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: http://num-meth.srcc.msu.ru/english/zhurnal/tom_2001/art1_7.html
Дата изменения: Mon Dec 16 17:34:36 2002 Дата индексирования: Mon Oct 1 22:34:37 2012 Кодировка: |
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"Numerical simulation for the problem of dynamics of oxide film growth in
semiconductor substrates on the basis of geometrical approach and the
Deal-Grove method" A.L. Alexandrov , G.A. Tarnavsky, S.I. Shpak, A.I. Gulidov, and M.S. Obrecht |
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An approximate simulation for the dynamics of oxide film growth in semiconductor substrates is developed. A generalization of the 1D Deal-Grove method to 2D problems is proposed on the basis of geometrical approach. Some numerical results are given for the following cases: 1) the growth of a subregion for SiO2 under oxidation in various mediums (O2 or H2O) and 2) the dynamics of oxide/material and oxide/oxidant boundaries in a wide range of constitutive parameters and nitride masks covering a part of the silicon surface. |