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, . , E-mail:goga_107@list.ru The production of n- and p- type high-quality film structures presents a foreground task in tackling the problem of growing the light-emitting -n junctions on the basis of zinc oxide. The ZnO: N and ZnO: P thin films samples series have been produced by the pulse laser deposition method. The photoluminescence (PL) characteristics of the films have researched at the optical continuous excitation (325 nm, He-Cd laser). The PL spectra in area 300 ­ 700 nm were registered by Ocean Optics HR4000 spectrometer in the temperatures range from 10 to 400. The influence of the film deposition conditions on the PL spectr has been studied. The influence of the ZnO films N and P doping level on the intensity of the films PL spectra and the position of PL bandes in the UV region have investigated. The absorption spectra of ZnO: N and ZnO: P films in short-wave area (250-400 nm) have been measured. The influence of the N and P doping level on the ZnO films band-gap width has been investigated.

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1. S. Nakamura, G. Fasol. The Blue Laser Diode (Berlin, Springer, 1997). 2. H.W. Liang, Y.M. Lu, D.Z. Shen, Y.C. Liu, J.F. Yan, C.X. Shan, B.H. Li, Z.Z. Zhang, J.Y. Zhang, X.W. Fan. Phys. Status Solidi A, 202, 1060 (2005). 3. V. Vaithianathan, Y.H. Lee, B.-T. Lee, S. Hishita, S.S. Kim. J. Cryst. Growth, 287, 85 (2006). 4.H. Tampo, H. Shibata, P. Fons, A. Yamada, K. Matsubara, K. Iwata, K. Tamura, H. Takasu, S. Niki. J. Cryst. Growth, 278, 268 (2005). 5. T. Yamamoto, H. Katayama-Yoshida. Jpn. J. Appl. Phys., 38, L166 (1999). 6. T. Yamamoto, H. Katayama-Yoshida. Physica B, 302-303, 155 (2001). 7. A. Allenic, X.Q. Pan, Y. Che, Z.D. Hu, B. Liu. Appl. Phys. Lett., 92, 022107 (2008).