Khorosheva Mariya Anatolevna
E-mail: khor@issp.ac.ru phone: 2-82-02 Working in:218 ГЛК Position:junior scientist Work in LSDS since: 2006-07-03 |
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Selected publications
2016
- V. Kveder, М. Khorosheva, M. Seibt 'Interplay of Ni and Au atoms with dislocations and vacancy defects generated by moving dislocations in Si' Solid State Phenomena, Vol. 242 pp 147-154 (2016)
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2015
- M.A. Khorosheva, V.V. Kveder, M. Seibt 'On the nature of defects produced by motion of dislocations in silicon' Phys. Status Solidi, A 212, No. 8, 1695-1703 (2015)
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2012
- S. Beringov, A. Shkulkov, Yu. Cherpak, M. Vlasiuk, T. Vlasenko, I. Buchovska, V. Kveder, M. Khorosheva 'Multicrystalline silicon production for solar cells applications by continuous induction melting in cold crucible' Phys. Status Solidi C, 10 ?1, 2012 стр.24-27 (2012)
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2010
- М.А.Хорошева, В.И.Орлов, Н.В.Абросимов, В.В.Кведер 'Определение неравновесной концентрации вакансий в кристаллах кремния по измерению концентрации атомов никеля в узлах решетки' ЖЭТФ, 137(5), 879-885 (2010)
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