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Laboratory of spectroscopy of defect structures ISSP RAS

Shalynin Alexander Ivanovich

E-mail: shalynin@issp.ac.ru

phone: 2-19-84
2-82-02
2-83-01

Working in:118 ГЛК

Position:senior scientist

Work in LSDS since: 1984-11-01

Scientific degree:PhD

Shalynin Alexander Ivanovich

Selected publications

2001

  1. R.A.Dilanyan, S.S.Khasanov, S.I.Bredikhin, A.F.Gurov, V.V.Kveder, Yu.A.Osip'yan, and A.I.Shalynin 'Phase Transitions and the Structure of the C60 Crystal Doped with Lithium by Electrodiffusion' JETP, 93, 1239 (2001)

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2000

  1. S.Bredikhin, V.Kveder, A.Shalynin, R.Nikolaev Yu.Ossipyan 'Peculiarity of lithium electrodiffusion into fullerides single crustals.' Journal of Ionics, 6, N 5-6, p.187-195 (2000)

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1999

  1. A.V. Bazhenov, S.I. Bredikhin, V.V. Kveder, Yu.A. Ossipyan, R.K. Nikolaev, T.N. Fursova, A.I.Shalynin 'Electronic properties of C60 single crystals doped with lithium by electrodiffusion' JETP, 89(5), 923-932 (1999)

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1998

  1. A.V.Bazhenov, V.V.Kveder, A.A.Maksimov, I.I.Tartakovskii, R.A.Oganyan, Yu.A.Ossipyan, A.I.Shalynin 'Raman scattering of light and IR absorption in carbon nanotubes' JETP, 86(5), 1030-1034 (1998)

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1997

  1. V.V.Kveder, A.I.Shalynin, E.A.Steinman, A.N.Izotov 'The Effect of Dislocation on the g-Tenzor of Holes in Dislocation Related 1D Energy Band in Si' Solid State Phenomena, 57-58, 299-304 (1997)

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1996

  1. V.V.Kveder, A.I.Shalynin, E.A.Shteinman, and A.N.Izotov 'Influence of the splitting of dislocations on the g factor of holes in one-dimensional dislocation band' JETP, 83 (4), 829 (1996)

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1995

  1. N.T.Bagraev, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, L.E.Klyachkin, A.M.Malyarenko, A.I.Shalynin 'Strong charge correlations in p+ quantum wells on the surface of n-type silicon' Phys.Solid.State, 37(10), 1655-1658 (1995)
  2. N.T.Bagraev, L.E.Klyachkin, A.M.Malyarenko, E.I.Chaikina, E.V.Vladimirskaya, V.E.Gasumyants, V.I.Kaidanov, V.V.Kveder, A.I.Shalynin 'Metal-insulator transition in strongly doped p+ quantum wells on a n-type silicon surface' Semiconductors, 29(12), 1112-1124 (1995)

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1991

  1. V.V. Kveder, M.R. Mkrtchan, A.I. Shalynin 'Problem of microwave absorption in a high-temperature superconducting ceramic in a magnetic field' Solid State Physics (Russian), 33(4),1226-1237 (1991)

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1990

  1. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin 'Investigation of one-dimensional defects in Si using the EDSR' in Defect Control in Semicond., K.Sumino (ed.), Elsevier Sci.Publ. B.V. (North-Holland), p.1417-1422 (1990)
  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin 'Relationship between a combined resonance in plastically deformed n-type silicon with a dislocation structure' Solid State Physics (Russian), 32(8), 2224-2229 (1990)

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1989

  1. V.V.Kveder, A.E.Koshelev, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin 'Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects' Sov.Phys.JETP, 68(1), 104-108 (1989)
  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin 'Conductivity along dislocations: temperature dependence and nonlinear effects. Combined resonance and structure peculiarities of plastically deformed silicon' Solid State Phenom, 6-7, 301-308 (1989)

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1987

  1. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin 'Characteristics of microwave losses in a super-conducting ceramic subjected to a magnetic field' JETP Lett.(Russian), 46(Suppl.), 176-179 (1987)
  2. V.V.Kveder, T.R.Mchedlidze, Yu.A.Osipian, A.I.Shalynin 'Combined electron resonance in a one-dimensional dislocation band' JETP (Russian), 93(4), 1470-1479 (1987)

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1986

  1. A.V.Bazhenov, V.V.Kveder, L.L.Krasilnikova, A.I.Shalynin 'Light absorption due to deep dislocation states in silicon' Solid State Physics (Russian), 28(1), 230-234 (1986)
  2. V.V.Kveder, V.Ya.Kravchenko, T.R.Mchedlidze, Yu.A.Osipian, D.E.Khmelnizkii, A.I.Shalynin 'Combined resonance at dislocations in silicon' JETP Lett. (Russian), 43(4), 202-205 (1986)

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1985

  1. V.V.Kveder, Yu.A.Osipian, I.R.Sagdeev, A.I.Shalynin, M.N.Zolotukhin 'The effect of annealing and hydrogenation on the dislocation conduction in silicon' Phys. Stat.Sol.(a), 87, 657-665 (1985)
  2. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin 'Spin-dependent change in the RF photo conductivity of silicon crystals containing dislocations' JETP (Russian), 88(1), 309-317 (1985)

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1984

  1. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin 'The exodiffusion of hydrogen in dislocated crystalline silicon' Phys.Stat. Sol.(a), 84, 149-156 (1984)

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1982

  1. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin 'Spin-dependent recombination on dislocation dangling bonds in silicon' JETP (Russian), 83(2), 699-714 (1982)
  2. V.V.Kveder, Yu.A.Osipian, A.I.Shalynin 'Investigation of spin-dependent recombination at dislocations in silicon' Fiz. & Tekh. Poluprovodn., 16(8), 1459-1461 (1982)

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