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Дата изменения: Mon Aug 14 01:11:00 2006
Дата индексирования: Mon Oct 1 23:21:58 2012
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Поисковые слова: arp 220

- GaAs

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. . (, - [1]) , , - . (-, -) [2,3] , . , . , -, ( 20 ) , . , . - . GaAs - (Al/S i GaAs) : ( ) , Al - , . , (persistent), () , , n- GaAs AlGaAs . , [2]. : DX-, EL2-, 3

, , . , . , , , . Al/ -GaAs -. . , -, -, . , ( ) DX -. (2D) - , . . [4] Al/ -GaAs, (); ; ; -; , GaAs,
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. , DX- , -. Al/ -GaAs LO-. , . · , Al/ -GaAs . · . · Tc = 45 ± 3 . · -. · LO- . , . , , . . , . , , - , , 5

. , ( 0.1% ), . , , , , , . , , . . : II (.-, 2000); (. , 2001); International Symposium Nanostructures: Physics and Technology (St. Petersburg, Russia, 2001 2006); (. , 2001, .-, 2003, , 2005); 3rd International Conference 'Physics of low-dimensional structures 3' (Chernogolovka, Moscow District, Russia, 2001); International Conference on the Physics of Semiconductors (Edinburg, Scotland, UK, 2002, Vienna, Austria, 2006); 15th International Conference on High Magnetic Fields in Semiconductor Physics (Oxford, UK, 2002); 2nd Asian Conference on High Pressure Research (Nara, Japan, 2004); 16th International Conference on Electronic Properties of Two-dimensional Systems (Albuquerque, New Mexico, 2005); " " (, . 2005, 2006); VIII - " "(, 2004); (2003 2005). . 30 , 5 1 , 7 15 6

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, . , . 4.2 Al/ -GaAs . : "" 2D (). : Al/GaAs, . U = 0 S Al/GaAs exp(-2(S + EF )/E00 ), E00 , (t) S . , 2D - GaAs. , Na GaAs -. Ei (Na ), . 77 , (, DX-) -. . 4.3 . ,
14

-, - , , GaAs, h > Eg . , - - . "" - 2D-. , GaAs, . , " ", GaAs, - . , , h > Eg GaAs, , -, "" ( ) 2D-. , " " , - , "" - GaAs. h < Eg - - , , . , , 2D-. h < Eg , , h > Eg , . : ) p- ( , )
15

) GaAs ( ). . 4.4 , DX - . DX- - , NS i < 5 в 1012 -2 . , DX- - . , NDX , , . , EDX = EC + 170 , EDX DX-, EC , NDX 1010 -2 . DX- Ei 1 T = 77 K > Tc . 5 . 5.1 , . 5.2 . Al/ -GaAs, . , - . LO-
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17

LO- . , , - inter . , E1F . . E1 (E1 - E0 > LO ) , , LO- kz , E0 . , intra , , . () LO-, . , : = = (intra + inter )/0 . |inter | intra , , . , , , LO- . [6] 3D , - , . . , 1. Al/ GaAs - . 18

: - . , 10 . . . 50 , 2 . . . 5 . 2. . , () h 2 1.3 . , CO2 h 0.13 Eg -. 3. . Tc = 45 ± 3 , . T > Tc "" . 4. , - GaAs -. 5. , (h > Eg ) GaAs: ) ) / . h

- GaAs. , .

: 1. .. , .. . 2D - . . . 2629 2001 . . . 236-239 2. .. , .. . - GaAs. . . 26-29 2001 . . . 159-162 3. I.N. Kotel'nikov, S.E. Dizhur. Persistent 2D states of -layer quantum well and resonant polaron in -GaAs/Al structures. Proceedings of 9th International Symposium Nanostructures: Physics and Technology, St. Petersburg, Russia, June 17-22, 2001, c.286-289. 4. .. , .. , .. , .. . 2D- - GaAs. V . 2001, , 10-14 . . .2 . 308. 5. S.E.Dizhur, I.N.Kotel'nikov, V.A.Kokin, and F.V.Shtrom 2D-subband spectra variations under persistent tunnelling photoconductivity condition in tunnel delta-GaAs/Al structures PLDS Vols. 11/12 (2001) pp.233 244, 6. I.N. Kotel'nikov, S.E. Dizhur, F.V. Shtrom Many-body lines in tunneling spectra of Al/ -GaAs junctions near resonant polaron threshold. Pro20

ceedings of 10th International Symposium Nanostructures: Physics and Technology, St. Petersburg, Russia, June 17-21, 2002, c.323-326. 7. E. M. Dizhur, A. N. Voronovsky, I. N. Kotelnikov, S. E. Dizhur, and M. N. Feiginov Experimental study of pressure influence on tunnel transport into 2DEG. Phys. Stat. Sol. (b) 235, No2, pp. 531-535 (2003), WILEYVCH Verlag GmbH & Co. KGaA, Weinheim. 8. I. N. Kotel'nikov, E. M. Dizhur, A. N. Voronovsky, S. E. Dizhur, V. A. Kokin and M. N. Feiginov Tunneling spectroscopy near-surface deltalayer in GaAs at high pressure Proceedings of the 11th International Symposium "Nanostructures: Physics and Technology", St. Petersburg, Russia, June, 23-28, 2003, pp. 117-118, Ioffe Institute, St. Petersburg, 2003. 9. .. , . . , . . , . . , GaAs - 6- , .-, - . .. , 27-31 2003 ., . 347-348 10. . . , .. , .. , .., . . "" GaAs 6- , .-, - . .. , 27-31 2003 ., . 510-511. 11. I.N. Kotel'nikov, S.E. Dizhur Polaron singularities in tunnelling spectra of high density 2D electron system in delta-layer Proceedings of 12th International Symposium Nanostructures: Physics and Technology, St. Petersburg, Russia, June, 21-25, 2004, pp. 366-367. Ioffe Institute, St.Petersburg, 2004

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12. .., .., .., .., .. - Al/ (Si)GaAs , . 80, .6, . 489-492 (2004). 13. . . , . . LO- - .81, . 9, . 574-577 (2005) 14. I. N. Kotel'nikov, S. E. Dizhur, N. A. Mordovets Decrease of tunnelling conductance near LO-phonon emission threshold in Al/delta-GaAs junctions Proceedings of 13th International Symposium Nanostructures: Physics and Technology, St. Petersburg, Russia, June 20-25, 2005, pp.171-172. 15. .., .. Al/delta- GaAs VII "2005", 18-23 2005 . (, "") . , . .. , 2005, II-15 .215 16. .., .., .. Al/d-GaAs VII "-2005", 18-23 2005 . (, "") . , . .. , 2005, II-16 .216 17. .. , .. , .. , .. Al/delta-GaAs .40 .7, . 839-845, 2006 18. .. , .. , .. 22

- GaAs , .51, .5, .625-632, 2006

1. . - / ., ., . .. // . : , 1989. 584 . 2. .. - / ..// . 1992. . 26, 7. . 1161. 3. Schubert E.F., Delta Doping of Semiconductors / Schubert E.F. // Cambridge : Cambridge University Press, 1996. 616 . 4. Wolf E.L., Principles of Electron Tunneling Spectroscopy / Wolf E.L. // Oxford : Oxford Univ. Press, 1985. 576 . 5. .., Al/delta-GaAs / .., .., .., .., .. // . 2000. . 71, 9. . 564569 6. Appelbaum J.A., Interface Effects in Normal Metal Tunneling / Appelbaum J.A., Brinkman W.F.// Phys. Rev. B. 2. 1970. . 2 4. . 907-915

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