Andrei G. Kazanskii

Leading Scientist (b. 1946)
Graduated from Moscow State University (1970). Ph.D. in Physics (1973), Dr.Sci. (1993)

Scientific interests:

Physics of amorphous hydrogenated semiconductors with emphasis on nonequilibrium photoelectronic processes, light-induced metastable states. Photoelectric phenomena and metastability in amorphous semiconductors.

Recent publications:

• A.G. Kazanskii. Staebler-Wronski effect in amorphous hydrogenated p-type silicon films. Moscow University Physics Bulletin 47, 65 (1992).

• A.G. Kazanskii and D.G. Yarkin. Influence of the dopant concentration and temperature on the Staebler-Wronski effect in phosphorus-doped a-Si:H films. Semiconductors 27, 935 (1993).

• A.G. Kazanskii, Mao Yi and Kong Guanglin. On the dangling-bong relaxation problem in hydrogenated amorphous silicon. Solid State Commun. 91, 447 (1994).

• A.G. Kazanskii, I.A. Kurova, I.P. Zvyagin and D.G. Yarkin. Non-monotone kinetics of persistent photoconductivity in compensated a-Si:H films. J. Non-Cryst. Solids 198-200, 470 (1996).

• A.G. Kazanskii, I.A. Kurova, N.N. Ormont, I.P. Zvyagin. Anomalous relaxation of light-induced states of a-Si:H films. J. Non-Cryst. Solids 227-230, 306 (1998).

• Forsh P.A., Kazanskii A.G., Mell H., Terukov E.I. Photoelectrical properties of microcrystalline silicon films. Thin Solid Films 383, 251 (2001).

• Kazanskii A.G., Mell H., Weiser G., Terukov E.I. Donor formation in plasma-deposited amorphous silicon (a-Si:H) by erbium incorporation. J. Non-Cryst. Solids 299-302, Pt. 1, p. 704-708 (2002).
• M.V. Chukichev, P.A. Forsh, W. Fuhs, A.G. Kazanskii. Creation of metastable defects in microcrystalline silicon films by keV-electron irradiation. J. Non-Cryst. Solids, v. 338-340, p. 378-381 (2004).
• A.G. Kazanskii, K.Yu. Khabarova, E.I. Terukov. Modulated photoconductivity method for investigation of band gap state distribution in silicon-based thin films. J. Non-Cryst. Solids, v. 352, p. 1176-1179 (2006).
• M.R. Esmaeili-Rad, A. Sazonov, A.G. Kazanskii, A.A. Khomich, N. Nathan. Optical properties of nanocrystalline silicon deposited by PECVD. J. Mater. Sci.: Mater. in Electronics, v. 18, Suppl. 1. p. S405-S409 (2007).
• A.G. Kazanskii, G. Kong, X. Zeng, H. Hao, F. Liu. Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure. J. Non-Cryst. Solids, v. 354, p. 2282-2285 (2008).
• A.G. Kazanskii, G. Kong, X. Zeng, H. Hao. Effect of light soaking on CPM absorption spectra in silicon films with mixed amorphous-nanocrystalline structure. Phys. Status Solidi C, v. 7, p. 666 (2010).