Nanoelectronics

Currently our group is working atљexperimentalљstudying of nanoelectronic devices based on silicon, mostlyљsilicon nanowires and single-electron transistors. љEveryone who comes to work in our group learns with their own hands the same љtechnological methods as usedљfor creating љmodern silicon chips.љ

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Suspended single-electron transistor made up from highly doped silicon on insulator (Laboratory of Cryoelectronics 2012)љ

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Single elextron memory cell. A controllable transfer of a single electronљ(Laboratory of Cryoelectronics 1997)

  • Vladimir A. Krupenin

    Vladimir A. Krupenin

    Senior researcher

    ISTINA
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    P: +7 (495) 939-39-87
  • Denis E. Presnov

    Denis E. Presnov

    Senior researcher

    ISTINA
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    P: +7 (495) 939-39-87
    P2: +7 (495) 939-39-88
    F: +7 (495) 939-30-00
  • Ivan V. Bozhjev

    Ivan V. Bozhjev

    Student
    ERC "Nanosystems and Nanodevices"

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    P: +7 (903) 587-23-79