Документ взят из кэша поисковой машины. Адрес оригинального документа : http://www.issp.ac.ru/avtoreferat/fokin.pdf Дата изменения: Tue Apr 6 16:02:59 2010 Дата индексирования: Tue Oct 2 00:22:06 2012 Кодировка: IBM-866 Поисковые слова: m 103

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, , ( , , , - , ..) . . Pb / (/). : 1. () / , in-situ, 2. Si(111) , 3. Pb Si(111) , , , 4. - Pb Si(111) . , 1. Si(557). , . 2. Si(111) Si(557). , Pb Si(111) 4


, , , , , (). Si(557) , " ". Pb(111) 1 Si(111). 3. / Pb , ef f , : , . . § Si(557) § , Pb Si(557) § / Pb Si(111) . . Si(557) , , : (557), (223), (7 7 10) (111), . 5


Pb Si(557) . , , . Pb d 3ef f ef f . , : , . , , . , "". . , , : 1. Dubost V., Fokin D., Cren T., Debontridder F., Sacks W., Bozhko S. and Roditchev D. "Growth and Control of Pb н Nanoislands on Si by STM". HighMatTech-2007, 15-19 2007., , . 2. .., .., .., .., .. " - Si(hhm) , ". VI , , (-2007), 12-17 2007 ., , . 3. .. , .. , .. , .. , F. Debontridder, V. Dubost, T. Cren, D. Roditchev. " Si(hhm) 7 Ѕ 7". " " (LDS-2008), 5-9 2008 ., . , .

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4. T. Cren, F. Debontridder, D. Fokin, V. Dubost and D. Roditchev. "New STM Facility in Paris: Ultra-low Temperature, High Magnetic Fields, Ultra-high Vacuum STM/STS with in-situ Growth and Surface Characterization". Cryoconference 2008, 8-13 2009, Miraflores de la Sierra (), . 5. D.A.Fokin, A.N.Chaika, S.I.Bozhko, A.M.Ionov, F.Debontridder, V.Dubost, T.Cren, D.Roditchev. "Atomic structure of the regular step arrays on clean Si(557) surfaces: STM, LEED and photoemission studies". 26th European Conference on Surface Science (ECOSS-26), 30.08.2009 04.09.2009, , 6. D.A.Fokin, S.I.Bozhko, V.Dubost, F.Debontridder, A.M.Ionov, T.Cren, D.Roditchev. "Electronic growth of 3-dimensional Pb islands on the Si(557) surface". 26th European Conference on Surface Science (ECOSS-26), 30.08.2009 04.09.2009, , . 7. T.Cren, D.Fokin, F.Debontridder, V.Dubost and D.Roditchev, "Ultimate Vortex Confinement Studied by Scanning Tunneling Spectroscopy", GDR 2426, Physique Quantique Mesoscopique, 5-8 2009, Aussois, 8. T.Cren, D.Fokin, F.Debontridder, V.Dubost and D.Roditchev, "Ultimate Vortex Confinement Studied by Scanning Tunneling Spectroscopy", I.F. Schegolev Memorial Conference "LowDimensional Metallic and Superconducting Systems" 11н16 , 2009, , . 1.-5. (. ) . , , , 133 , 68 . 103 .

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, , , , , , . . , Si(111) , , . " ". , , -, . . Pb/Si. Pb Si(111) -. Pb (4,95ђ Si (5,43ђ A) A). , , 3 () [1н4]. , [5], Si(111) (), , 1-3 Pb 95K . , 4 . , 8


, [1н3, 6н11]. Si(111) [2, 4, 12н15]. , , (130-250K ). , , . , , (Electronic Growth ) () [9, 10]. , , , . , . Pb [11] , 7 . , , Pb Si(111), , . , , . . , , , . , , , [4]. , , [16]. , , , , . , , 9


, , . , . : , . . 80- . , , [17н19], " `" (). 1986 , . , . , , , , - . , -, . , . , "3", INSP (CNRS, Universit‡ Pierre e ` Omicron et Marie Curie) Nanotechnolgy ICE Oxford. 10


LAS-3000 RIBER, RT STM GPI-300 ( ) . / - Si(557). Si(111)-7 Ѕ 7 (). Si(557) n-, (2 Ѕ 1014 -3 , 25Ѕ 300 ). (111) [пп 9.45 . 112] . 600 C , . . , , 1 Ѕ 10-9 . 2-3 , , 1200 C, "" 5 Ѕ 10-10 . , 900 C 100-200 C/, 1 , (20-40 C/). 900 C 1 Ѕ 1 7 Ѕ 7. . . . 1 100 Ѕ 45 2 , , , , , 4,8 . , 11


. 1: Si(223) V = -2, 1 B, I = 80 A

20 . , 7 Ѕ 7 , . , Si(111) . (. 1b) , (111). (). , Si(111) Si 7 Ѕ 7. , Si(111) 11,3 . , , . 1 (223). ,

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(111) 9,45 , , Si(557) Si(111), 7 Ѕ 7 Si(223). , , Si(111) 15% . , . (113). , , (112), , . , , , [20, 21], , , , -, , , , , .. Pb Si(111) Si(557), . Pb Si Si(557). 3, . (223), (7 7 10) (557). , Pb 13


(7 7 10).

. 2: a: Si(7 7 10) Pb, b: , c-f: .a b . 2 Si(7 7 10), 16 . , , , . , . , Pb -. ,

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Pb . [9, 10], , , . Pb [11]. : C sin(2kF N a + ) +B (1) N C B - , , N , 1, 77 ‘ 0, 09 [11]. Es =

. 3: .3 . E 15


EF . EF = 0. E (d), , E Pb. , 7 , . , Pb, , , . 7 . , Pb . - Pb . , Pb/Si . c d 110 5.5 , 19 Pb. , , , , h P b , P b . , , . , (I (x, y , V ), z (x, y )) , , 16


. 4: dI /dV (V ) , () (b).

. . 4 dI /dV (V ), , , . 4b . , , 240 , - . dI /dV (V ) , - ZBC , , . , , , ef f . , 2 . ,

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, . 240 . dI/dV , , . , 240 , . , . , , , 460 . , , . , : § , / (P<10-10), ( 0,28) ( 8) in-situ. § Si(557) , , Si(111)-7 Ѕ 7, Si(223), Si(7 7 10), Si(557). . § , Pb Si(557) . 7 (2), Pb(111) 1 Si(111).

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§ Pb d 3ef f ef f . , : , . , : , . , . . , . , . , . , , 4 , , .


1. T.Cren, D.Fokin, F.Debontridder, V.Dubost and D.Roditchev "Ultimate Vortex Confinement Studied by Scanning Tunneling Spectroscopy", Phys.Rev.Lett. 102 (2009) 127005 2. A.N.Chaika, D.A.Fokin, S.I.Bozhko, A.M.Ionov, F.Debontridder, V.Dubost, T.Cren, and D.Roditchev "Regular stepped structures on clean Si(hhm) 7 Ѕ 7 surfaces", Journal of applied Physics, 105 (2009) 034304

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3. A.N.Chaika, D.A.Fokin, S.I.Bozhko, A.M.Ionov, F.Debontridder, T.Cren, D.Roditchev "Atomic structure of a regular Si(223) triple step staircase", Surface Science 603 (2009) 752-761 4. .., .., .., .., F.Debontridder, V.Dubost, T.Cren, D.Roditchev " Si(hhm)7 Ѕ 7", . , 73 (2009) 716-718 5. D.A.Fokin, S.I.Bozhko, V.Dubost, F.Debontridder, A.M.Ionov, T.Cren, D.Roditchev "Electronic Growth of Pb on the Vicinal Si Surface" Phys.Rev.B, submitted


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