Документ взят из кэша поисковой машины. Адрес оригинального документа : http://www.sao.ru/drabek/CCDP/ti/tc210.html
Дата изменения: Thu Apr 29 02:41:18 1999
Дата индексирования: Tue Oct 2 00:16:41 2012
Кодировка:

Поисковые слова: п п п п п п п п р п р п р п р п р п р п р п р п р п р п р п
Product Folder: TC210, 192- X 165-PIXEL CCD IMAGE SENSOR

Texas InstrumentsSemiconductors
SearchTech SupportCommentsSite MapTI&MEHome
ProductsDevelopment ToolsApplications
Products

>> Semiconductor Home > Products > Mixed Signal and Analog > CCD IMAGERS Family >

TC210, 192- X 165-PIXEL CCD IMAGE SENSOR
Device Status: Active


> Description
> Features
> Datasheets
> Application Notes

> Development Tools
> Applications

  

Description

The TC210 is a full-frame charge-coupled device (CCD) image sensor designed specifically for medical and industrial applications requiring ruggedness and small size. The image-sensing area is configured into 165 horizontal lines each containing 192 pixels. Twelve additional pixels are provided at the end of each line to establish a dark reference and line clamp. The antiblooming feature is activated by supplying clock pulses to the antiblooming gate, an integral part of each image-sensing element. The charge is converted to signal voltage at 4 uV per electron by a high-performance structure with built-in automatic reset and a voltage-reference generator. The signal is further buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.

The TC210 is supplied in a 5-mm (0.20-in) diameter ceramic and clear plastic molded package with a glass window. The glass window can be cleaned using any standard method for cleaning optical assemblies or by wiping the surface with a cotton swab soaked in alcohol.

The TC210 is characterized for operation from -10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.

Features

  • Full-Frame Operation
  • Antiblooming Capability
  • Single-Phase Clocking for Horizontal and Vertical Transfers
  • Fast Clear Capability
  • Dynamic Range . . . 60 dB Typical
  • High Blue Response
  • High Photoresponse Uniformity
  • Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics
  • 6-Pin Dual-In-Line Ceramic Package
  • Square Image Area:
    • 2640 um by 2640 um
    • 192 Pixels (H) by 165 Pixels (V)
    • Each Pixel 13.75 um (H) by 16 um (V)

To view the following documents, Acrobat Reader 3.x is required.
To download a document to your hard drive, right-click on the link and choose "Save".

Datasheets

Full datasheet in Acrobat PDF: socs009b.pdf (191 KB)
Full datasheet in Zipped PostScript: socs009b.psz (183 KB)

Application Reports

CCD IMAGE SENSORS AND ANALOG-TO-DIGITAL CONVERSION (63 KB) (Abstract)
INTERLACE OPERATION IN TI VIRTUAL-PHASE CCD IMAGE SENSORS (29 KB) (Abstract)


Last Updated on : 4/28/99

SearchTech SupportCommentsSite MapTI&MEHome

(c) Copyright 1999 Texas Instruments Incorporated. All rights reserved.
Trademarks, Important Notice, Privacy Policy, Frequently Asked Questions