Composite materials for semiconductor-polymer flexible devices electronic engineering

     
    The project aims to develop methods for the synthesis of vanadium dioxide films with low temperature phase transition metal-semiconductor junction, which is necessary for the development of flexible electronics devices, new types of sensors, optoelectronic converters, volatile memory elements with the possibility of a superdense recording information. Lowering the temperature of the phase transition is carried out using a doping with manganese dioxide, vanadium and chromium. The films obtained by deposition of a sol-gel method from a methanol solution of vanadyl acetylacetonate and acetylacetonates of alloying metals ( Cr, Mn) on various substrates (silicon, Kapton , glass ceramics) with subsequent heat treatment layers. The dependence of the composition, structure, electrical and optical properties of functional VO₂ films on the preparation conditions to elucidate the mechanism of doping by thermogravimetric analysis (TGA ) , rentennograficheski ( XRD ), IR spectroscopy, including using Fourier studied the thermal stability (thermolysis) vanadyl acetylacetonate. Found that the thermolysis of vanadyl acetylacetonate consists of sequential destruction of chemical bonds in the acetylacetonate ligands soproportsionirovaniya emerging vanadium oxides varying degrees of oxidation with the formation of vanadium dioxide. Activation decomposition reactions light provides additional opportunities reaction control materials. By IR spectroscopy studied the thermal stability of vanadyl acetylacetonate under UV ( mercury lamp ) and laser irradiation (wavelength 355 nm, pulse energy and time 8ns and 13.3 mJ , respectively). For manganese and chromium acetylacetonates composition set solid and gaseous products of pyrolysis. The temperature dependence of the resistance and the switching effect in the resulting vanadium dioxide films . The influence of deposition conditions on the parameters of the resistive films switching and phase transition metal-semiconductor. On the basis of vanadium dioxide created sandwich structure Au-VO₂-SiO₂-Si (p-type) on the effects of electrical switching with memory. Determined that the switching mechanism is described in the model of the electronic control metal-insulator transition. To calculate the electronic structure and determine the nature of the phase transition VO₂ quantum chemistry methods mastered Hubbard model taking into account the correlation of localized d- or f-electrons.
     KEYWORDS
inorganic chemistry , the reactivity of inorganic compounds , coordination compounds, transition metal oxides film.