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Abstract Submitted to the The International Conference on Magnetism - ICM 2009 in Karlsruhe, Germany July 26-31, 2009

Manganite-based magnetic tunnel junctions on grain b oundary of [100]-tilt typ e: magnetoresistance and transp ort prop erties
Borisenko I.V., Ovsyannikov G.A.
Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia. e-mail: iboris@hitech.cplire.ru

The aim of this work was to study transport and magnetoresistive properties of manganite based magnetic junctions on [100]-tilt bicrystal substrate. Thin film of La0.7 C a0.3 M nO3 (TC urie =250K) were deposited by pulsed laser deposition technique on N dGaO3 [100]-tilt bicrystal substrates with misalignment of [001] axis on ±11 or ±14 in plane perpendicular to bicrystal boundary. R(T ) of the bicrystal boundary resembles the dependences of the film but with much lower TC urie . Voltage dependencies of differential conductance of the bicrystal boundary were measured at several temperatures and in magnetic fields up to 200 mT. (V ) has sharp dip at zero voltage but rapidly increases and saturates at voltages around 150 mV to the value that corresponds to the conductance of the film without grain boundary. Magnetoresistance of about 150% at zero voltage and in magnetic field perpendicular to the film was obtained at T =4.2 K (I.V. Borisenko et al. Phys. Sol. St. 51, 309 (2009)).
This work was supported by programs of the Presidium and the Department of Physical Sciences of the Russian Academy of Sciences, a grant of the President of the Russian Federation (pro ject no. NSh- 5408.2008.2), a program of the European Union (pro ject NMP3-CT-2006-033191), and the International Scientific and Technical Center (pro ject 3743).