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Дата изменения: Mon Dec 16 17:34:35 2002 Дата индексирования: Mon Oct 1 22:34:27 2012 Кодировка: |
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"Numerical modeling and computer algorithm for the process of segregation of
alloy impurities at the boundary of an oxidation wave in semiconductor
substrates" G.A. Tarnavsky, S.I. Shpak, and M.S. Obrecht |
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An approach to the approximate modeling of complex physico-chemical processes of segregation of alloy impurities implanted in a base material is considered for the case when an oxidation wave propagates along it. A computer algorithm that realizes this approach is given. Numerical results obtained for the segregation of boron, arsenic, phosphorus, and antimony in silicon at the boundary "silicon/silicon dioxide" are discussed. |