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ZnO
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, 140700, , Lotin_82@mail.ru The rod structures and a single crystal film of ZnO were grown on the silicon (100) and sapphire (00.1) substrates by pulsed laser deposition. The cross section sizes of ZnO rods grown at 4000 and 5000 are 50-270 nm and 150-400 nm, respectively, as the scan electron measurements indicated. The low temperature photoluminescence spectra of ZnO rod structures excited by the pulsed-periodical excimer laser (248 nm) and continuous He-Cd laser (325 nm) have been investigated. It has been established that the rod structures of ZnO possess nonlinear optical amplification, which manifests itself in the nonlinear dependence of photoluminescence intensity versus optical excitation power.

( , ) [1]. , GaN, SiC, ZnSe ., [2]. 3,37 , (60 ), , [3]. , , , - . , . - ( ) [4]. ZnO (, , ) [5,6]. ZnO (100) ZnO (00.1) - . (10-7 ) 4000 5000. [7]. , 10-7 .


LC-7020 10 (=248 , =15 ). 2 /2. ZnO Si-, ZnO:Ga (Ga-2%) ~50 . (~67,1%), -. , , c, .. . , , , ZnO [3]. (). .1 - ZnO, Si (100) 4000 (a) 5000 (b). , ZnO Si- 4000 150-600 , 5000 50 270 . ~400 ~750 . .2. - ZnO, ZnO:Ga/Si (100) 4000 (a) 5000 (b). ZnO (.2). ZnO ~700 .

.1. - ZnO, (100) 4000 (a) 5000 (b).


.2. - ZnO, ZnO:Ga/Si- 4000 (a) 5000 (b).

ZnO (). He-Cd 23 (=325 ) - KrF-. .3 (8 ) ZnO ZnO:Ga/Si 4000 , . He-Cd (.3) 3,357 BX (1). D0X 3,217 , (2). . 1. (.3b) 1 0,135 0,34 /c2. 5 , ZnO. , 3 (3,178 ) . 3,002 (4) VZn. 2,449 , ZnO . , ZnO VO OZn [3,8].


.3. ZnO ZnO:Ga/Si 4000: a ­ He-Cd (0В92 /2) b ­ - KrF- (0,135В1,01 /2), ­ ZnO, KrF-.

1 ZnO , - (.4a). . I1, (.4b).


.4. ZnO ZnO:Ga/Si 4000 He-Cd (a) KrF- (b). - 1 ZnO .

ZnO Si- ZnO. , . , . - . 3294, . 02.513.11.3169, ZnO 09-08-00291.
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