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Дата индексирования: Sun Dec 23 09:12:51 2007
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Поисковые слова: п п п п п п п п п п п
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Highly Efficient GaN p-i-n Photodiodes

 

 

 

  • • Previous work has indicated that the minority carrier diffusion length (of holes) in n-GaN is ~1000 е.
  • • Too thick a p-type region, we increase the chance for recombination in this layer.
  • • Too thin a p-type region will result in a lack of p-n junction altogether, thereby reducing quantum efficiency.

Spectral Responsivity

 

Razeghi et al., APL 72, 3303 (1998).
  • • Responsivity of 0.20 A/W at 362 nm (0 V)
  • • Corresponding external quantum efficiency of 68.5% and internal quantum efficiency of 86%
  • • High efficiency over the entire deep UV spectral range, with sharp cutoff (105)