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Laboratory of spectroscopy of defect structures ISSP RAS
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LSDS ISSP RAS
Time of flight SIMS
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Shevchenko Svetlana Antonovna

E-mail: shevchen@issp.ac.ru

phone: 2-83-43

Working in:224 ГЛК

Position:senior scientist

Work in LSDS since: 1965-05-05

Scientific degree:Dr.S.

Shevchenko Svetlana Antonovna

Scientific Biography

Svetlana Antonovna Shevchenko was born in Dnepropetrovsk, Ukrainian Soviet Socialist Republic 12 of December, 1938.
1956 -1962 - Student of the Physics Department of Moscow Lomonosov State University, Moscow, Russia
1962 - Graduation from the Physics Department of Moscow Lomonosov State University, Moscow, Russia
1962 -1965 - Post-graduate in Lebedev Physical Institute of Academy of Sciences of the USSR
1965 -1980 - Junior Scientist in the Institute of Solid State Physics of the Russian Academy of Science
In 1967 she awarded the degree "Candidate of physical and mathematical sciences" (Ph.D)
1980 - present - Senior Scientist in the Institute of Solid State Physics of the Russian Academy of Science
In 2004 she awarded the degree "Doctor of physical and mathematical sciences" (Doctor of Science).

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Scientific intersts

 Influence of dislocations on electronic subsystem in Semiconductors.
 Electric conductivity along both isolated dislocations and dislocation networks in Semiconductors.
 Thermal and deformation induced point defects in Semiconductors.
 Reseach methods: electrical conductivity, Hall effect, photoconductivity, photoluminescence and deep level transient spectroscopy.

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Selected publications

2014

  1. С.А. Шевченко, А.Н. Терещенко, А.А. Мазилкин 'Взаимодействие многозарядных примесей с дислокациями в монокристаллах германи' Известия высших учебных заведений. Материалы электронной техники, т.17, ?3,с. 211-216 (2014)

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2013

  1. С.А. Шевченко, А.И. Колюбакин 'Исследование методом DLTS пластически деформированного германия n-типа после легирования медью' Физика и Техника Полупроводников, т. 47, ?6, с. 838-844 (2013)
  2. S.A. Shevchenko and A.I. Kolyubakin 'DLTS Study of Plastically Deformed Copper-Doped n-Type Germanium' Semiconductors, Vol. 47, No. 6, pp. 849-855 (2013)

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2010

  1. S. Shevchenko, A. Tereshchenko 'Dislocation states and deformation-induced point defects in plastically deformed germanium' Solid State Phenomena, 156-158, 289 (2010)

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2009

  1. S.A. Shevchenko, A.N. Tereshchenko 'Dislocation photoluminescence in plastically deformed germanium' Physica B: Condensed Matter, 404, 4540 (2009)

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2008

  1. S. Shevchenko and A. Tereshchenko 'Dislocation photoluminescence in silicon and germanium' Solid State Phenomena, 131-133, 583 (2008)

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2007

  1. S.A. Shevchenko and A.N. Tereshchenko 'Photoluminescence in germanium with a quasi-equilibrium dislocation structure' Physics of the Solid State, 49, No.1, 28-33 (2007)
  2. S.A. Shevchenko and A.N. Tereshchenko 'Peculiarities of dislocation photoluminescence in germanium with quasi-equilibrium dislocation structure' Phys.stat.sol.(c), 4, 2898-2902 (2007)

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2005

  1. S.A. Shevchenko and A. N. Izotov 'Dislocation photoluminescence in silicon crystals of various impurity contents' Phys. Stat. Sol. (c), 2, No. 6, 1827 (2005)

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2003

  1. S.A. Shevchenko and A. N. Izotov 'Dislocation-induced photoluminescence in silicon crystals of various impurity composition' Physics of the Solid State, 45, No. 2, 259-265 (2003)

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2002

  1. A.P. Mel'nikov, Yu.A. Gurvich, S.A. Shevchenko, L.N. Shestakov and L. I. Men'shikov 'New mechanism of impurity conduction in lightly doped crystalline noncompensated silicon' JETP Letters, 75, No. 3, 155-158 (2002)

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2000

  1. S.A. Shevchenko 'Influence of annealing on dislocation-related electrical conductivity of germanium' Semiconductors, 34, No. 5, 527-533 (2000)

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1999

  1. S.A.Shevchenko 'Electroconductivity of germanium with dislocation grids' Zh.Eksp.Teor.Phys.( JETP), 115, N1, p.115 (1999)

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1997

  1. V.G.Abramov, E.N.Rumanov, D.V.Strunin, S.A.Shevchenko 'Current fluctuations similar the critical opalescence' Dokladi Academii Nauk, 353, 177 (1997)

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1995

  1. V.V.Kveder, E.A.Steinman, S.A.Shevchenko, H.G.Grimmeiss 'Dislocation related electroluminescence at room temperature in plastically deformed silicon' Phys.Rev. B, 51(16), 10520-10526 (1995)
  2. V.Sedykh, G.K.Strukova, R.A.Dilanyan, I.S.Smirnova, S.A.Shevchenko, V.Sh.Shekhtman 'A study of the new compound Y4Ba3FeO11-y' Applied Physics A, 60, 255 (1995)
  3. S.A.Shevchenko and A.N.Izotov 'Structure of the photoluminescence spectra in the vicinity of the lines D1 and D2 in plastically deformed Si' Phys.Stat.Sol.(a), 148, K1 (1995)

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1994

  1. S.A.Shevchenko, Yu.A.Ossipyan T.R.Mchedlidze E.A.Steinman, R.A.Batto 'Defect states in Si containing dislocation nets' Physica Status Solidi (a), v.146, 745 (1994)

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1992

  1. A.N.Izotov, A.I.Kolyubakin, S.A.Shevchenko, E.A.Steinman 'Photoluminescence and splitting of dislocations in germanium' Phys.Stat.Sol.(a), 130, 193 (1992)
  2. L.A.Klinkova, N.V.Barkovskii, D.U.Batova, A.I.Kolyubakin, S.A.Shevchenko 'On the character of barrium cuprates conductivity' Superconductivity: physics, chemistry, technics, 5, 1262 (1992)

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1991

  1. M.P.Kulakov, N.N.Kolesnikov, Yu.A.Ossipyan, S.A.Shevchenko 'Hall effect in single crystals Tl2Ba2CaCu2Ox' Superconductivity: Physics, chemistry, technics, 4, 957 (1991)

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