Medal on 8th European SOFC Forum. Award for best poster presentation.

Tereshchenko Alexey Nikolaevich

E-mail: tan@issp.ac.ru phone: 2-83-44 Working in:116 ГЛК Position:scientist Work in LSDS since: 2004-01-19 Scientific degree:PhD

Selected publications

2014

1. С.А. Шевченко, А.Н. Терещенко, А.А. Мазилкин 'Взаимодействие многозарядных примесей с дислокациями в монокристаллах германи' Известия высших учебных заведений. Материалы электронной техники, т.17, ?3,с. 211-216 (2014)

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2010

1. S. Shevchenko, A. Tereshchenko 'Dislocation states and deformation-induced point defects in plastically deformed germanium' Solid State Phenomena, 156-158, 289 (2010)

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2009

1. S.A. Shevchenko, A.N. Tereshchenko 'Dislocation photoluminescence in plastically deformed germanium' Physica B: Condensed Matter, 404, 4540 (2009)

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2008

1. S. Shevchenko and A. Tereshchenko 'Dislocation photoluminescence in silicon and germanium' Solid State Phenomena, 131-133, 583 (2008)
2. E.A. Steinman, A.N. Tereshchenko, N.V. Abrosimov 'The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon' Solid State Phenomena, Vols.131-133 (2008) pp.607-612 (2008)
3. A.N. Tereshchenko, E.A.Steinman 'Pecularities of dislocation related D1/D2 bands behavior under copper contamination in silicon' Solid State Phenomena, Vols.131-133 (2008) pp.213-218 (2008)
4. Steinman E.A., A.J. Kenyon, A.N. Tereshchenko 'Time-resolved measurements of dislocation-related photoluminescence bands in silicon' Semicond. Sci. Technol, 23, 025010 (2008)

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2007

1. S.A. Shevchenko and A.N. Tereshchenko 'Photoluminescence in germanium with a quasi-equilibrium dislocation structure' Physics of the Solid State, 49, No.1, 28-33 (2007)
2. S.A. Shevchenko and A.N. Tereshchenko 'Peculiarities of dislocation photoluminescence in germanium with quasi-equilibrium dislocation structure' Phys.stat.sol.(c), 4, 2898-2902 (2007)
3. E.A. Steinman, A.N.Tereshchenko, V.Ya.Reznik, R.J.Falster 'The radiative properties of dislocations generated around oxygen precipitates in Si' pss (a),, 204, No.7, 2238 (2007)
4. E.A. Steinman, A.N.Tereshchenko 'Influence of Cu contamination on dislocation related luminescence' pss (c),, No.8, 3095 (2007)
5. О.В. Феклисова, А.Н. Терещенко, Э.А. Штейнман, Е.Б. Якимов 'Исследования электрических и оптических свойств кремния, содержащего кислородные преципитаты' Повехность, Рентгеновские, синхротронные и нейтронные исследования,, ?7, с.38-41 (2007)
6. E.A.Shteinman, A.N.Tereshchenko, V.Ya.Reznik 'Structure and radiation properties of dislocations arising during oxygen precipitates growth in silicon' J.of Surface Investigations. X-ray, Synchrotron and Neutron Techniques, Vol. 1, No. 3, pp. 318-322 (2007)

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2005

1. E.A. Steinman, A.N. Tereshchenko, V.I. Orlov, and F. Kirscht 'Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon' Solid State Phenomena, Vols. 108-109 pp. 767-772 (2005)
2. E.A. Steinman, A.N. Tereshchenko, V.I. Vdovin, A.Misiuk 'DISLOCATION RELATED PL OF MULTI-STEP ANNEALED CZ-SI SAMPLES' Solid State Phenomena, v. 108-109, pp.773-778 (2005)

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