ИСТИНА

Bychkova L.P.

Соавторы: Енукашвили М.И., Даварашвили О.И., Ахвледиани З.Г., Пашаев А.М., Зломанов В.П., Гуляев Р.Г., Dzagania M.A.

4 статьи, 1 тезисы доклада

IstinaResearcherID (IRID): 5800434

Деятельность стиль:  обычный | ГОСТ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

• Статьи в журналах

  • • 2015 Analysis of the absorption spectra of epitaxial lead telluride and lead selenide layers
    • Pashaev A.M., Davarashvili O.I., Enukashvili M.I., Akhvlediani Z.G., Bychkova L.P., Dzagania M.A., Zlomanov V.P.
    • в журнале International Journal of Engineering and Innovative Technology (IJEIT), том 4, ? 11, с. 193-198
  • • 2014 Stretching strain - effective "negative" pressure in Lead selenide nanolayers
    • Pashaev A.M., Davarashvili O.I., Enukashvili M.I., Akhvlediani Z.G., Bychkova L.P., Gulyaev R.G., Zlomanov V.P.
    • в журнале International Journal of Engineering and Innovative Technology (IJEIT), том 3, ? 11, с. 318-323
  • • 2013 Modeling of the Quasi-Dielectric State in PbSnTe and PbSnSe Nanolayers with High Concentration of Nonstoichiometric Defects
    • Pashaev A.M., Davarashvili O.I., Enukashvili M.I., Akhvlediani Z.G., Gulyaev R.G., Bychkova L.P., Zlomanov V.P.
    • в журнале Nano Studies, ? 8, с. 253-258
  • • 2013 Modification of the Properties of Lead Selenide Layers at Their Nanothickness
    • Pashaev A.M., Davarashvili O.I., Enukashvili M.I., Akhvlediani Z.G., Gulyaev R.G., Bychkova L.P., Zlomanov V.P.
    • в журнале Nano Studies, ? 7, с. 233-240

• Тезисы докладов

  • • 2013 Modeling of the dielectric state in PbSnSe and PbSnTe nanolayers with high concentration of nonstoichiometric defects
    • Pashaev A.M., Davarashvili O.I., Enukashvili M.I., Akhvlediani Z.G., Bychkova L.P., Zlomanov V.P.
    • в сборнике Book of Abstracts of the 17th International Conference on Radiation Effects in Insulators, место издания Helsinki, тезисы, с. PB-16-PB-16