Документ взят из кэша поисковой машины. Адрес оригинального документа : http://phys.msu.ru/rus/research/conferences/science-festival-2006/timoshenko.pdf Дата изменения: Fri Aug 1 03:09:10 2008 Дата индексирования: Mon Oct 1 22:16:33 2012 Кодировка: Поисковые слова: m 81

. .
. ..



I. : , II. III. IV. - V. VI.


I.
1. 1959 . " - " (There is plenty of rooms at the bottom. In minituarization). . , .

2. ? , ( , , , .) 10-20 . , , , .



­ «», 10-9 -. ­ , , . , .. -; ­ ­ , , . .


...
80- . : 1985 . ­ ; 1986 . ­ ; 1998 . ­ ; 2000 . ­ .


...

« , »
Ralph Merkle (Xerox, Palo Alto)


II.
1. XXI . , , ­ , . 80- , , 1 . 130 11 2 100 . . .. ( 1.5 ) 2010 . 50 . , . , - .

2.


III. o
1. 2. , (Si). , , . ( ). , A3B5 (GaAs, GaP ..)?

3.


!
1.5 µm eV 1.88 1.55 1.26 0.81 0 0.66 0.80 0.98 1.53 h 0 µm (Si) ­

Er3+ ion

, ,



4. , . , 108 , 20 . , . - . : ) P (d-5). ) , , . Er3+, 1.5 .

5.



6. (1.5 ). , ( ) Er3+.



3nm

Preparation Details:
1. Alternating evaporation of SiO powder in vacuum 10-7 mbar or in oxygen atmosphere under oxygen partial pressure of 10-4 mbar. This changes the stoichiometry x of SiO alternatively between 1 and 2.

Er

x

2.

SiO/SiO2 superlatticies are characterized by the thickness of the SiO layers varied between 1 and 3 nm and the thickness of SiO2 layers between 2 and 3 nm. The number of periods varied between 30 and 90. The evaporated samples were annealed at 1100 oC under N2 atmosphere. Thus nc-Si/ SiO2 superlattices were obtained. Er doped nc-Si/SiO2 superlattices were produced by implantation with Er ions (energy 300 keV, doses 1014 ­ 5·1016 cm-2) followed by RTA at 950 oC for 5-65 minutes.

3.

4.


Si
()

(. .)

1.2 1.1 1

0.9

0.8

0.7

0.6

n=3

d = 6 ... 2 nm

n=2 n=1

c-Si
d
E 1 d
k

, 1 k 2

1.0

1.2

1.4

1.6

1.8

2.0

2.2

h PL = E g 0 + E - Eexc

()
Si () .



(..)
1.0 0.8 0.6 0.4 0.2 0.0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 ()

d=3.5

nc-Si:Er

nc-Si

SiO

2

E, eV 1.88 1.55 1.26 0.81

nc-Si

Er3+

0

Si Er , 1.5

N

1

N

0


?
, ­ . , , . , 120 , . , , , , .
, , . "National Geographic"


, Si

5 mm

200 nm

2 nm


Si 2
(. .)
1 1



1



1 1







nc-Si in vacuum

3

nc-Si +10 bar O

-5

2


X5
T= 5 K

0 1.0 1.2 1.4 1.6 1.8 2.0

()



Si nanocrystals dispersed in water

Exciton PL Intensity (arb. units)

1

hex=3.7 eV hPL=1.63 eV

T=300 K

0.1

without O PL=90 µs O2 saturated PL=40 µs 0 50 100 150

2

1 mg of Si nanocrystals dispersed in 3 ml of water

0.01

200

250

300

Time (µs)




h nc-Si
Si Si Si Si Si Si Si Si Si Si Si Si



3

2

nc-Si

1 2

Si Si Si



nc-Si



1. . 2. , , , . 3. 1.5 . 4. - . 5. .


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