Документ взят из кэша поисковой машины. Адрес оригинального документа : http://nuclphys.sinp.msu.ru/school/s08/s08_25.pdf Дата изменения: Mon Nov 17 19:40:30 2008 Дата индексирования: Tue Oct 2 00:30:58 2012 Кодировка:

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The influence of the thermal annealing on surface morphology of the N-doped ZnO thin film created by pulse laser deposition method have been investigated. The thermal annealing was performed during 30 minutes at temperatures from 300 0C up to 1000 0C with interval 50 0C at the atmospheric pressure in the oxygen atmosphere, nitrogen atmosphere and on air. The surface morphology analysis of the thin film was performed by the atomic-force microscopy method. The roughness increase from 2 nm up to 8 nm in the range of the annealing temperatures from 300 0C up to 900 0C and the roughness sharp increase after the annealing at temperature more than 900 0C were observed.

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1. H.Kim, A.Cepler, M.S.Osofsky, R..Y.Auyeung, and A.Pique. Fabrication of Zr-N codoped p-type ZnO thin films by pulsed laser deposition, Appl. Phys. Lett, 90, 203508 (2007). 2. B.T.Adekore, J.M.Pierce, and R.F.Davis, D.W.Barlage and J.F.Muth. Nitrogen acceptors in bulk ZnO (0001) substrates and homoepitaxial ZnO films, J. of Appl. Phys., 102, 024908 (2007).