) --11. 300 Am241 17,74 .. [1-2], . , 2 . 60, . , ( ) , . . 1. 2. .., .. , .. .. . , . 26, . 8, 599 603, 1977. Mkrtchyan, A.R., Navasardyan, M.A., Gabrielyan, R.G., Kocharian, L.A. & Kuzmin, R.N. Solid State Communicaton, 59,147-149, 1986.


45
.. 1), .. 1) , .. 1) , .. 2), .. 2), .. 1),2) 1) , ., 2) , ., [1-2] , t1, ( - , t - ) , [2]. , (10 11) , --11. 35 . , . 1. 2. A.R. Mkrtchyan, M.A. Navasardyan, R.G. Gabrielyan, L.A. Kocharian, R.N. Kuzmin, Solid State Communicaton, 59,147-149. 1986 .. , .. , .. . , 8, 677 (1982).


46
Si .. 1) 2), .. 2), .. 1), .. 1) 1) , . , 2) , . , BCM-1 [1] () () 350 Si [2]. BCM-1 155 255 0.7 Si. INFN-LNF () SAGA-LS (). 1. 2. Bogdanov O.V., Fiks E.I., Korotchenko K.B., Pivovarov Yu.L., Tukhfatullin T.A., //, J. of Phys.: Conf. Ser., 2010, V.236, 1; doi:10.1088/17426596/236/1/012029. .., .., .., //, , 2014, . 12 (153), C. 9-12.


47
- .. 1), .-. 2), .. 3),4) , , 2) INFN, Sez. Roma La Sapienza, Rome, Italy 3) INFN, Laboratori Nazionali di Frascati, Frascati, Italy . . . , ,
1)

4)

. , /1/. . -, - /2/. - . -, , . , - . 100 /2/, /3/ 100 /. 1. 2. 3. .., .. // , 1990, 160, 47. .., ., .. // , 2014, 100, 642. Babaev A., Cavoto G., Dabagov S.B. // NIM B, 2015, in press, http://dx.doi.org/10.1016/j.nimb.2015.01.018.


48
- HWC Si . 1), .. 1), . 2), .. 1) , , 2) , ,

1)

, (half wave crystal - HWC) /1/. /2/ 2 . /3-4/ HWC ( ). 255 1, . , (111) (220) HWC Si 0.7 , . 1. 2. 3. 4. E.Tsyganov, A.Taratin, Nucl. Instrum. Methods Phys. Res. A (1995). Guidi V., Mazzolari A., De Salvador D. and Bacci L.// Phys. 108, 014801 Yu.L. Pivovarov and T.A. Tukhfatullin, Journ. of Phys. Conf. (2014). Y. Takabayashi et al. Nucl. Instrum. Methods Phys. Res. B doi:10.1016/j.nimb.2015.02.007). 363, 511, Rev. Lett., 2012, Ser., 517. (2015) (in Press


49
, , - .. , .. , .. , , , . - . - . , . , , . . , , , . ( 3.500.2014/K ).


50
.. , .. , .. , .. , .. , .. , . , (ILC) /1/ (Ee>>1 ) . , - , ., , /2/. /3/. /4/ , , . ILC. 1. 2. 3. 4. ILC Technical Design Report, 12 June 2013. // www.linearcollider.org/ILC/TDR. Loos H. et al. // Proc. FEL'08, Gyeongju, Korea, August 2008. THBAU01, P. 485. Gogolev A. et al. // J. Phys.: Conf. Ser. 357(2011) Kube G. et al. Proceedings of IPAC2013, 2013, p. 491. 012018.


51
"" .. 1), .. 1,2), .. 1) , , 2) , ,
1),2)

, , . . /13/. ( , . /27/), CERN NA63 /8, 9/. , ILC CLIC, . SPS CERN. 1. 2. 3. 4. 5. 6. 7. 8. 9. .. , , 1966, 50, 202. S.P. Fomin, N.F. Shul'ga, Phys. Lett., 1986, A 144, 148. A.I. Akhiezer, N.F. Shul'ga, , 1987, 151, 385. F.F. Ternovskij, JETP, 1961, 12, 123. N.F. Shul'ga, S.P. Fomin, JETP Lett., 1978, 27, 117. N.F. Shul'ga, S.P. Fomin. JETP, 1998, 86, 32. A.S. Fomin, et al., Nuovo Cimento, 2011, 34 C, 45. H.D. Thomsen, et al., Phys. Lett., 2009, B 672, 323. H.D. Thomsen, et al., Phys. Rev., 2010, D 81, 052003.


52

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.. 1), ..1), .. 1), .. 1),2) , , , 2) , ,

1 100/ . , .[1] [2], [3]. . 1. 2. J. D. Brownridge, Pyroelectric X-ray generator, Nature. 358 (1992) 287. .. , .. , .. , .. , .. . . XLIV , , 27-29 , 2014. A.S. Kubankin, R.M. Nazhmudinov, A.N. Oleinik, A.V. Shchagin, K.A. Vokhmyanina. Turning of electron beam by pyroelectric crystals, report at International conference: Charged and Neutral Particles Channeling Phenomena, Italy, Capri, October 5-10, 2014.

3.


53
.. 1), . -1), .. 1),2),3), .. 1),2), .. 1),2), . 1), . 1) 1) , , , 2) . .. , , 3) , , - , - , /1,2/. , . , , . 30-1000 , . 1. 2. A. Kubankin, N. Nasonov, V. Kaplin, S. Uglov, M. Piestrup, C. Gary // Radiation Physics and Chemistry, 2006, V. 75, P.913. .. // 2008. .34. .21. .46-51.


54
.. , . . "", , , . () : 1. ; 2. , , , . , . , , , . , , . . : 1. . . 2. , . . .


55
- .., .. 115409, , 31, kalash@mephi.ru. - 10 100 . - . . , .. . , . . , , , . , : E>me2c4/U ~ 5 10 ( me , U~20-50 , ). , , , . ( ) , . - , .


56
- .., .. 115409, 31, , .e-mail: asolchak@mephi.ru, , (, , .) ( ), d ~10-10 (., , /1/). , /2/ , - (E ~ 1011). << (2hc/E d)1/2, . -, /3/. 1. Feynman R.P., Leighton R.B., Sands M. The Feynman Lectures on Physics including Feynman's Tips on Physics: The Definitive and Extended Edition. Addison-Wesley publishers, Massachussetts, London. 1964 (2nd edition, 2005). Kalashnikov N.P., Olchak A.S. Interaction of high energy gamma-quanta with crystal surface: Classical reflection and interference phenomena.// NIM B, 2015, NIMB60846 (in press). .. , .., .., . // , 2014, .3, 5, .1-5.

2.

3.


57
.. "", , . . , . , . , . , , . , . , , . - .


58
5,7 L Al .. , .. , .. , .. , . , , 5.7 Al 9 . 5 (, ). Mo/Si , , . -6. , , Mo/Si , 2D , /1/ , Al , /2/. , Mo/Si , . . 2456 14-02-01032. 1. 2. ..// , 1969, . XLIV, .28. .., ..// , 1989, . 196, . 63.


59
.. , .. , .. , , /1/ () () ( U U 0 ch b ), . (100) . U(),
2

: , , ( ) ( ). , , . 1. ., .. . .: , 1987, 272 .


60
.. , .. , .. , , /1/ . /2/ (), . [100] [110] . (110) (100) x a ( ) ZnS 300 ( ) 1000 ( ).
U(), U(),

S

-

S

-

Zn

+

[100]

Zn+ [110]

, , . 1. 2. .., .., .. // . . XLI . . . . // .: - , 2011, . 31. .., .., .., E .. // . . XLII . . . . // .: - , 2011, . 50.


61
.. , .. , .. , .. , , , . , () . , . - . , , , , . ( 3.500.2014/K ).


62
- .. , .. , .. , .. , .. , , , , , . , () (). , - , . - , . ( 3.500.2014/K ).


63

III , , ,


64


65
.. , .. , .. . .. , . , - () . - (30% + +70% +, = 200 , j 150 /2, =60 ) V2O5, MoO3, WO3. (JSM-6610LV, "JEOL" Inca-350). - -3. , . - ( V2O5) - ( MoO3, WO3). ~ 30 /2 . V2O5 50 /2 ~ 40 . 100 /2 , . , , V2O5 ( ) .


66
, .. 1,2), . . 2), .. 3) 1) . .. , . , 2) , . , , . ,

3)

, ( ) . - (30% + +70% +, = 200 , j 150 /2, =60 ) (), () (Fe(C5H5)2) . ( 5 ) . , j ~ 100 /2 () 30-250 10 . . j 50 /2 , , , . ~ 3 . - .


67
.. 1), .. 1), .. 1), .. 1), .. 2) 1) - .. .. , , 2) .. , , , 500 ~20 . 1014 1016 2 -500 , (15)1020 2 [1]. , - . , . , 1016 2 20% . , /1/, . .

1.

. . 2 . . .. . .: , 2007, 1144.


68
.. , .. , , , , . , . , , . /1/ . . , , /2/. /3/, .

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.. , .. , .. // . , 2010, 74, 2, . 254. J.N. Brooks, D.N. Ruzic, D.B. Hayden // Fusion Engineering and Design 1997, v.37, p. 455. Philipps V. // Transactions of Fusion Science and Technology. 2004, v.45, p.237.


69
.. 1), .. 1), .. 1), .. 2), .. 3), .. 4) 1) - .. , , 2) .. , , .. , , . .. , ,

3) 4)

- /1/. (111) 1b 30 , 400 /2/. Nanometrics HL5500, 0.1 1011 /. , /3/. ~ 500 / 30 ( ) . 1. 2. Popov V.P., Safronov L.N., Naumova O.V. et al. // Nucl.Instrum.Methods in Phys.Res. B.2012. V.282. P.100. .., .., .., .., .., .., .. // . 15 . . . . , , .: ., 2014. .126. .., .., .. // . 2008. 1. .58.

3.


70
..1), ..1), ..1), ..1), ..1), .. 2), .. 2), .. 3), ..1) 1) , .- 2) - . .. , .- 3) , , .- (13,56 ) /1/ 0,7 Si 3000. 25-100 . , , . , . . , . , . . , - (1100 1200 -1). ~10 .% . . . 1. O.A. Podsvirov, P.A. Karaseov, A.Ya. Vinogradov et al. // NIMB (2010) 268 3107.


71
.. 1) , .. 1), .. 2), .. 1) 1) . , , . .. .. , ,

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. , , /1/. (, ) . . . , . 1. Yamada I. // Appl. Surf. Sci., 2014, v. 310, p. 77.


72
Si .. , .. , .. , -, (001) Si P+, PF4+ 0.6 3.2 /.. . . /1/ . , , , Si PF4 , . . , . , . 14-08-01256. 1. .. , .. , .. , .. // XLIII . .: , 2013. . 83.


73
SiGe--
1)

.. 1), T.S. vila2), P.L. Grande2), .. 1) .. , , 2) Institute of Physics, UFRGS, Porto Alegre, 9500, Brazil

SiGe . . Ge Si/SiO2. - SiGe-- . Ge+ 40-80 (1.6-2.3)1016 -2 SiO2 0.4 Si ~0.5 . Ge Si/SiO2 850-1100 20 20 . 1-21 HF . He+ c 150 . , SiGe. , SiGe , .


74
- .. 1) , .. 1), .. 1), .. 1,2), .. 2), M. Erich3), S. Petrovi3) 1) .. .. , , 2) .. , , 3) Vinca Institute of Nuclear Sciences, University of Belgrade, Belgrade, Serbia HVEE 500 , . Xe (110) 100 - 300 1014 /2 . , . , , - . . , .


75
. .. 2), .. 1), .. 3),
1)

3)

. .., . 2) . . .. . . , carbin@yandex.ru

. -- . ( S7, )) (, ) - , , , . 3-5 . 10 -4 . . ( ). Ar,N,Ti,Sn,Pb , - , 80 -100 , 2-4 . - ( ) .


76
.. 1), .. 1), .. 2), .. 2), .. 2) 1) () , , 2) - . .. , , , Si /1/. Si -3 Ag+ 30 6.251013 1.51017 /2, /1/ 2 /2. Merlin (Carl Zeiss), NordLys HKL (Oxford Instruments). , Si 6.251013 /2 Si, . Si . Si 1.51017 /2 , Si. Si - . 13-02-12012_. 1. A.L. Stepanov et al. // Optoelectronics and Advan. Mater. Rapid Comm, 2013, V. 7, 9-10, P. 692-697.


77
(TiO2), .. 1), .. 2), .. 2), .. 3), .. 1), .. 2) 1) , , 2) , , 3) , , TiO2 () 40 V+ (100)- (001)- TiO2 c 1.51017 /2. 500 750 o. () , () . , (~50 ) , . , (001)- TiO2. . , . V4+ , . , AN 2500.


78
ZnO, .. 1), .. 1), .. 1), .. 1), .. 2), .. 2), .. 1,2), A. Mackova3) 1) , , 2) , , 3) Nuclear Physics Institute of the AS CR, Rez, Czech Republic Fe+ 40 1,51017 /2 ZnO 300 900 . . (), () (). , ZnO . , - ( > 80%). . , , Fe2+,3+ "" Zn2+ ZnO. , , . , . - ( ).


79
.. , .. , .. . .. , , . , , ( ). , , , . . , , . , . , . . .. ( 14-42-03057).


80

1)

.. 1) , .. 1),2), .. 2) . .. , . , 2) . .. , . ,

() . , , ( ). , ( ), . . , . , , . ( 14-42-03062).


81
,
1)

.. 1), .. 2),3), .. 1), .. 4) . .. , . , 2) . .. , . , 3) . .. , . , 4) . .. , . ,

, , . (), , , . , . ( 1416), ( 14-42-03062) ( 15-48-03210).


82
STRAIGHT LINE APPROXIMATION .. , .. , , (), Peak Shape Analysis, Straight Line Approximation. . : . , /1/. , : e . : Qeff e eff , . , , , , /2/. . Qeff . , NIST /1/ , , , . 1. 2. Powell C.J., Jablonsky A. // J. Electron. Spectrosc. Relat. Phenom., 2010, V. 178179, P. 331. Trzhaskovskaya M., Nefedov V., Yarzhemsky Y. // At. Data Nucl. Data Tables. 2001. V. 77 (1). P. 97.


83
.. , .. , , , , . /1-2/ /1-2/. , , /3/. , /3/, , . , , . /1/. , , . Backward Differential Formula (BDF) /4/. , , : , . 1. 2. 3. 4. . . .: . 1953. . 462. .. . .: . 1972, . 336. Goudsmit S., Saunderson J.L. // Phys. Rev. 1940; V.58. p.36. Peinado J., Ibaez J., Hernndez V., Arias E. // Procedia Comput. Sci. 2010, V. 1, P. 2569.


84
.. , .. , .. , .. , , . . - /1/. - , /1/. () /2/. xin () /3/. , xinS () xinB (). () . (Handbooks), . NIST, , , . xinS () xinB () . . 1. 2. 3. .., .., ..// , 2014, . 145, . 601-614. Tougaard S., Chorkendorff I. // Phys. Rev. , 1987, V. 35, P. 6570. .., .. . , , 1979, . 288.


85
(001) Ni .. , .. . .. , , cos0/E02-2m , , S 1/Eb1-2m. , meff S 1/Eb1-2meff m = 0 (., , /1/). meff /2/ Ar+ 1 10 . meff m = 0 (001) Ni. , /1, 2/. , "" , meff = 0.073 (0.086), 0.073 (0.055), 0.167 (0.155) 0.631 (0.452) . 5 (21 ). meff m = 0. "" meff . 1. 2. .., .. . // . 16- . " ", 25-29 2003, , . 1, . 178-179. Shulga V.I. // Nucl. Instr. Meth. Phys. Res. B, 2002, V. 195, 3-4, p. 291301.


86
(001) Ni .. , .. . .. , , <100> "" , 0 , "" : , , , . /1/ , , /2/. . , "" , "" . , . , . , "", . 1. 2. .., .., .., .. // , 1997, 2, c. 77-92. .., .. // , 2014, 3, c. 81-92.


87
.. , , , , /1/. , , /2/. , , , /3/. , . . . . 1. 2. 3. . ., . .. . .: , 2011. Ziegler J. F., Ziegler M. D., Biersack J. P. The Matter. Version SRIM 2008.04. . . // , 2012, . 3, - 142 . Stopping and Range of Ions in . 76.


88
.. 1), .. 1), .. 1), .. 1), .. 1) .. 2), .. 3),4) 1) , , 2) .. , .. , , , , , , 4) . .. , ,

3)

, , . (), , .. . CrNi, . 2080 (80% Ni, 20% Cr) , SiO2 (600 ) Si3N4 (120 ). . Cr7C3 . . CrNi, , , , , Cr7C3 Ni.


89
.. , .. , .. , .. .. , . 46, , . . in in

M

1

i



in in e

i Eint ( x x y y )

e

, Ein

2 x

2 y

2M

1

M 2 .

p0 ( p0 x , p0 y )

(

p0

),

:

y
0

c

. -



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. 0
i E0t i ( px x p y y )

0 0 e
E0

2 2 p0 x p0 y

e

,

2M
0

,

2



.

W (t , x, y) .


90
.. 1), .. 1), .. 2), .. 1) 1) .. , , 2) . .. , , /1-3/. He-Ne , -. .

a)

b)

: a) b) Al/Mg Al2O3 Al, ( ). Mg (Mg 2s 88.5 ). 1. 2. 3. Andrianova N.N., Borisov A.M., Mashkova E.S., Virgiliev Yu.S., //Journal of Spacecraft and Rockets, 2011, Vol. 48, 1. P. 45. .., .., .., //. . . ., 2014, . 78, 6. . 686. .., .., .., .., //. . . ., 2012, . 76, 5. . 586.


91
.. , .. - , , , e-mail: morozov@aie.uz () , . /1/. (Si, Ag, C, Bi, GaAs) Biq+, Csq+, Siq+, Sbq+ (q=1-7) 1 10 . , . 1 5,7. , , . . q = 5,7. 1. Morozov S.N. // ISSN 1027_4510, Journal of Surface Investigation. X_ray, Synchrotron and Neutron Techniques, 2012, Vol. 6, No. 4, p. 660.


92
Cu3 Cu(100) .. , .. , , Cu3, Cu(100) , , , , 1 . - /1/, NEB /2/. 0.6 3 . 500 700 . , .1.

. 1. . , 90. , 1 3 . 1. 2. M. R. Sorensen, A. F. Voter // Journal of Chemical Physics, 2000, 112, 21, 9599. G. Henkelman, H. Jonsson // Journal of Chemical Physics, 2000, 113, 22, 9978.


93
- .. 1), .. 1), C.. 2) , . , " ", . , . ,
1)

2)

. AIREBO /1/ , /2/ , - -- . . , . . 1. 2. S.J. Stuart, A.B. Tutein and J.A. Harrisson // Journal of Chemical Physics, 2000, V. 112, P. 6472. G. Ackland, V. Vitek // Physical Review , 1990, V. 41, 15, P. 10324.


94
(0001) .. , , , . 13-195 (0001) Ar, Xe, Cu, Cu2 /1,2/. , , 50 400 . " / " 6 . 5000 , . , , , /3/ Cu2, . 1. 2. 3. Eckstein W. Computer Simulation of Ion-Solid Interactions, Berlin, Springer Verlag, 1991, 320. Kornich G.V., Betz G., Zaporojtchenko V., Pugina K.V. // Surface Science, 2007, 601, 209. Kornich G.V., Betz G., Kornich V.G., Shulga V.I., Yermolenko O.A.// Nucl. Instr. and Meth., B 2011, 269, 1600.


95
Ar .. , .. , , , . Ar . Ni-Al Cu-Au, 78 390 . 1 800 . " - " 5 . 500 , Ar. [1]. , , , . , , . 1. Ackland G. J., Vitek V. // .Physical Review B, 1990, 41, 15, 10324 -10333.


96
THE FORMATION OF SODIUM NANOPARTICLES IN SODIUM-SILICATE GLASSES UNDER THE ACTION OF ELECTRON BEAM AND THERMAL TREATMENTS E.S. Bochkareva1), N.V. Nikonorov1), O.A. Podsvirov2), M.A. Prosnikov3), A.I. Sidorov1) 1) ITMO University, Kronverksky ave., 49, 197101, St. Petersburg, Russian Federation 2) St.Petersburg Polytechnical University, Polytechnicheskaya str., 29, 195251, St. Petersburg, Russian Federation 3) Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya str., 26, 194021, St. Petersburg, Russian Federation It is shown experimentally that the processing the sodium-containing silicate glasses with the electron beam with electron energy 35 keV and dozes 20-65 mC/cm2 and the subsequent thermal treatment above the glass transition temperature result in the formation of the sodium nanoparticles under the glass surface that manifest themselves in the plasmon resonance absorption band in the 405-410 nm spectral region. The main mechanisms of this effect are the field migration of the positive sodium ions into the negatively charged region under the glass surface, produced by the therma lized electrons, reduction of sodium ions by the thermalized electrons, and the nanoparticles growth as a result of thermal diffusion of the sodium atoms during the thermal treatment. The results are compared with the described in /1/. In that work the silver nanoparticles were synthesized in the silver-containing glasses by the same method and in the same conditions. The computer simulations in the dipole quasistatic approximation have shown that the most realistic model of the nanoparticle structure is the solid or liquid sodium core with two shells, the inner shell consisting of sodium oxide and the external one being vacuum or gas. REFERENCE 1. O. A. Podsvirov, A. I. Sidorov, V. A. Tsekhomskii, A. V. Vostokov // Phys. Sol. St. 2010, V. 52, P. 1906.


97
. . 1), . . 2), . . 3),4), . . 1), . . 3), . . 3),4) 1) , , 2) . . , , 3) , , 4) , ,
3),4)

, . . -

- , , . , . , . , . , . -4 ( ), - ( E = 250 , t =100). n+i ( + ) n. 250 100 , . . .


98
- .. 1), .. 1), .. 2), .. 3), .. 3) 1) - .. , , 2) , , 3) .. , , () , , , , /1/. , , . .1. .1. - -

|----| 2

N2+ 30 T=400oC 40o. /2/ . - , -. 1. 2. .., .., .., .., .. // . 2014. 6. .6. Shulga V.I. // Nucl. Instrum. Methods Phys Res. B. 2014. V. 338. P.8.


99
. , .. , .. , .. , .. , .. , .. , , Xe. . - () ( ). . , . . t=0 Xe (1415) , . LPMD[1-3]. , , . 1. 2. 3. S. B. 47 . 42 Davis, C. Loyola, F. Gonzalez, J. Peralta, // JCPC 181(2010) 2126-2139. Batgerel, E.G. Nikonov, I.V. Puzynin // Bulletin of PFUR. No 1, 2014. pp. 51. , . . , . . , // . 4. 2013. . 56.


100
InFeAs .. 1,2), .. 2), .. 1), .. 2), .. 1), .. 1), P.P. 1) 1) . .. , . , - - , . ,

2)

A3B5 , . InFeAs, GaAs (100) (111) InAs Fe . 200 400, Fe (YF) 0.04 0.25. ~ 25 , ~ 5 /. InFeAs . + 40 , ( , ). , 1014 -2, . , InFeAs, Tg = 300 YF = 0.25, 3 6.3.1019 -3 1015 -2, 17 4 2/.. InFeAs, , , , (, FeAs) . Fe, , , n- , .


101

IV


102


103
270 , - 10 .. , .., , 270 () 16 43 10 -25 20-22 . 10 185 . 230 . . - 15 - . 16 16 - . 20-30 1 . () . , . 1. 2. Didyk A.Yu., Winiewski R. Properties of Hydrogen and Its Isotopes under High Pressure and Technological Applications. Dubna, JINR, 2013, 320 p.Monograph,ISBN 978-5-9530-0358-2. Didyk A.Yu., Winiewski R., Wilczynska-Kitowska. Europe Physics Letters (EPL), 2015, 109, 22001-P1-22001-P6.


104
, Cr, Zn In .. -1), .. 2), .. 3), .. 4), .. 1) , , , 2) . . , , , 3) , , 4) , ,
2)

() - . - , Al, - , , . , , (99.98%) Cr, Zn In , , . , . Al Cr In, ( ). , .


105
Al-Cr .. -1), M. Amati2), H. Sezen2), .. 3), Gregoratti L.2), Kiskinova M.2) 1) , , , 2) ELETTRA Synchrotron Light Source, , , , ,

3)

, . , - , , . () Al (99.9999%) Al-Cr (=1.0; 3.0 .%) . . . , , , , .


106
- .. , .. , .. , .. , .. , , TiO2, . ( ) , 80% 18. TiO2, . . Ti18O1.010,0316O0.180,01 Ti18O1.010,0316O0.830,03. . , TiO2 . . 15-03-06617.


107
La0.9Sr0.1ScO3 - .. 1), .. 1), .. 2), .. 1) , , , 2) , ,
1)

, , . -. , . . , . La0.9Sr0.1ScO3 250 400 . . , , 2 , . , . 13-0300310.


108
Zr1%Nb 1-0, .. , .. , .. , .. , .. , , . , , .. , . Zr1%Nb 80 , 200 , 120 /2 1,5 /2 . Zr1%Nb 1-0 , , , .


109
- Zr-Si-N, , . 3), .. 1), .. 1), .. 1), .. 1) , , 2) , , 3) ', , , ..
1) 1,2)

Zr-Si-N 230-290 Si (001) Zr Si 650 . Si 3,2 27,0 . %. Xe2+ 180 11016 51016 -2. , Si ZrN (CSi17,2 . %) , (3-7 ) ZrN, a-SiN. 17,2 . % . ZrN (CSi =22,1 .%) Xe. 51016 -2 - (CSi =27,0 . %). , . Zr-Si-N Xe.


110
nc-TiN/a-SiNx .. 1) , .. 1), .. 1), .. 1) , ,
1)

Geff, Beff Eeff nc-TiN/a-SiNx () nc-TiN a-SiNx (1) (2). nc-TiN/a-SiNx . - Cij a-SiNx nc-TiN . E, G B Cij. Geff, Beff (1) , (2) -- . (1), , (2), , . , 10 . nc-TiN Geff, Beff. , ~ 4 c = 0,9 Geff , Beff Eeff 190, 330 470 .


111
PHOTOLUMINESCENSE QUENCHING AND DAMAGE FORMATION in GaN UNDER ION-BEAM IRRADIATION P.A. Karaseov1), K.V. Karabeshkin1), A.I. Titov1), M.W. Ullah2), A. Kuronen2), F. Djurabekova2) and K.Nordlund2) 1) State Polytechnic University, St. Petersburg, Russia 2) University of Helsinki, Finland Experimental investigations and molecular dynamics simulations were used to study irradiation induced effects in GaN bombarded by F, P, PF2, PF4 and Ag ions with energy 0.6 keVamu-1. The damage formation and time resolved photoluminescence decay in (0001) wurzite GaN epilayer grown on sapphire substrate were studied. It was experimentally established that irradiation with molecular ions produces thicker surface amorphous layer (SAL) comparing to constituent atomic species, whereas bulk peak (BDP) is almost same except after light F ion irradiation it is smaller. On the contrary, BDP produced by Ag ions is located deeper in the sample and its area is bigger than that for other ions. Interestingly, heavy atoms (Ag) produce smaller SAL than molecular ion of the same mass (PF4). Time resolved PL studies revealed that molecular ion irradiation is more efficient in shortening PL decay time tD compare to its atomic constituents. Heavy atomic atom bombardment affects tD even stronger. The molecular dynamics code PARCAS was used for simulation of ion-beamirradiation induced processes in GaN. MD results show that molecular projectiles produce more big defect clusters in the surface vicinity than atoms comprising mol ecule. This is indication of a nonlinear cluster effect in the damage production for the molecular ion due to the higher cascade density. Heavy Ag ion produce even more dense cascades and hence is more efficient in damage-related effect formation. This finding is in good qualitative agreement with the experiments. Work was supported by RFBR (grant 12-08-00666) and Academy of Finland under the ENIGAZ project. Grants of computer time from the Center for Scientific Computing in Espoo, Finland, are gratefully acknowledged.


112
Si, 64Zn+ .. 1), .. 2), .. 2), .. 4), .. 5) 1) , Mo, 2) , , Mo, 3) , , , 4) , , () . ZnO , . 64 + CZ n- Si(100) Zn 51016c-2 50 350. 2 700oC 1, 4 9. () He+ 1,7M. - - ( ) SIMS-5 (IonTOF GmbH). Nanofab 25 Platform (NT-MDT) (). , Si 100. , Zn , . , , , ZnO, . , , Zn; ZnO.


113

1)

.. 1), .. 1), .. 2), .. 2) - , 2) - ...

. , , : - , ; - , ; - . n-Si, n-SiC n-GaAs 0.9 . , SiC GaAs , Si . , SiC GaAs , . , .


114
, - .. , .. , .. , , , 3 12189 . , . IBAD, (U = 5 ) . SEM EPMA ( JSM-5610 LV EDX JED-2201, JEOL; E = 20 ) RBS (4He, E0 = 1,2 ; AN-2500, High Voltage Engineering Europe). , , , . RBS ~100 ; ~10161017 2. 7 16 , 9.913-90 3% NaCl + 0,1 % H2O2, - . , , .


115
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116
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117
Zr, Ti Ni ..1, ..2 ..3, ..4, ..4 1 , .., , 2 , , , 3 - .. , , 4 . .. , , Zr (0,3 ), Ti (0,25 ) Ni (0,1 ) 15- ( 10 ) (-4, ) [1, 2] . -4 [1, 2]. . (ERDA) , , . . , . , . 1. 2. .., .., . . // . , . 2013, 1, . 2226. A.Yu.Didyk, L.I.Ivanov, O.N.Krokhin et al. // Doklady Physics, 2012, V. 57, No. 1, pp.79.


118
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W- (230 ), 10- ( 10 ) (-4, ) [1, 2] . -4 N+- - [1, 2]. W . W . ERD , W W-, . . , W-, , , . 1. 2. .. , .. , . . // . , . 2013, 1, . 2226. A.Yu. Didyk, L.I. Ivanov, O.N. Krokhin et al. // Doklady Physics, 2012, V. 57, No. 1, pp.79.


119
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120
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121
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122
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123
ESR, RBS-C PIXE .. 1), .. 1), .. 1), .. 2), ..2), .. 1) 1) . .., ., 2) . .., , ; . . /1/ , , , , . /2/ /3/ . . . : ESR, RBS-C PIXE. . 1. 2. 3. L.Pelaz, L.A.Marques, J.Barbolla, //, J.Appl.Phys. v.96, 11, 5947, (2004). .. , .. , .. , : . . V . . . : , 2014, .75-76. Morozov N.P., Tetelbaum D.I., //, Phys. Stat. Sol. (a), 1979, V. 51, 2, P 629-640.


124
.. , .. , .. , .. . .. , , , , , -, , - , - , . /1,2/ - Al-Me (Me=Fe, Cu, Co, Ni, Sb) Al-Si, , (0,04-0,06 ) . . , . 1. 2. .. , .. //, 2000, 4, . 99. .. , .// , 2004, 3, . 75.


125
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126
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127
- .. , .. , .. , .. .. , , E-mail: dmitr2002@tsu.tmb.ru , Si . () ( /1/), . /2/. , . ( /1/) in situ Si-ISi-II, P-h- (- ) , . , , () Si. , 90 (90Sr + Y , 5 -2 -1 10 I = 1,310 cm s , F = 2,3410 cm-2) Si-II . 15-02-04797 . 1. 2. Gridneva I.V., Milman Yu.V., Trefiliv V.I. // Phys. Stat. sol. (a), 1972, 14, P. 177. Dominich V., Gogotsi Y. // Rev. Adv. Mater. Sci., 2002, 3, P. 1.


128
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100 /1/. , . , , XAFS. , . XAFS- . - . . 1. .. . // . . 2013. . 56. 11/3. . 53-56.


129
.. , .. , .. ., ,, . . , - /1/, - , /2/. , , , . . , , ( /3/, ). . . ( - , ..). 1. 2. 3. .. , .. // , 2014, .9, .9, .6. .. , .. // , 2014, .9, .5. .. ,.. // , .3, .79.


130
- ..1), ..1), .. 1), .. 2), .. 2), .. 2), .. 3) 1) , , 2) , , 3) , , , , . , . , (k=4-7) . 0,68 , , . HfO2 - . , , , , , , , HfO2 . 1-2 . 14-07-00844 .


131
.. 1), .. 1), .. 1), .. 1), ..2), .. 2) 1) , , 2) , , - 100 . , . - . . , . - , . , , -- 100 . . 15-07-99656/15 28 2015.


132
(C, Mn, Cr, Si) , .. , .. , .. , .. - , , ; arustamov@aie.uz () - 2-5 . . , , , . , , . . - , . , , , . ( 1500 0CD = 5.4*10-5 2/, 15000C D = 8.4*10-5 2/. , -, (C~ 0.7%,Cr, Si 0.25%, Mn 1.6%), -, - , ( 1500 0 =8.4*10-7 2/) .


133
.. , .. , .. , .. , .. . - , , ; arustamov@aie.uz . , 10- 4 . . , (10-90 B), 200-400 B . . , , . , , . ( ) , , , - ). , , . . , , , , , , .


134
.. , .. , .. , .. - , , ; arustamov@aie.uz () . , . , () . . , . . , , ~ 102 , - . , dn , , () , .


135
- .. , .. , .. , .. - , , ; arustamov@aie.uz , . . l r : (1), , T(M, 0)=0, M () (2), - , 2 . (1) (2) (, ) = ' M' )d ', dQ (3) M' (4) , , . (.1). , , , , ( . I , II , III , X=0. .2. , , , -0/2.

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136
.. , .. , . , .. , .. - , , ( Eg = 3.37 ) . () , ZnO. , 3,5 , . 10 , 15 , 20 , . , ZnO 4 8 . , , . 8 ZnO , (0001) ZnO [1]. 1. Komolov S. A., // J. Phys. Cond. Matter. 1999. Vol. 11. P. 9581.


137
Nb, Ta Ag SF5+ .. , .. , .. , .. , .. , .. - , , /1/. , , . . - Nbn+ (n=1-15), Agn+ (n=1-13) Tan+ (n=1-9) /2/ Xe+ SF5+ 8,5 . , Agn+ SF5+ Xe+, /3/. , Nb Ta SF5+ Xe+ . Agn+, Nbn+ Tan+, SF5+ Xe+, , . SF5+ - Nbn+ Tan+. 1. 2. 3. Wucher A. //Mat.Fys.Medd.Dan.Vid.Sel. 2006. V.52. P.405. .., .., .., ... //XVI . . -2003, .1, .367. Ghalab S., Staudt C., Maksimov S.E., Mazarov P., Tugushev V.I., Dzhemilev N.Kh., Wucher A.. //NIM. 2002. V.B197. P.43.


138
SinOm+ .. , .. , .. , .. , .. - , , Xe+ - - SinOm+ . , , SinOm+ . SinOm+, , . , - , SinOm+ . ~10-6-10-5 ~10-5-10-4 SinOm+ . , , SinOm+ /1/. , SinOm+ , . 1. .. // . 2012. 8. C.28-34.


139
CdTe, .. , .. , .. , . , .. - , , . -mail: isakhanov@aie.uz (0=0,5-5 ) Ar+ + CdTe. : , , . , 0=2 5-100 . CdTe 1100 3-4 10-7 . , CdTe Ar+ 0=1 , D1015 c-2 Te, D=1015-5 1016 c-2 Cd. D=5 1016 c-2 Cd Te ~75 .% 25 .% . . + CdTe, CdTe . D5 1015 c-2, CdTe Ba Te, D>5 1015 c-2 Ba Cd. CdTe, Ba+ (D=6 1016 c-2) Cd0,5Ba0,5Te. , Cd0,5Ba0,5Te . Eg d20 ~1,9 , d35-40 1,7 . .


140
u Si-u .. , .. , .. , .. , .. - , , . -mail: isakhanov@aie.uz u Si-u Na+ c E0=1 . NaCl (100) =350-450 10-7 . Cu (100) Si . 50-500. , Na+, . , (D51016 -2) 70-80 , Na+Cu. Na 40-45 .%. d70-80 Na d250-300 (Na) 1-2 .%. =750 Na, . Na+ Si-u NaSi NaSi2. u, Si-u Na , . .


141

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142
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.. 1), .. 2) - , , Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul, Korea

ZnO n- . ZnO [1] , Zn. ZnO p- . - ZnO ( n-, p-) [2]. ( ) ZnO ( ~100) "" . , Zn ZnO - () JICA (). Zn 1018 -3 Si 100 . 1. 2. Look D.C., Reynolds D.C., Sizelove J.R., Jones R.L., Litton C.W., Cantwell G. and Harsh W.C.// Electrical properties of bulk ZnO.// Solid State Commun. - 1998. V. 105(6). pp. 399-401. Yuldashev Sh.U., Nusretov R.A., Khvan I.V.,. Panin G.N and Kang T.W. Electrical and optical properties of ZnO thin films grown on Si substrates // Journal of Applied Physics., 2006. - V.100. - pp. 013704_1-4.


143
.. 1), .. 2), .. 1), .. 1) - , , 2) Helsinki Institute of Physics and Department of Physics, University of Helsinki, Helsinki, Finland

1)

, , - - WS512K32V20G24M. : 1) 2) . /1/ - . : - , n+1 n ; - -, ; - , , , , 1- /2/, . 1) 2) Oksengendler B.L., Maksimov S.E., Turaeva N.N., Djurabekova F.G. //Nucl.Instr.Meth.B.. 2014. V.45. P.326. . . , , 1988, 240 .


144
, + + Si(111) .. , .. , .. , .. , , , . , , , .. /1/. Si 350-380 . , . Si . , , p-i-n . p-i-n , . , /2/: 1) : 20 500 . U=f() ; 2) 2,1 -1; 3) 100 1 . 1. 2. .., .. . // , 1998. 5. . 7883. .., .., .., .. // . IAP 04779, 10.10.2013 .


145
.. , .. , .. , .. , , (ex situ), , , , .., (in situ), : , , , . . . . , , . (in situ) Si(111). Si(111) Si(100) + ( ) 0=0,5 1 D10161017-2 10-7 . 60% , =1300 60 120 Si(111), Si.


146
, Al/Si, Al/NaSi .. , .. , .. , .. , , , AlSi Al/(Na+Si). Al Na Si ( 10-5 ). , , , . Al Si (111) 500 . Al-Si , Al + Si ~ 100 . = 700 30 Al + Si ~ 600 , Al 1000 1200 . Al 150 200 . Si Al. Al Si 800 . Al+Si ~ 800 , ~ 40 .% 60 .% . Al Si Na 200 . Na Si NaSi NaSi2, 100 . 700 Na NaSi2 300 350 , 30 40 . Na, NaSi2 Si, 150 200 . Al 500 . Al NaSi2/Si 8 10 . .
2


147
TiNFe .. , .. - , , - TiN - -Fe. , TiN--Fe, , Ti-N-Fe. , TiN l=10 Ti =3 , =2 , Fe TiN =5 . . .

.1 Ti, Ti -Fe Fe, . =0,5; 1,5; 3 , Ti 10 () 20 (). .1 Ti, Fe, Ti (=0,5, 1,5 3 ). , . .


148
Si, SiO2 .. , .. , .. , .. , , , . Si, GaAs SiO2 . , CoSi2 NaSi2 50 20 0,3 0,9 . Si, SiO2 Ar+. Eg Si (h , d ). Eg Si h, Eg, 1012 1,5 20-25 1,3 30-35 1,2 50-60 1,1 (h = 30 35 ), d, 100-120 300-350 450500 1,8 1,4 1,2

, - h 25 30 , 30 35 d 400 450 .


149
SiO2/Si .. , .. , . , .. , , SiO2/Si . SiO2 . SiO2, . = 20 100 Si , = 100 500 . - . , - m, g, - = 76 SiO2/Si . SiO2 30 60 120 200 400 500 , 8,5 9 9 9,2 9,2 9,2 g, 8 7,8 8,2 8,2 8,2 I, = 76 8 10 10 10 10 10 m 1, 1, 2, 2, 3, 3, 2 8 4 8 2 2



, , "" SiO2, 50 60 , = 300 400 . .


150 .. 1), .. 1), .. 2), .. 1), .. 3) 1) . .. , , 2) . .. , , 3) . .. , , 2 YBa2Cu3O7-x GdBa2Cu3O7-x /1/. (132Xe27 + (167 M), 84Kr17 + (107 M), 40Ar8 + (48 M)) 2,5 M . . , , , . , , . 2,5 , GdBa2Cu3O7-x YBa2Cu3O7-x . .. GdBa2Cu3O7-x. 1. S. Kang, A. Goyal, J. Li, A.A. Gapud, P.M. Marlin, L. Heatherly, J.R. Tompson, D.K. Christen, F.A. List, M. Paranthaman, D.F. Lee // Science, 2006, Vol. 311, 1911.


151
Au .. 1), .. 1), .. 2) 1) , , 2) . .. , , (001) , KAl2[AlSi1O10](OH)2, , . , . . Au (170 )/ (001). , , , [00l] [111] . . , , , .


152
110 .. 1), .. 1), .. 2), .. 2), .. 3), .. 3) . .. , , 2) , 3) , ,

1)

() , /1-3/. - Zr-1% Nb ( 110). 100 . 7.7 , . - 200 . Zr-1% Nb - . 30% . . 1. 2. 3. .., .., .. . // . 2013. 5. .42. .., .., .. .// . 2014. 4. . 37. Legostaeva E.V., Kulyashova K.S., Komarova E.G. et al.// Mat.-wiss. u.Werkstofftech. 44 (2013) 188-197.


153
.. , .. , , (), /1/. , . Al2O3 Sin+, Aln+, C+, Crn+, Fen+, Con+, Mon+ Tin+ (100 , =10151017 2) (=1105 , =3001800 ). Al2O3 (), /1/. , , /1/. , Al2O3 . , , . ( Crn+, Fen+, Con+, Tin+) (Sin+, Aln+, C+), , ( C+, Fen+, Mon+, Tin+). Al2O3 1800 . 1. .., .. // J. Surf. Invest., 2010, V.4, No 2, P. 327.


154
, .. 2), .. 1,2), .. 1) - (C), -, 2) SCKCEN, , ..
1,2)

1)

(H) (W) . (H-H, H-W, W-W): EAM /1/ BOP /2/. , - (ab initio). EAM /1/ ab initio, BOP /2/. , , , . , . 1. 2. Bonny G., Grigorev P., Terentyev D. // Journal of Physics: Condensed Matter, 2014, V. 26(48), P. 485001. Li X.-C. et al. // Journal of Nuclear Materials, 2012, V. 426(13), P. 31.


155
RADIATION EFFECTS ANALYSIS OF CMOS DEVICES IN LEO ENVIRONMENT Muhammad Sajid1), N.G. Chechenin2), Frank Sill Torres3), E.U. Khan4), Shahrukh Agha1), Adeel Shahzeb5) 1) Department of Electrical Engineering, COMSATS Institute of Information Technology (CIIT), Park road, Islamabad, Pakistan, Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, Russia, 3) Department of Electrical Engineering, UFMG Brazil, 4) Department of Physics, CESET Islamabad Pakistan, 5) Satellite Research and Development Center SUPARCO Lahore Email: sajiddikhan@gmail.com, franksill@ufmg.br , nchechenin@yandex.ru, ehsanukhan@ceset.pk, shahrukh_agha@comsats.edu.pk

2)

This paper concentrates on the impact of Low Earth Orbit (LEO) ionizing radiation environment on NMOS transistor fabricated in 65nm bulk CMOS technology node. The energy deposited by protons and heavy ions present in Earth radiation belts, Solar flares and Galactic Cosmic Rays was estimated which can results in degradation of device performance by the creation of electron-holes pairs. The impact of technology scaling on charge sharing, critical charge, SEU cross-section, I-V characteristic and SEU rate was determined. The estimated SEU rates were compared with the devices fabricated in 90nm, 45nm and 32nm. Finally, the impact of spot shielding of 100mils thickness on LET spectrum of transmitted particles was evaluated. In order to characterize the robustness of scaled nano-CMOS devices, state of the art simulation tools like visual TCAD/Genius, GSEAT/VisualParticle were utilized whereas LEO radiation environment was determined with the help of OMERE-Trad software.


156
SiO2 .. 1), .. 1), . . 2), .. 2), .. 2) 1) . .. , , 2) , , , . , . ( ) , . (, 1 2 - ) . , , , . . . , , , .


157
.. 1), .. 2), . . 2), .. 2), .. 2), .. 2) 1) - .., , 2) , , . () . . , . , . . (C22H10O5N2) 50 . , . .


158
.. 1), .. 2), 3), .. 3), 4), .. 3), 5), .. 6) 1) , . , 2) , . , 3) . .. , . , 4) . .. , . , 5) . .. , . , 6) . .. , . , - - , . , , - () . , . ( 1416), ( 15-48-03210).


159
.. 1), .. 1), .. 2), .. 2), .. 1), .. 1), .. 2), .. 1) 1) . .. , , 2) , , , . (), , - /1/. . - , , . - MgO , Mg2SiO4, - . - . 13-08-12038/13 _. 1. .., .., .., .., .., A.M. - . 2- . II. .: , 2011. 512 .


160
.. , .. , .. , .. , .. - .. .. , , ~20 () 20100 , /1/. - 101951020 2. . /23/.

. 1. . 1. 2. 3. Chechenin N.G., Chernykh P.N., Vorobyeva E.A., Timofeev O.S. // Appl. Surf. Science, 2013, 275, 217. Voronina E.N., Novikov L.S., Chernik V.N., et al. // Inorg. Mat.: Appl. Res. 2012, 3, 95. Voronina E.N., Novikov L.S. // RSC Adv., 2013, 3 (35), 15362.


161
, - .. , .. , .. , .. , .., .. , , . . - , , . - - : Si, Zr, Be. - Nicolet Termotech ( 4000 - 400 -1 0,09 -1, 75 /). - EXCEL2013 . , Al, Be , ( 3% ). . , Be-O, Al-O ,


162
RBS AND EDS INVESTIGATION OF DEPOSITION CONTENT IN CNT-BASED FILTERS FOR LIQUID SOLUTIONS E.M.I. Elsehly1),2), N.G. Chechenin1), K.A. Bukunov1), A.V. Makunin1), A.B. Priselkova1), E.A. Vorobyeva1), H.A. Motaweh2). A.A. Shemukhin1)
2) 1) SINP MSU, Russia, Damanhour University, Egypt

Carbon nanotubes (CNTs) became a focus of attention of many scientists and companies worldwide. The small dimensions, strength and the remarkable physical properties of these structures make them a unique material with a whole range of promising applications. CNT-based filters have a prospective advantage in comparison to the commercial filters already in operation because they are lightweight, do not use any chemicals, and do not require electricity or heat to operate. In the report we give an overview of the use of CNT-based filters as adsorbent for metal ions in liquid solutions like manganese. Different types of multiwall CNTs (MWNTs), both, commercial and grown in our laboratory, were used to prepare the samples of filters. In particular, large arrays of vertically aligned CNT (VANTs) were fabricated by a continuous spray pyrolysis method by using cyclohexane as a carbon source and ferrocene as a catalyst source. To estimate the efficiency of filtration, different parameters were measured, such as conductivity of solution, pH, contact time, optical measurements. Also the samples of CNT-filters after filtration process (with graphite as a substrate) were characterized by RBS and EDS techniques to investigate the deposition content in the filter. It was found that CNT-based filters are efficient for the adsorption of heavy metals from aqueous solution.


163
DETERMINATION OF THE NI (Tl) DETECTOR EFFICIENCY USING RADIOACTIVE PARALLELEPIPED SOURCES Mohamed S. Badawi1), Mona M. Gouda1), Ahmed M. El-Khatib1), Mohamed A. Elzaher2), Abouzeid A. Thabet3), Ahmed A. Salim1) and Mahmoud I. Abbas1) 1) Physics Department, Faculty of Science, Alexandria University, 21511 Alexandria, Egypt, 2) Department of Basic and Applied Sciences, Faculty of Engineering, Arab Academy for Science, Technology and Maritime Transport, Alexandria, Egypt, 3) Department of Medical Equipment Technology, Faculty of Allied Medical Sciences, Pharos University in Alexandria, Egypt The efficiency transfer technique is considered as a straightforward mathematical method to calculate the full-energy peak efficiency of 3"3" NaI (Tl) scintillation detector over a wide energy range. The calculations were based on calculating the effective solid angle ratio between the detector surface and the parallelepiped sources located at various distances from detector surface. Moreover, the reduction of the photon by the source-detector structure [detector material, detector end cap and holder material] was considered and determined. This method is basically useful in setting up the efficiency calibration curve for NaI (Tl) scintillation detector when there is no calibration sources exist in dimensions form. The values of the efficiency calculations using mathematical method were compared with the measured ones and the results in general show good agreements.


164
VARIATION OF HEMATOLOGICAL PARAMETERS IN RATS EXPOSED TO ELECTROMAGNETIC RADIATION Sahar E. Abo-Neima1), Karolin Abdel-Aziz Barakat1), Hassan Tourk1), Marzoga F.Ragab3) and Hussein A. Motaweh1) 1) Department of Physics, Faculty of Science, Damanhour University, Egypt 2) Department of Zoology, Faculty of Science, Damanhour University, Egypt 3) Department of Physics, Faculty of Science, Omar El-Moktar University, Elgouba Lebya Objective: To investigate the effects of electromagnetic raditions on some hematological parameters of male white rats. Methods: Fifty male albino rats were equally divided into three groups namely A, B, and C. Animals of group A used as control group which didn't receive any treatment. Animals of group B was divided into two subgroups namely B1 and B2 which were discretely exposed to 50Hz, 3KV/m electric field (EF) for a period of 15 day (8 hours/day, 5day/week). Group B2 animals were left to survive and housed at normal environmental conditions similar to control group A for a period of 15 day post exposed. Animals of group C are divided into two subgroups namely C1 and C2 were discretely exposed to the EF for a period of 30 day (8 hours/day, 5day/week). Group C2 animals were left to survive and housed at normal environmental conditions similar to control group A for a period of 15 day post exposed. At the end of this per iod, blood samples were collected from all groups for investigation hematological parameters. Result: showed that exposure to electromagnetic radiations originated different metabolic and hematological disruption, which appeared to be related to the duration of exposure, the treatment to EF caused a changes in hemoglobin concentration (Hb), white blood cells (WBCs), red blood cells (RBCs) count as compared to control group, Values of RBCs, WBCs are decreased with increasing exposure time and there is no improvement in hematological parameters for recovery groups post exposed. This means that these components of blood are broken due to irradiated by EF from technological devices which used daily and there is a significant effect in hemoglobin molecule structure due to damage/or broken, also the exposure induced changes in Eosinophile, Hb ,Paced Cell Volume(PCV)Mean Corpuscular Volume(MCV) and Mean Corpuscular Hemoglobin Concentration (MCHC) levels . Conclusion: Exposure to electromagnetic radiations is responsible for the variations of some hematological parameters in rats.


165
RBS EDS .. , .. , .. , .. , .. , (), , () , . , , . . , . () , ,


166
NV- , , .. 1) .. 1), .. 1), .. 1), .. 2), .. 2), 1) .. , 2) .. , , , N V , () . Ib 750-1150. NV- - . (111) I Ib - (1200-1600oC, 3-7 ) H2+ 25 - 50 = 11013-3x1017cm-2 N+ I 200 450oC . , , , NV- . .


167
, .. 1), .. 1), .. 2), .. 3), .. 4), .. 4) 1) " ", , 2) . .. , , 3) - .. , , 4) . .. , , He+ 2 C, Cu W , -4, . Ar, D2. , . ~100 / ~500 . . . .1 : C, Cu W .

.1. : C, Cu W . ) 15-3, E=82,N=14; ) 22-3, E=61,N=20 . . , 15-0205995.


168
LV ... : .. , .., .., .., .. , . ..