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Дата изменения: Thu Apr 29 02:46:06 1999
Дата индексирования: Tue Oct 2 00:17:15 2012
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Product Folder: TC237, 680- X 500-PIXEL CCD IMAGE SENSOR DATA SHEET

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TC237, 680- X 500-PIXEL CCD IMAGE SENSOR DATA SHEET
Device Status: Active


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Description

The TC237 is a frame-transfer, charge-coupled device (CCD) image sensor designed for use in single-chip black and white NTSC TV, computer, and special-purpose applications requiring low cost and small size.

The image-sensing area of the TC237 is configured into 500 lines with 680 elements in each line. Twenty-two elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on an advanced lateral-overflow-drain concept. The sensor can be operated in a true-interlace mode as a 658(H) × 496(V) sensor with a very low dark current. One important feature of the TC237 very high-resolution sensor is the ability to capture a full 340,000 pixels per field. The image sensor also provides high-speed image-transfer capability. This capability allows for a continuous electronic exposure control without the loss of sensitivity and resolution inherent in other technologies. The charge is converted to signal voltage at 20 uV per electron by a high-performance structure with a reset and a voltage-reference generator. The signal is further buffered by a low-noise, two-stage, source-follower amplifier to provide high output-drive capability.

The TC237 is built using TI-proprietary advanced virtual-phase (AVP) technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. The TC237 is characterized for operation from -10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

Features

  • Very High-Resolution, 1/3-in Solid-State Image Sensor for NTSC Black and White Applications
  • 340,000 Pixels per Field
  • Frame Memory
  • 658 (H) × 496 (V) Active Elements in Image Sensing Area Compatible With Electronic Centerin
  • Multimode Readout Capability
    • Progressive Scan
    • Interlaced Scan
    • Dual-Line Readout
    • Image-Area Line Summing
    • Smear Subtraction
  • Fast Single-Pulse Clear Capability
  • Continuous Electronic Exposure Control From 1/60 - 1/50,000 s
  • 7.4-um Square Pixels
  • Advanced Lateral-Overflow-Drain Antiblooming
  • Low Dark Current
  • High Dynamic Range
  • High Sensitivity
  • High Blue Response
  • Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics

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Datasheets

Full datasheet in Acrobat PDF: socs044b.pdf (191 KB)
Full datasheet in Zipped PostScript: socs044b.psz (185 KB)

Pricing/Availability/Samples

Orderable Device Package Pin Temp Status Price (USD) Quantity Availability / Samples
TC237   12   ACTIVE 75.29 1 Check stock or order
TC237H   12   ACTIVE 75.29 1 Check stock or order

680- X 500-PIXEL CCD IMAGE SENSOR DATA SHEET ERRATA FOR SOCS044 (40 KB)

Application Reports

CCD IMAGE SENSORS AND ANALOG-TO-DIGITAL CONVERSION (63 KB) (Abstract)
INTERLACE OPERATION IN TI VIRTUAL-PHASE CCD IMAGE SENSORS (29 KB) (Abstract)
TIMING OF TC237 FRAME TRANSFER CCD IMAGE SENSORS (97 KB) (Abstract)


Last Updated on : 4/28/99

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