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The image-sensing area of the TC237 is configured into 500 lines with 680 elements in each line. Twenty-two elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on an advanced lateral-overflow-drain concept. The sensor can be operated in a true-interlace mode as a 658(H) × 496(V) sensor with a very low dark current. One important feature of the TC237 very high-resolution sensor is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image-transfer capability. This capability allows for a continuous electronic exposure control without the loss of sensitivity and resolution inherent in other technologies. The charge is converted to signal voltage at 20 uV per electron by a high-performance structure with a reset and a voltage-reference generator. The signal is further buffered by a low-noise, two-stage, source-follower amplifier to provide high output-drive capability.

The TC237 is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. The TC237 is characterized for operation from -10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to V_SS. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to V_SS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

• Very High-Resolution, 1/3-in Solid-State Image Sensor for NTSC Black and White Applications
• 340,000 Pixels per Field
• Frame Memory
• 658 (H) × 496 (V) Active Elements in Image Sensing Area Compatible With Electronic Centerin
• Multimode Readout Capability
• Progressive Scan
• Interlaced Scan
• Dual-Line Readout
• Image-Area Line Summing
• Smear Subtraction
• Fast Single-Pulse Clear Capability
• Continuous Electronic Exposure Control From 1/60 - 1/50,000 s
• 7.4-um Square Pixels
• Advanced Lateral-Overflow-Drain Antiblooming
• Low Dark Current
• High Dynamic Range
• High Sensitivity
• High Blue Response
• Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics