Äîêóìåíò âçÿò èç êýøà ïîèñêîâîé ìàøèíû. Àäðåñ îðèãèíàëüíîãî äîêóìåíòà : http://www.cplire.ru/html/lab185/Kholodnov.html
Äàòà èçìåíåíèÿ: Mon Mar 21 06:14:32 2016
Äàòà èíäåêñèðîâàíèÿ: Sun Apr 10 04:33:40 2016
Êîäèðîâêà: Mac-cyrillic
Ïîèñêîâûå ñëîâà: scientist
Kholodnov Viacheslav Aleksandrovich. E-mail: vkholodnov@mail.ru
List of some publications
1. Kholodnov V. A. Contribution to Hall-Schockley-Read theory of recombination //
Semiconductors, vol. 30, issue 6, pp. 538-544, 1996.
2. Kholodnov V. A. Avalanche multiplication coefficients of carriers in p-n structures //
Semiconductors, vol. 30, issue 6, pp.558-563, June 1996.
3. Kholodnov V. A. Giant burst of photoconductivity in semiconductors upon an in-crease
in the concentration of recombination centers // Letters to Journal of Experimental and
Theoretical Physics, vol. 67, issue 9, pp. 685-691, 1998.
4. Kurochkin N.E., Kholodnov V. A. ïÀŠPhenomenological model of the anomalous
behavior of the avalanche noise factor in metal-insulator-semiconductor structuresïÀŠ // Technical
Physics Letters, vol. 25 , issue 5, pp. 369-371, 1999.
5. Kholodnov V. A., Drugova A.A. ïÀŠOn the possibility of suppressing the saturation of
photoelectric amplification of weak optical emission in semiconductors by forming near-contact
variband layersïÀŠ // Technical Physics Letters, vol. 27 , issue 6, pp. 504-507, 2001.
6. Kholodnov V. A., ïÀŠDescription of the geiger mode in avalanche p-i-n photodiodes by
elementary functionsïÀŠ // Technical Physics Letters , vol. 35, issue 8, pp. 744-748, 2009.
7. Kholodnov V. A., ïÀŠOn the degree of blocking of the surface recombination of
photogenerated carriers in semiconductors by the subsurface variband layerïÀŠ // Technical
Physics Letters , vol. 36, issue 10, pp. 929-932, 2010.
8. Nikitin M., Drugova A., Kholodnov V., Chekanova G. ïÀŠSimulation of Small-pitch
High-density Photovoltaic Infrared Focal Plane ArraysïÀŠ. In book âÀ™Advances in PhotodiodesâÀ™,
edited by Gian-Franco Dalla Betta, part 1, chapter 5, p. 95-120, Austria-Croatia-India-USA,
InTech, March, 2011, (www.intechopen.com).
9. Kholodnov V.A., Nikitin M.S. Physical design fundamentals of high performance
ava-lanche heterophotodiodes with separate absorption and multiplication regions// in book
âÀ™Photodiodes - From Fundamentals to ApplicationsâÀ™, edited by Ilgu Yun, section 1
âÀ™Funda-mental Physics and Physical DesignâÀ™, chapter 2, p. 27 - 101, InTech, Rijeka-
Shanghai-New York, December 2012, (www.intechopen.com).
10. Kholodnov V.A. On the theory of the photoelectric effect in surface-graded-gap
semi-conductors , Semiconductors, vol. 41, issue 1, pp. 929-932, 2013.
11. Kholodnov V.A. ïÀŠAbout particular effect of indirect-gap degree in semiconductor on
threshold energy of band-to-band impact generation of electron-hole pairs at two-particle
collisionsïÀŠ// International conference ïÀŠSensor engineering and electronic instrument advancesïÀŠ,
21-22 November 2015, Dubai, UAE, Extended abstracts.
12 Kholodnov V.A., Nikitin M.S., Burlakov I. D. Analytical Principles of Physical Design
of Avalanche Heterophotodiodes Based on Direct-Band SemiconductorsïÀŠ// International
conference ïÀŠSensor engineering and electronic instrument advancesïÀŠ, 21-22 November 2015,
Dubai, UAE, Extended abstracts.
13. Kholodnov V.A. and Nikitin M. S. The theory of giant splash of photoresponse in
semiconductors at low-level illumination with increasing concentration of deep recombination
impurity // in ïÀŠOptoelectronics - Materials and DevecesïÀŠ, Edited by S. L. Pyshkin and
J. Ballato, Rijeka: InTech, pp. 301-348, 2015, (www.intechopen.com).
14. Kholodnov V. A., Nikitin M. S., Burlakov I. D. ïÀŠAnalytical method for calculating
performance of avalanche heterophotodiode with separate absorption and multiplication regions
based on âÀÜlow-high-lowâÀÝ type heterostructureïÀŠ. The First International Conference on Advances
in Sensors, Actuators, Metering and Sensing ALLSENSORS 2016, April 24 - 28, 2016 - Venice,
Italy, Proceedings of the conference.
15. Kholodnov V. A., Burlakov I. D. and Drugova A.ïÀŠAnalytical approuch to selection of
the optimum structure of avalanche heterophotodiodes based on direct gap semiconductorsïÀŠ //
Journal of Communication Technology and Electronics, vol. 61, issue 3, pp. 338-343, 2016.
16. Kholodnov V. A. ïÀŠAbout giant splash of photoelectric response in semiconductors with
increasing concentration of recombination centers. Case of non-uniform illumination along
directon of electric fieldïÀŠ . The First International Conference on Advances in Sensors, Actuators,
Metering and Sensing ALLSENSORS 2016, April 24 - 28, 2016 - Venice, Italy, Proceedings of
the conference.