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Дата изменения: Sat Jan 9 03:36:34 1999
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Поисковые слова: ccd
Direct X-ray imaging model


Direct X-ray imaging model


This camera system is designed for directmeasurement of X-rays. Four types of CCD elements are available for selection. In ordinary imaging of X-rays, an instrument such as a scintillator is used,and the X-rays are converted to visible light before imaging is dine withthe CCD. Because the CCD is made of silicon, however, the inherent characteristicsof the CCD itself enable direct imaging of X-rays. For instance, a characteristics.X-ray of 5.9 KeV is emitted from the F55 of radioactive isotope. This X-rayproduces approximetry 1,620 electrons in silicon. For this reason, CCD scan be used as X-ray sensors with extremely high sensitivity.
When imaging X-rays, the CCD must be selected based on the incident energy. Particularly if the incident energy is 1 to 2 KeV or less, it is necessaryto use a back-thinned illuminated CCD. With ordinary CCDs, poly silicongate are mounted on side of the CCD on which the incident light falls. totransport charges , so the X-rays is absorbed by these electrodes and detectionis less efficient.
back-thinned illuminated CCDs, which have no electrodes on the incidentsurface, can be used effstively in such applications.

TYPES OF CAMERA HEADS
Two types of camera heads are availabel: a beryllium window typewhich presupposes imaging under atmospheric conditions, and a head to vaccum
chanber is copupled.

MAIN APPLICATIONS
X-ray microscopy
X-ray telescopy
X-ray spectroscope scanning

CAMERAS CONFIGRATION
For detection range from 4 KeV to several tens KeV

For detection range from several hundreds of eV to 3 KeV


APPLICABLE CCDs
S5466: 24mm/512x 512
TC-215:12mm/1000 x 1018
SI502A:24mm/512 x 512/Back-thinned illuminated
SI003A:24mm/1024 x 1024 Back-thinned illuminated


If you have comments or are requesting any information, please contactexport@sys.hpk.co.jp(X-rayDirect detect CCD)
Information furnished by HAMAMATSU is believed to bereliable. However, no responsibility is assumed for possible inaccuraciesor omissions.
Specifications and external appearance are subjectto change without notice. Please reload the latestversion.

Copyright 1997 Hamamatsu Photonics K.K.
Created in February 1997

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