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Дата изменения: Sat Jan 9 03:36:34 1999 Дата индексирования: Tue Oct 2 11:28:36 2012 Кодировка: Поисковые слова: ccd |
Direct X-ray imaging model
This camera system is designed for directmeasurement
of X-rays. Four types of CCD elements are available for selection. In ordinary
imaging of X-rays, an instrument such as a scintillator is used,and the
X-rays are converted to visible light before imaging is dine withthe CCD.
Because the CCD is made of silicon, however, the inherent characteristicsof
the CCD itself enable direct imaging of X-rays. For instance, a characteristics.X-ray
of 5.9 KeV is emitted from the F55 of radioactive isotope. This X-rayproduces
approximetry 1,620 electrons in silicon. For this reason, CCD scan be used
as X-ray sensors with extremely high sensitivity.
When imaging X-rays, the CCD must be selected based on the incident energy.
Particularly if the incident energy is 1 to 2 KeV or less, it is necessaryto
use a back-thinned illuminated CCD. With ordinary CCDs, poly silicongate
are mounted on side of the CCD on which the incident light falls. totransport
charges , so the X-rays is absorbed by these electrodes and detectionis
less efficient.
back-thinned illuminated CCDs, which have no electrodes on the incidentsurface,
can be used effstively in such applications.
TYPES OF CAMERA HEADS
Two types of camera heads are availabel: a beryllium
window typewhich presupposes imaging under atmospheric conditions, and
a head to vaccum
chanber is copupled.
MAIN APPLICATIONS
X-ray
microscopy
X-ray
telescopy
X-ray
spectroscope scanning
CAMERAS CONFIGRATION
For
detection range from 4 KeV to several tens KeV
For
detection range from several hundreds of eV to 3 KeV
APPLICABLE CCDs
S5466:
24mm/512x 512
TC-215:12mm/1000
x 1018
SI502A:24mm/512
x 512/Back-thinned illuminated
SI003A:24mm/1024
x 1024 Back-thinned illuminated
If you have comments or are requesting any information, please contactexport@sys.hpk.co.jp(X-rayDirect
detect CCD)
Information furnished by HAMAMATSU is believed to
bereliable. However, no responsibility is assumed for possible inaccuraciesor
omissions.
Specifications and external appearance are subjectto
change without notice. Please reload the latestversion.
Copyright 1997 Hamamatsu Photonics K.K.
Created in February 1997