Документ взят из кэша поисковой машины. Адрес оригинального документа : http://nuclphys.sinp.msu.ru/school/s08/s08_24.pdf Дата изменения: Mon Nov 17 19:40:26 2008 Дата индексирования: Tue Oct 2 00:30:57 2012 Кодировка: Mac-cyrillic

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, . , E-mail:goga_107@list.ru The series of the ZnO films samples doped by nitrogen and co-doped by gallium and nitrogen thin have been produced by the pulse laser deposition method. The photoluminescence haracteristics of the ZnO films have researched at the optical continuous excitation (the He-Cd laser). The influence of the ZnO films doping by nitrogen level on the intensity of the films photoluminescence (PL) spectra and the position of PL bandes in the UV region have investigated.

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1. B. T. Adekore, J. M. Pierce, and R. F. Davis D. W. Barlage and J. F. Muth Nitrogen acceptors in bulk ZnO (0001) substrates and homoepitaxial ZnO films, J. of Appl. Phys., 102, 024908 (2007). 2. Z. P. Wei,Y. M. Lu, D. Z. Shen, Z. Z. Zhang, B. Yao, B. H. Li, J. Y. Zhang, D. X. Zhao, and X. W. Fan, Z. K. Tang Room temperature p-n ZnO blue-violet light-emitting diodes, Appl. Phys. Lett, 90. 042113 (2007). 3. H. Kim, A. Cepler, M. S. Osofsky, R. Y. Auyeung, and A. Pique Fabrication of Zr-N codoped p-type ZnO thin films by pulsed laser deposition, Appl. Phys. Lett, 90, 203508 (2007). 1. 4.Kumar, T.-H. Kim, S.-S. Kim, and B.-T. Lee, Growth of epitaxial p-type ZnO thin films by codoping of Ga and N, Appl. Phys. Lett, v. 89.112103 (2006). 2. 5.G. D. Yuan, Z. Z. Ye, L. P. Zhu, Q. Qian, B. H. Zhao, R. X. Fan. L. 3. Perkins, and S. B. Zhang, Control of conduction type in Al- and N-codoped ZnO thin films Appl. Phys. Lett. 86, 202106 (2005). 1. L. L. Chen, J. G. Lu, Z. Z. Ye, Y. M. Lin, B. H. Zhao. Y. M. Ye. J. S. Li. 4. and L. P. Zhu, p-type behavior in In?N codoped ZnO thin films, Appl. Phys. Lett. 87, 252106 (2005).