Äîêóìåíò âçÿò èç êýøà ïîèñêîâîé ìàøèíû. Àäðåñ îðèãèíàëüíîãî äîêóìåíòà : http://danp.sinp.msu.ru/pci2012/utro30_stend.pdf Äàòà èçìåíåíèÿ: Tue May 22 23:28:52 2012 Äàòà èíäåêñèðîâàíèÿ: Mon Oct 1 21:37:43 2012 Êîäèðîâêà:

Ar+ .. , .. . .. , , . Cr ~ 50 GaAs. Ar+ 80 1015 ­ 3.1016 -2. Cr . R < 1015 -2 2,2 ­ 2,8 . 0,036 ­ 0,039 . 1015 ­ 5,1.1015 -2 R0(h) , h < 2,2 R(h) < R0(h). 0,027 ­ 0,030 3.1015 -2 0,023 ­ 0,026 5.1015 -2. 5.1015 ­ 1016 -2 R0 < 1,8 . 10 16 -2 R0(h) 2,2 ­ 2,8 . . > I0 16 -2 . ( 0,7). . - FE -NI-CR .. 1), .. 1), .. 1), .. 2 1) , -, 2) SCK-CEN, ,
)

, . . ­ . , , , . ( , , ) /1/ . Fe70Ni10Cr20 /2/. , , . " - " 2009-2013 . 1. 2. Terentyev D., Bacon D.J., Osetsky Yu.N.// Phil. Mag., 2010, Vol.90, 7 -8, P.1019 Bonny G. et al. // Modelling and simulation in materials science and e ngineering, 2011, 19(8), #085008. Si(111) .. , . ... , , . , , , . , , , . , . Li, Na, Rb Si(111) 1 . , , , .


/1/ . 1. .., .., .., .., .., .., .. .. 1543986, . . 1990.- 6. .266. .. , . .. , , , , , . , , . , /1 -3/. , . 1 2 3. .., .., .. // , 1997, 1, .11. Woodworth J.R., Aragon B.P., Hamilton T.W. // Appl. Phys. Lett. 1997, V. 70, P. 1947. Kristya V.I. // Glow Discharges and Tokamaks. - New York: Nova Science Publishers, 2011, P. 329. - - .. « », , : , , , - . ( Fe 2O3), . ; . . . - iTiO+/iTi+, iTiO2+/iTi+ (iFeO+/iFe+, iFeO2+/iFe+). - . . , . , , , , . . . , - .. . . , , (, , Na, K) .


- Si Al - , , . - 68 ( LVV) , , , , - 64 58 . 1 . , , , - , AlO, Al2O3. - , , , AlO, Al2O3 - .. 1), .. 2), .. 1), .. 1), .. 1) 1) . .., , , 2) , , -- (). c 10 20 10-14 Â 5·10-14 ­2. - , , - , . , -, , 200 , . , . « - » 2009 ­ 2013 16.740.11.0151 ( 12-02-97533). Fe-Si-Al, .. 1), .. 2), .. 3), .. 3), 4) , ., 2) . .. , , - , , 4) . .. , ,
1)

3)

, , , - (10-100 /) (10-20 ) - FeSi-Al, . , 3 . , , , . , ( 7.5341.2011) ( 12-02-97519). TiN ZrNB . .. , .. . , , , . , , , .


. , , , , , . TiN ZrNb, . - , TiN (S, Cl, C, Cr, O, Mn, Ni) . - TiN Ti (367, 418, 451) N (379 ), . - . TiO2, -. - TiN ZrNb , Cr, Mn . - .. , .. , .. . .., , , - () , , - . /1/. , , -, . , - , . , . « - » 2009 ­ 2013 16.740.11.0151 ( 12 -02-97533). 1. .., .., .., .. - // . 2011. 5. .18-25. .. . .. , , , , . , .. ( ) . ­ WO3, Ta2O5, MoO3, Nb2O5 ( Ar+, He+) 1 3 . , Ar+ 3 44% W, 12% Ta 2% Mo. Nb . , WO3, Ta2O5, MoO3, Nb2O5. - VI V . , He+ 1 3 WO3: 2% W (1 ) 10% W (3 ). , WO3 5 He+ 3 . , WO3, Ta2O5 MoO3 Ar+ (3 ). .


.. , .. , .. , , . , . [1,2] , - . . 1-0 . [3]. , . 1. 2. 3. .., .. - : - , 2008.-252 .., .., .. : STT, 2004. -270 . Thomas Nelis, Jozsef Pallosi. Glow Discharge as a Tool for Surface and 41: 227­258, 2006. : . ­ . -. - .: ; Interface Analysis. Applied Spectroscopy Reviews,

Co CoSi2, Si .. , .. , .. , .. , .. , , , Co Si (D 5 1015 -2) Co + CoSi + CoSi2. ( + ) - CoSi2, . - CoSi2/Si, Co Si . (d ­ , h ­ , ­ ) CoSi2, Co+ Si . . CoSi2 0, 0 ,5 1 3 5 D , c -2 1015 5 1014 1015 5 1015 1015 1015 , 950 950 1000 1050 1100 1150 d, 18 10 15 25 12 10 ­ 20 ­ 15 ­ 18 ­ 30 ­ 15 ­ 12 h, 30 30 30 30 45 50 ­ 35 ­ 40 ­ 40 ­ 40 ­ 50 ­ 60 , 45 45 45 45 40 40 ­ 50 ­ 50 ­ 50 ­ 50 ­ 45 ­ 45

, D = const , . 0 = const D d. AB INITIO .. 1) , .. 1) , ,
1)

, sp1 ( ). , /1/, /2/ /3/. , . ,


(H, F, O) - . . , , . . . , (~0.6). 1. 2. 3. Kudryavtsev Yu., Evsyukov S., Guseva M., Babaev V. et al., //, Carbon, 1992, V. 30, p. 213. .., .., .., .. ., //, . , , 2007, .5, . 89. Franco Cataldo, //, Polyynes Synthesis, Properties, and Aplications, New York, CRC Press Taylor &Francis Group, 2006, 506p. .. 1), . 2), .. 3) 1) , , Technische Universitaet Wien, Wien, Austria 3) , ,

2)

( ) 60 , (0001) Ar, Xe /1,2/, Cu2, Cu /3/ 100 - 400 . - /3/ , 13, 27, 39, 75 195 Cu2 50 - 200 /. , 13 30 , , , . , Cu13 , . 1. Kornich G.V., Betz G., Zaporojtchenko V.I., Bazhin A.I., Faupel F. // Nucl. Instr. and Meth., 2005, 227, 261. 2. Kornich G.V., Betz G., Zaporojtchenko V., Pugina K.V. // Surf. Sci., 2007, 601, 209. 3. Kornich G.V., Betz G., Kornich V.G., Shulga V.I., Yermolenko O.A. // Nucl. Instr. and Meth., 2011, B269, 1600. .. , .. . .. , ,

H2O HCl , H2 N . , , . , , . , ,
2

: H

, U ( r ) - ;

f r,v ­ , . . , , , .


- - .. 1), .. 1), .. 1), .. 2), .. 2) 1) . .. , , , , ,

2)

- . , . , . , , , 0,1 Â 0,2 , , 10% . ., . - () . « », , . , . - .. , .. . . , , -, , . - . - Ar+ + K 3-15 . - . (, Ar, , .) (< 0,1%). - Al 68 Si 91. C, O . - . . -. , - , . ( - Si 91 , ) - 1s22s22p63s23s23p2. - - .

GAN .. 1), .. 1), .. 2), .. 2), .. 2) , , 2) . , -,

1)

- , - - IMS 7f «CAMECA» , - GaN, Ga2N2 Ga2N , . , .. , . . - , .


- GaN

- GaN/SiC .. 1), .. 2), .. 3), . 1), .. 1), . 1) 1) , , 2) . , -, - , ,

3)

, NH, NO OH . H, C2, C O . CN ­ 225 0 325. CNO 2 325 0 . , , Ga . CN CNO, , , SiN.

GaN

- GaN/SiC .. 1), .. 2),3), . 1), .. 1),3) .. 1), . 1) 1) , , 2) . .. , , . .. , ,

3)

Ga GaN GaN2 45 . , GaN GaN2 , 250 Ga -N .


, , , .

GaN Cs+

.. , .. , .. , .. . , , . F - . F- , - [1], - [2] (1 ) je/ji F : . (1) , (B -1) (2 ) (3) (3) . , [3]. (3), ( ) (4)

(2) - ,

, F . ~3/2, (3), ~. F- 1,5-1,6. Zn, Cd Hg. >2-2.5, T-F . 1 .. - .., .. . //. 1972. .7. . 1504-1508. 2 .., .. . / . .. : 1958. 3 Nottingham W.B. //Phys. Rev. 1941. V. 59. P .906.


.. , , , , () [1]. . , . (m1) ( m2) , m3. 2 . (d) ( m3, 2) , , d=Rp32()cos(--2), Rp32() ­ (m2) . , : 1/d = 1/(Rp12 cos ) + 1/(Rp32 cos(--2)), (1) Rp12 Rp32 - . (1) Rp12 Rp32 . 1 . // . . III, . . ., .: , 1998, .237. Nb- D+-
1)

.. 1), . 2), .. 3) , .., , 2) Narodove Centrum Badan Jadrowych, Otwock -wierk, Poland 3) , ,

Nb- , , « » -4 (). D+. -4 D+- [1]. D+ . , - . ERD- , Nb-, , . . , [1, 2]. 1 Didyk A. Yu.. Physics of Particles and Nuclei Letters, 2012, Vol. 9, No. 2, pp.186 ­191. 2 .., .., .. . , 2012. . 442, 3, .1. Si(111) Na+ .. , .. ... , , , . - , . , , , , , . , in situ


( /). "-" Si(111) , Na+. , Si(111) Na+ 200 , 200Â500 . . Si(111) Na+ . - , .. , .. , .. , .. , , - , Xe + NbC. - [1]. (KER -distributions) [2] - 10-5-10-3 . KER- () « » [3] [4]. , , , . . 1 Bekkerma n A.D., Dzhemilev N.Kh., Rotstein V.M. //Surf. and Interf.Anal. 1990. V.15. P.587. 2 Bekkerma n A.D., Dzhemilev N.Kh., Verkhoturov S.V., Veryovkin I.V., Adriaens A. //Mikrochim. Acta. 1998. V.15 P.371. 3 Klots C.E.//Z.Phys.D. 1987. V.5. P.83; 1991. V .21. P.335. 4 ., .. . : . 1975. GAN .. 1), .. 1), .. 1), .. 2), .. 2), .. 2) 1) , , 2) . , -, - , - - IMS 7f «CAMECA» , . , GaN, Ga2N2 Ga2N , .. , . . .

- GaN


ATOMISTIC SIMULATION of MOLECULAR ION IRRADIATION of GaN: M.W. Ullah1), A.Kuronen1), F. Djurabekova1), K.Nordlund1), A.I.Titov2), and P.A. Karaseov*2) 1) University of Helsinki, Finland 2) State Polytechnic University, St. Petersburg, Russia The molecular dynamics code PARCAS was used for simulation of ion irradiation of GaN. Wurtzite -structured GaN cells were constructed with an open surface in the 0001 direction. The cohesion of the molecule was d escribed by Lennard-Jones potentials, the substrate was modeled using a Tersoff-like many-body interatomic potential. The ion (or molecular ion) was placed above the simulation cell surface, and directed towards the surface at an angle tilted 7 with respect to the sample normal. After each irradiation simulation, the damage was analyzed using Voronoy polyhedra centered on each initial atom position. Polyhedra with no atom were labeled vacancies, polyhedra with 2 or more atoms interstitials, and polyhedra with one atom of the opposit e type to the initial one antisites. The single specie irradiation results show that even though GaN is a se miconductor, there is fairly strong in-cascade damage recombination in the material. Molecular projectiles produce more point defects than one can expect from linear combination of atoms comprising molecule. This effect increases with the number of atoms in molecule. The quantitative results of cumulative studies show that for single light (P and F) atom irradiations, damage increases roughly linearly with increasing fluence. Most intere sting is that the damage for the molecular projectile is clearly higher than that for the single ions. This is indication that there is a nonlinear cluster effect in the damage production for the molecular i on due to the higher cascade density, in good qualitative agreement with the experiments. Work was supported by RFBR (grant 10 -08-91751) and Academy of Finland under the ENIGAZ project. Grants of computer time from the Center for Scientific Computing in Espoo, Finland, are gratefully acknowledged. . . , , . , , , , /1/. . ­ , r r0 r r0 , r0 ­ /2,3/. , , -, . 1 2 3 . ., . . . .: , 1995. 175 . ., . . . . . . . .: «», 1969. 756 . . . // , 1992, . 8, . 27. .. 1, .. 1, .. 2, .. 1, ..1, .. 1 1 , , 2 , , -1 . Ar+ c - /1/. T = 90, 250 400° Ar+ 30 Y. , (~ 1019 /2) T = 250 400 ° Y 2 / Y T = 90 °. , . 250 400 ° - ,


90 ° . TRIM.SP OKSANA , , Y T = 90 °. Y T = 250 400 ° OKSANA. 1 Andrianova N.N., Borisov A.M., Mashkova E.S., Parilis E.S., Virgiliev Yu.S. // Nucl.Instrum.Methods in Phys.Res. B. 2009. V. 267. P. 2761-2764 .. 1), .. 1), .. 1), .. 2), .. 1), .. 1), .. 1) 1) , , 2) , , () () -1 -2000 Ar+ 30 . -1 400 ° . , Tt 150 °C /1/. T > Tt - -1. , 400 °, 17 /. , , . -2000. 1 .., .., .., .., .., .., .. // , 2010, 3, .42-46. (001) Ni (001) Au .. , .. . .. , , , (001) Ni (001) Au, . , < o ( o ­ , ­ ) /1/ . , 100 % , . , , (001) Ni [56,3o, 57,8o] [82,5, 85,5] 10,0 ± 0,4 , [112,8o, 116,4o]. , (. /2/) . , 9,0 ± 0,4 25,0 ± 0,4 [56,3o, 57,8o] [82,5, 85,5]. : . 100% . 55,0 ± 0,4 , . 1 2 .. // , . ., 1990, . 54, 7, . 1283 -1287. .., .., .., .. // , 1997, 2, . 77 -92.



(001) Ni (001) Au .. , .. . .. , , , (001) Ni (001) Au, . , ­ , /1/, E . "" "" , . "" . "" . "" , , , . , , , , , , /1/. 1 .., .., .., .. // , 1997, 2, c. 77-92. LiF/ Si(111) .. , . , .. , .. , .. , , F- - LiF/Si(111) 80. : (in situ) (post) . post F- Van, Li4, F2 , F2, F3, -. post F 2-, Li4, F2 - . F2 -, F2-. Li4 F2 -, , ( 1013/2). in situ F2 , F3+, F3, F-. , . . in situ ( ) . , ( ), F - , , . , , . , Li4 F3+, F2+. - SiC Cs+ .. , . , .. , .. , .. , , . - - , - SiC Cs+. . , - SiC . , , . , - . , , 0,1-3,0 . , , .


Cs+ , ,



SiC . .

.. , .. , . , .. , , , , - (., 1984). (1950) . , «» , , , . N S(N). n p :

S (n, p)

2

3 (n p) 2

M nm 8
3

3 p2

np



3np

E nE a pE 3 (n p) 2

e

3 (n p) 1 2

­ , Ea Ee ­ , M m ­ , (..) ­ -. n p :

W ( n, p )

S ( n, p )
n, p

S ( n, p )

:

n
n, p

nW (n, p) p
n, p

pW (n, p) .

, , . - .. , .. .. , , . , ( - ). - (, 2, ZrO) . - , (.1) 10 ­50 , Me-O, Me-OH, 2.





.1. - « ­ » 110. ­ - 23 , ­ , 0,20â0,04 ­ 5,12â0,26


Ar+ .. , .. , .. , .. , .. , , , , , - () , - () /1/. ( ) Ar+ (, ) . 110 500 ( 9,15). 1 , . (350 , 16,5 ) 1000, 2000 3000 . , 1,2 ­ 1,8 0,3­0,5 , 0,3. , , , , . . x(t) - 0,0004 /, ( ), 0,0002 / 0,00015 / . .. // -2000. .303. .2. .46-58. Ti, Fe, Cu, Mo W He+ Ar+ .. , , , ( ) . ( ), - . , Ti, Fe, Cu, Mo, W (H+, He+ Ar+) ( =10 ) =20-70. , (+, +) Be W , . ( 500 ) , He+, Ar+ . H+, He+ + Ar Sp( ) ( E), :
Sp( ) Sp( 0) ao cos
n1

exp a1

E E

n2

1 cos

n3

n3

,

ao, a1 ­ , ; n1, n2, n3 ­ , ; E ­ , ­ .