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, , , E-mail:buka17@list.ru Modern tendencies in microelectronics demand creation of qualitative films of nanometer thickness, requirements to uniformity and smoothness of a surface of received structures constantly rise. The ZnO: N and ZnO: P thin films samples series have been produced by the pulse laser deposition method from ceramic targets. Zn3N2, MgO and Zn3P2 were entered in the ZnO ceramic targets for the p-type ZnO films fabrication. As buffer gas were used O2 and N2O. The thermal annealing of the ZnO films have been lead. The resistance and the ZnO films photoluminescence spectra before and after annealing have been measured. The dependence of the amplitude and the ZnO films photoluminescence peak position before and after annealing from the N and P films doping level has been established.

, II VI, , , . ZnO , [1, 2]. ZnO n-, p- . ZnO n- . p- [3]. , ZnO n- [4]. ZnO, . ZnO . p- ZnO:(Ga,N) GaN ­ 1 . %, ZnO:N N:O ­ 10 . % ZnO:(Mg,P) Mg ­ 10 . %, ­ 0,05 1 . %. , , N2O, 2. .


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1. D.C. Look, B. Claflin, Ya.I. Alivov, S.J. Park. Phys. Status Solidi A, 201, 2203 (2004). 2. U. Ozgur, Ya.I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Dogan, V. Avrutin, S.-J. Cho, H. Marko. J. Appl. Phys. 98, 041301(2005). 3. D.C. Look, R.L. Jones, J.R. Sizelove, N.Y. Garces, N.C. Giles, L.E. Halliburton. Phys. Status Solidi A, 195, 171 (2003). 4. S.B. Zang, S.-H. Wei, A. Zunger. Phys. Rev. B, 63, 075205 (2001).